auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 32.54 EUR |
| 10+ | 32.52 EUR |
| 30+ | 32.21 EUR |
Produktrezensionen
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Technische Details IXTX120N65X2 IXYS
Description: MOSFET N-CH 650V 120A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote IXTX120N65X2 nach Preis ab 23.04 EUR bis 32.68 EUR
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IXTX120N65X2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 650V 120A PLUS247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTX120N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 120A 3-Pin(3+Tab) PLUS 247 |
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IXTX120N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 120A 3-Pin(3+Tab) PLUS 247 |
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IXTX120N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 505ns Features of semiconductor devices: ultra junction x-class Gate charge: 230nC Anzahl je Verpackung: 1 Stücke |
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IXTX120N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 505ns Features of semiconductor devices: ultra junction x-class Gate charge: 230nC |
Produkt ist nicht verfügbar |