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IXFB82N60Q3

IXFB82N60Q3 Littelfuse Inc.


Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 82A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+84.24 EUR
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Technische Details IXFB82N60Q3 Littelfuse Inc.

Description: MOSFET N-CH 600V 82A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V.

Weitere Produktangebote IXFB82N60Q3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXFB82N60Q3 IXFB82N60Q3 IXYS IXFB82N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhancement
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of package: tube
Reverse recovery time: 300ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IXFB82N60Q3 IXFB82N60Q3.pdf
IXFB82N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhancement
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of package: tube
Reverse recovery time: 300ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH