Technische Details IXFA34N65X2 Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 34A, Power dissipation: 540W, Case: TO263, On-state resistance: 0.1Ω, Mounting: SMD, Gate charge: 56nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 164ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXFA34N65X2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
IXFA34N65X2 | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IXFA34N65X2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
![]() |
IXFA34N65X2 | Hersteller : IXYS |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IXFA34N65X2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns |
Produkt ist nicht verfügbar |