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Technische Details IXFA34N65X2 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 34A, Power dissipation: 540W, Case: TO263, On-state resistance: 0.1Ω, Mounting: SMD, Gate charge: 56nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 164ns, Features of semiconductor devices: ultra junction x-class.
Weitere Produktangebote IXFA34N65X2
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IXFA34N65X2 | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 164ns Features of semiconductor devices: ultra junction x-class |
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