IXFB82N60Q3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 43.21 EUR |
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Technische Details IXFB82N60Q3 IXYS
Description: MOSFET N-CH 600V 82A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V.
Weitere Produktangebote IXFB82N60Q3 nach Preis ab 43.21 EUR bis 67.95 EUR
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IXFB82N60Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns Drain-source voltage: 600V Drain current: 82A Case: PLUS264™ Polarisation: unipolar On-state resistance: 75mΩ Power dissipation: 1.56kW Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 275nC Reverse recovery time: 300ns Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB82N60Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 600V 82A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB82N60Q3 | Hersteller : Littelfuse |
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IXFB82N60Q3 | Hersteller : IXYS |
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