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IXTP80N10T IXTP80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
auf Bestellung 103 Stücke:
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20+3.62 EUR
24+2.99 EUR
50+2.65 EUR
100+2.49 EUR
Mindestbestellmenge: 20
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IXTP80N12T2 IXTP80N12T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D401DBA5BEB820&compId=IXTA(P)80N12T2.pdf?ci_sign=7682108f228cee2f7d0194b2935bc173520213f0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
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MCC95-12io1B MCC95-12io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D643D3E361E27&compId=MCC95-12IO1B-DTE.pdf?ci_sign=6ef7395d58c6e9da07782e34c2dd9ac98d6396b3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 13 Stücke:
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2+41.74 EUR
3+39.04 EUR
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IXTK20N150 IXTK20N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD34BF01127820&compId=IXTK(X)20N150.pdf?ci_sign=5b2aa8b5101db2e0624fd882f4176f4c1fee0d13 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
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IXTX20N150 IXTX20N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD34BF01127820&compId=IXTK(X)20N150.pdf?ci_sign=5b2aa8b5101db2e0624fd882f4176f4c1fee0d13 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
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IXFK220N15P IXFK220N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F951AAE15F820&compId=IXFK220N15P.pdf?ci_sign=7aa1b38f019148fe6172bcbeab14c2e612cec2f5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 162nC
On-state resistance: 9mΩ
Drain current: 220A
Power dissipation: 1.25kW
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
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IXTQ120N15P IXTQ120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9104F5DBF83E27&compId=IXTQ120N15P-DTE.pdf?ci_sign=115a007e8969db60c979e5e18ac41392c35041f5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Case: TO3P
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 150nC
Reverse recovery time: 150ns
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFH160N15T2 IXFH160N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0E5820&compId=IXFH160N15T2.pdf?ci_sign=467d005fecee5b2cd75a7e20897d1283fa7c3985 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
auf Bestellung 285 Stücke:
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8+9.22 EUR
30+7.49 EUR
Mindestbestellmenge: 8
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IXFK360N15T2 IXFK360N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CF77E51B2D8BF&compId=IXFK(X)360N15T2.pdf?ci_sign=eeafce7d74467a0ac752f9932d45deda43271681 Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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IXFN360N15T2 IXFN360N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF63E7A0DAD7820&compId=IXFN360N15T2.pdf?ci_sign=4def48316f0abdbe91810c197e50af3682680042 Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 310A
Power dissipation: 1.07kW
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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IXFX360N15T2 IXFX360N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CF77E51B2D8BF&compId=IXFK(X)360N15T2.pdf?ci_sign=eeafce7d74467a0ac752f9932d45deda43271681 Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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MMIX1H60N150V1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF049A4BE1158BF&compId=MMIX1H60N150V1.pdf?ci_sign=2ae92bab7b597b60581a48f40ba8030aeacc3a55 Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
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MMIX1F360N15T2 IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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IXTA4N70X2 IXTA4N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
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25+2.89 EUR
28+2.6 EUR
32+2.29 EUR
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CPC1025N CPC1025N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE99590D7B70D13F8BF&compId=CPC1025N.pdf?ci_sign=58ef7bdb3f98bcd2cb1abd98798d3d35a65e7c48 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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1+71.5 EUR
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DSEI2x61-06P DSEI2x61-06P IXYS Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Max. off-state voltage: 0.6kV
Load current: 60A x2
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Case: ECO-PAC 1
Mechanical mounting: screw
Max. load current: 60A
Type of semiconductor module: diode
Semiconductor structure: double independent
auf Bestellung 22 Stücke:
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3+23.97 EUR
10+21.69 EUR
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VBE17-12NO7 VBE17-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB9C24370CE0C4&compId=VBE17-12NO7.pdf?ci_sign=8abd66786a2e835a6f88b60ebfccc01acc8b56cc Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 19A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 19A
Max. forward impulse current: 35A
Electrical mounting: THT
Version: module
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 25 Stücke:
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4+20.78 EUR
10+17.1 EUR
25+14.87 EUR
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VBE26-12NO7 VBE26-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8780D7329C2D40C4&compId=VBE26-12NO7.pdf?ci_sign=7cf9369ddc2ee331fe38db0bf5b3fc5f0b9d17cd Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 75A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
auf Bestellung 20 Stücke:
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4+19.82 EUR
10+16.27 EUR
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VUE75-06NO7 VUE75-06NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5E538A61F78BF&compId=VUE75-06NO7.pdf?ci_sign=faeeb5a6350ebe5e4d302eff285b72fcef02e44b Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 86A; Ifsm: 215A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 86A
Max. forward impulse current: 215A
Electrical mounting: THT
Version: module
Max. forward voltage: 1.57V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 25 Stücke:
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3+25.64 EUR
10+21.18 EUR
25+18.22 EUR
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VBO54-08NO7 VBO54-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF1C1688D4E0C4&compId=VBO54-08NO7.pdf?ci_sign=30ed4c4a96dbfe1746d7927a1199caa7d11d08f5 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 25 Stücke:
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5+15.67 EUR
10+14.31 EUR
Mindestbestellmenge: 5
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VBO68-08NO7 VBO68-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF718E1BA2A0C4&compId=VBO68-08NO7.pdf?ci_sign=00e4c65078afe95102e48ee8a7e5077c70d927a0 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 70A; Ifsm: 550A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.21 EUR
10+16.62 EUR
25+14.31 EUR
Mindestbestellmenge: 4
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VBO54-16NO7 VBO54-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF25AA44FB60C4&compId=VBO54-16NO7.pdf?ci_sign=7f734f131e6f9d9a207efe1716b6539285ad3357 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 23 Stücke:
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4+19.68 EUR
5+17.16 EUR
10+15.56 EUR
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VBO54-12NO7 VBO54-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF22F893DF80C4&compId=VBO54-12NO7.pdf?ci_sign=ceb0320cebf4a7f1e2c0fe086d97c09f3a4727d1 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 14 Stücke:
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5+15.44 EUR
10+13.96 EUR
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VUE75-12NO7 VUE75-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8895E059C37940C4&compId=VUE75-12NO7.pdf?ci_sign=47361efb1879fbe2a2ebc066258b9d6c06eb1e94 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 20 Stücke:
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3+26.53 EUR
10+23.35 EUR
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VUO68-12NO7 VUO68-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88805DBBE44460C4&compId=VUO68-12NO7.pdf?ci_sign=c0ee51601989ccf2ba8cc6ae72008a4ac26044f3 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 14 Stücke:
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4+19.06 EUR
5+16.14 EUR
10+15.06 EUR
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VUO68-08NO7 VUO68-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880567A6C9360C4&compId=VUO68-08NO7.pdf?ci_sign=97346785b5a2efc0318b61237cc151198a909cdb Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 70A; Ifsm: 300A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 13 Stücke:
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4+19.06 EUR
10+15.06 EUR
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CLA16E1200PN CLA16E1200PN IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3C75C4A8580D2&compId=CLA16E1200PN.pdf?ci_sign=8a652795e55291d724389f9222e6367e0e1a96fa Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 10A
Case: TO220FP
Mounting: THT
Max. load current: 16A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
auf Bestellung 113 Stücke:
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18+4.03 EUR
33+2.22 EUR
50+2.03 EUR
100+1.96 EUR
Mindestbestellmenge: 18
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CS45-16IO1R CS45-16IO1R IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFB71DF8D21820&compId=CS45-16io1R.pdf?ci_sign=efdda7ec6c6e9a406aed03cc4f534b63b8ad9084 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.62 EUR
10+7.62 EUR
11+6.78 EUR
30+6.64 EUR
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CS45-16IO1 CS45-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 pVersion=0046&contRep=ZT&docId=E1C0492FBC2D6FF1A6F5005056AB5A8F&compId=CS45-16IO1.pdf?ci_sign=50880bc4b954e45707319554f5d24fd02df256ec description Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Produkt ist nicht verfügbar
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IXTP140N055T2 IXTP140N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1323820&compId=IXTP140N055T2.pdf?ci_sign=4fde222e64865f76b52f5a21b6005238850dbe91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTT440N055T2 IXTT440N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTH440N055T2 IXTH440N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DSB60C30PB DSB60C30PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA0D6D80B458BF&compId=DSB60C30PB.pdf?ci_sign=0a17ebb4b5d6fad1a724db90a897b139c6c3369e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
45+1.6 EUR
51+1.42 EUR
57+1.27 EUR
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DSB60C45PB DSB60C45PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA7395DEAFF8BF&compId=DSB60C45PB.pdf?ci_sign=1ff325bc90927c6040ff341798c54a4ccf48d453 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSB60C30HB DSB60C30HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA08444F62B8BF&compId=DSB60C30HB.pdf?ci_sign=4867e853e054ab2d49791b486e9606de233af8cf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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DSB60C60PB DSB60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA8FDA8EAAB8BF&compId=DSB60C60PB.pdf?ci_sign=e35bd84c9be13dc65ec03afa6d1fddeb9130d9e2 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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CS60-14io1 CS60-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFBDEEAA993820&compId=CS60-14io1.pdf?ci_sign=3a3d20fdce3befdf541fff29fba3c8fe507427f9 Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS247™
Type of thyristor: thyristor
Gate current: 200mA
Max. forward impulse current: 1.4A
Load current: 60A
Max. load current: 75A
Max. off-state voltage: 1.4kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.79 EUR
10+16.86 EUR
30+16.27 EUR
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IXTH110N25T IXTH110N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917DB820&compId=IXTH110N25T.pdf?ci_sign=70bf22a6c770d2e1a644817b2000fd043bc19e40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
Reverse recovery time: 170ns
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.8 EUR
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IXFH110N15T2 IXFH110N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.55 EUR
11+6.68 EUR
Mindestbestellmenge: 10
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IXTP110N055T2 IXTP110N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
24+3.07 EUR
30+2.42 EUR
50+2.06 EUR
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IXFA110N15T2 IXFA110N15T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.45 EUR
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IXFH110N25T IXFH110N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC04B820&compId=IXFH110N25T.pdf?ci_sign=865e81011edebf9d86100c2413f31800becab293 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
auf Bestellung 256 Stücke:
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7+11.63 EUR
10+9.58 EUR
30+7.79 EUR
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VUB120-16NOX VUB120-16NOX IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B3548F568880D8&compId=VUB120-16NOX.pdf?ci_sign=4b3165f8cc8537c2e4339967fc5c96bd0db594db Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Topology: buck chopper; three-phase diode bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Power dissipation: 500W
Case: V2-Pack
Application: Inverter
Semiconductor structure: diode/transistor
auf Bestellung 1 Stücke:
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1+100.26 EUR
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LBB120 LBB120 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFBE0C7&compId=LBB120.pdf?ci_sign=2a9fa0a2877987881c061e5edd3959c08de9e40d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.01 EUR
13+5.69 EUR
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LCB120S LCB120S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD865A0C7&compId=LCB120.pdf?ci_sign=27accf77bd4dab2be2154ac1ae4e7fe950ad8f63 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.23 EUR
23+3.15 EUR
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LBB120S LBB120S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFBE0C7&compId=LBB120.pdf?ci_sign=2a9fa0a2877987881c061e5edd3959c08de9e40d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.41 EUR
50+8.55 EUR
Mindestbestellmenge: 7
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IXTY3N50P IXTY3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 9.3nC
Reverse recovery time: 400ns
Technology: Polar™
auf Bestellung 34 Stücke:
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34+2.1 EUR
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FDM47-06KC5
+1
 		FDM47-06KC5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F363DA39EA5820&compId=FDM47-06KC5.pdf?ci_sign=01c8a9463d526f84120914de2773f068278b2c9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: buck chopper
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.65 EUR
10+10.27 EUR
Mindestbestellmenge: 7
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IXTA80N10T IXTA80N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXTP180N10T IXTP180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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PM1204 PM1204 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.48 EUR
12+6.21 EUR
50+5.18 EUR
100+4.98 EUR
Mindestbestellmenge: 9
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PM1205 PM1205 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.99 EUR
15+5.02 EUR
100+4.89 EUR
Mindestbestellmenge: 12
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PM1205S PM1205S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Produkt ist nicht verfügbar
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PM1205STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Produkt ist nicht verfügbar
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IXGT24N170 IXGT24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Mounting: SMD
Case: TO268
Turn-on time: 105ns
Gate charge: 106nC
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Produkt ist nicht verfügbar
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IXGT24N170A IXGT24N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3FCFE5B71820&compId=IXGH(T)24N170A.pdf?ci_sign=d7f55190fb1ae41de43c5d2e465d23d3a7cfcd72 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Mounting: SMD
Case: TO268
Turn-on time: 54ns
Gate charge: 0.14µC
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Produkt ist nicht verfügbar
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IXFN130N90SK IXFN130N90SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Case: SOT227B
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Drain current: 109A
Drain-source voltage: 900V
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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MCNA120UI2200TED IXYS MCNA120UI2200TED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Power dissipation: 190W
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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DCG160X650NA DCG160X650NA IXYS littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd Category: Diode modules
Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 80A x2
Case: SOT227B
Max. forward voltage: 1.35V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
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IXBF20N300 IXBF20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+73.87 EUR
3+67.57 EUR
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IXTP80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTP80N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
24+2.99 EUR
50+2.65 EUR
100+2.49 EUR
Mindestbestellmenge: 20
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IXTP80N12T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D401DBA5BEB820&compId=IXTA(P)80N12T2.pdf?ci_sign=7682108f228cee2f7d0194b2935bc173520213f0
IXTP80N12T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
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MCC95-12io1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D643D3E361E27&compId=MCC95-12IO1B-DTE.pdf?ci_sign=6ef7395d58c6e9da07782e34c2dd9ac98d6396b3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC95-12io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+41.74 EUR
3+39.04 EUR
Mindestbestellmenge: 2
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IXTK20N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD34BF01127820&compId=IXTK(X)20N150.pdf?ci_sign=5b2aa8b5101db2e0624fd882f4176f4c1fee0d13
IXTK20N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTX20N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD34BF01127820&compId=IXTK(X)20N150.pdf?ci_sign=5b2aa8b5101db2e0624fd882f4176f4c1fee0d13
IXTX20N150
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK220N15P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F951AAE15F820&compId=IXFK220N15P.pdf?ci_sign=7aa1b38f019148fe6172bcbeab14c2e612cec2f5
IXFK220N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 162nC
On-state resistance: 9mΩ
Drain current: 220A
Power dissipation: 1.25kW
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTQ120N15P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9104F5DBF83E27&compId=IXTQ120N15P-DTE.pdf?ci_sign=115a007e8969db60c979e5e18ac41392c35041f5
IXTQ120N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Case: TO3P
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 150nC
Reverse recovery time: 150ns
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Produkt ist nicht verfügbar
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IXFH160N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0E5820&compId=IXFH160N15T2.pdf?ci_sign=467d005fecee5b2cd75a7e20897d1283fa7c3985
IXFH160N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.22 EUR
30+7.49 EUR
Mindestbestellmenge: 8
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IXFK360N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CF77E51B2D8BF&compId=IXFK(X)360N15T2.pdf?ci_sign=eeafce7d74467a0ac752f9932d45deda43271681
IXFK360N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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IXFN360N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF63E7A0DAD7820&compId=IXFN360N15T2.pdf?ci_sign=4def48316f0abdbe91810c197e50af3682680042
IXFN360N15T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 310A
Power dissipation: 1.07kW
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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IXFX360N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CF77E51B2D8BF&compId=IXFK(X)360N15T2.pdf?ci_sign=eeafce7d74467a0ac752f9932d45deda43271681
IXFX360N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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MMIX1H60N150V1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF049A4BE1158BF&compId=MMIX1H60N150V1.pdf?ci_sign=2ae92bab7b597b60581a48f40ba8030aeacc3a55
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Produkt ist nicht verfügbar
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MMIX1F360N15T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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IXTA4N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_4n70x2_datasheet.pdf.pdf
IXTA4N70X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.6 EUR
32+2.29 EUR
Mindestbestellmenge: 25
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CPC1025N pVersion=0046&contRep=ZT&docId=005056AB82531EE99590D7B70D13F8BF&compId=CPC1025N.pdf?ci_sign=58ef7bdb3f98bcd2cb1abd98798d3d35a65e7c48
CPC1025N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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DSEI2x61-06P
DSEI2x61-06P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Max. off-state voltage: 0.6kV
Load current: 60A x2
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Case: ECO-PAC 1
Mechanical mounting: screw
Max. load current: 60A
Type of semiconductor module: diode
Semiconductor structure: double independent
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.97 EUR
10+21.69 EUR
Mindestbestellmenge: 3
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VBE17-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB9C24370CE0C4&compId=VBE17-12NO7.pdf?ci_sign=8abd66786a2e835a6f88b60ebfccc01acc8b56cc
VBE17-12NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 19A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 19A
Max. forward impulse current: 35A
Electrical mounting: THT
Version: module
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.78 EUR
10+17.1 EUR
25+14.87 EUR
Mindestbestellmenge: 4
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VBE26-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8780D7329C2D40C4&compId=VBE26-12NO7.pdf?ci_sign=7cf9369ddc2ee331fe38db0bf5b3fc5f0b9d17cd
VBE26-12NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 75A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.82 EUR
10+16.27 EUR
Mindestbestellmenge: 4
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VUE75-06NO7 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F5E538A61F78BF&compId=VUE75-06NO7.pdf?ci_sign=faeeb5a6350ebe5e4d302eff285b72fcef02e44b
VUE75-06NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 86A; Ifsm: 215A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 86A
Max. forward impulse current: 215A
Electrical mounting: THT
Version: module
Max. forward voltage: 1.57V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.64 EUR
10+21.18 EUR
25+18.22 EUR
Mindestbestellmenge: 3
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VBO54-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF1C1688D4E0C4&compId=VBO54-08NO7.pdf?ci_sign=30ed4c4a96dbfe1746d7927a1199caa7d11d08f5
VBO54-08NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.67 EUR
10+14.31 EUR
Mindestbestellmenge: 5
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VBO68-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF718E1BA2A0C4&compId=VBO68-08NO7.pdf?ci_sign=00e4c65078afe95102e48ee8a7e5077c70d927a0
VBO68-08NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 70A; Ifsm: 550A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.21 EUR
10+16.62 EUR
25+14.31 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VBO54-16NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF25AA44FB60C4&compId=VBO54-16NO7.pdf?ci_sign=7f734f131e6f9d9a207efe1716b6539285ad3357
VBO54-16NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.68 EUR
5+17.16 EUR
10+15.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VBO54-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FF22F893DF80C4&compId=VBO54-12NO7.pdf?ci_sign=ceb0320cebf4a7f1e2c0fe086d97c09f3a4727d1
VBO54-12NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.44 EUR
10+13.96 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VUE75-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8895E059C37940C4&compId=VUE75-12NO7.pdf?ci_sign=47361efb1879fbe2a2ebc066258b9d6c06eb1e94
VUE75-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.53 EUR
10+23.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
VUO68-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88805DBBE44460C4&compId=VUO68-12NO7.pdf?ci_sign=c0ee51601989ccf2ba8cc6ae72008a4ac26044f3
VUO68-12NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.06 EUR
5+16.14 EUR
10+15.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
VUO68-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880567A6C9360C4&compId=VUO68-08NO7.pdf?ci_sign=97346785b5a2efc0318b61237cc151198a909cdb
VUO68-08NO7
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 70A; Ifsm: 300A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.06 EUR
10+15.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
CLA16E1200PN pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB0C3C75C4A8580D2&compId=CLA16E1200PN.pdf?ci_sign=8a652795e55291d724389f9222e6367e0e1a96fa
CLA16E1200PN
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 10A
Case: TO220FP
Mounting: THT
Max. load current: 16A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
33+2.22 EUR
50+2.03 EUR
100+1.96 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
CS45-16IO1R pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFB71DF8D21820&compId=CS45-16io1R.pdf?ci_sign=efdda7ec6c6e9a406aed03cc4f534b63b8ad9084
CS45-16IO1R
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.62 EUR
10+7.62 EUR
11+6.78 EUR
30+6.64 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
CS45-16IO1 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 pVersion=0046&contRep=ZT&docId=E1C0492FBC2D6FF1A6F5005056AB5A8F&compId=CS45-16IO1.pdf?ci_sign=50880bc4b954e45707319554f5d24fd02df256ec
CS45-16IO1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP140N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1323820&compId=IXTP140N055T2.pdf?ci_sign=4fde222e64865f76b52f5a21b6005238850dbe91
IXTP140N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTT440N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808
IXTT440N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH440N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5661D46317820&compId=IXTH(T)440N055T2.pdf?ci_sign=5f4942b500a3c0ddae739b2aec9961823a876808
IXTH440N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSB60C30PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA0D6D80B458BF&compId=DSB60C30PB.pdf?ci_sign=0a17ebb4b5d6fad1a724db90a897b139c6c3369e
DSB60C30PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
45+1.6 EUR
51+1.42 EUR
57+1.27 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
DSB60C45PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA7395DEAFF8BF&compId=DSB60C45PB.pdf?ci_sign=1ff325bc90927c6040ff341798c54a4ccf48d453
DSB60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSB60C30HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA08444F62B8BF&compId=DSB60C30HB.pdf?ci_sign=4867e853e054ab2d49791b486e9606de233af8cf
DSB60C30HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSB60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA8FDA8EAAB8BF&compId=DSB60C60PB.pdf?ci_sign=e35bd84c9be13dc65ec03afa6d1fddeb9130d9e2
DSB60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CS60-14io1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EFBDEEAA993820&compId=CS60-14io1.pdf?ci_sign=3a3d20fdce3befdf541fff29fba3c8fe507427f9
CS60-14io1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS247™
Type of thyristor: thyristor
Gate current: 200mA
Max. forward impulse current: 1.4A
Load current: 60A
Max. load current: 75A
Max. off-state voltage: 1.4kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.79 EUR
10+16.86 EUR
30+16.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXTH110N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917DB820&compId=IXTH110N25T.pdf?ci_sign=70bf22a6c770d2e1a644817b2000fd043bc19e40
IXTH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
Reverse recovery time: 170ns
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.8 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH110N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78
IXFH110N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.55 EUR
11+6.68 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXTP110N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A327B8DD935820&compId=IXTA(P)110N055T2.pdf?ci_sign=95ba3ca6ece76e436480df8f9f361f529bc19588
IXTP110N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
24+3.07 EUR
30+2.42 EUR
50+2.06 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IXFA110N15T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3
IXFA110N15T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.45 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFH110N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC04B820&compId=IXFH110N25T.pdf?ci_sign=865e81011edebf9d86100c2413f31800becab293
IXFH110N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.63 EUR
10+9.58 EUR
30+7.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
VUB120-16NOX pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B3548F568880D8&compId=VUB120-16NOX.pdf?ci_sign=4b3165f8cc8537c2e4339967fc5c96bd0db594db
VUB120-16NOX
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Topology: buck chopper; three-phase diode bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Power dissipation: 500W
Case: V2-Pack
Application: Inverter
Semiconductor structure: diode/transistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+100.26 EUR
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LBB120 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFBE0C7&compId=LBB120.pdf?ci_sign=2a9fa0a2877987881c061e5edd3959c08de9e40d
LBB120
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.01 EUR
13+5.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
LCB120S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD865A0C7&compId=LCB120.pdf?ci_sign=27accf77bd4dab2be2154ac1ae4e7fe950ad8f63
LCB120S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
23+3.15 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
LBB120S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FEFBE0C7&compId=LBB120.pdf?ci_sign=2a9fa0a2877987881c061e5edd3959c08de9e40d
LBB120S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.41 EUR
50+8.55 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTY3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTY3N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 9.3nC
Reverse recovery time: 400ns
Technology: Polar™
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
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FDM47-06KC5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F363DA39EA5820&compId=FDM47-06KC5.pdf?ci_sign=01c8a9463d526f84120914de2773f068278b2c9b
FDM47-06KC5
+1
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: buck chopper
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.65 EUR
10+10.27 EUR
Mindestbestellmenge: 7
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IXTA80N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D406B88E9F9820&compId=IXTA(P)80N10T.pdf?ci_sign=bc8f5f5b020fd346b1d379e0314e69667636f1ab
IXTA80N10T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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IXTP180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTP180N10T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Produkt ist nicht verfügbar
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PM1204 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2E80C7&compId=PM1204.pdf?ci_sign=fe7c8ce608d80997c5fe6a85d8dc00b0c1445e99
PM1204
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.48 EUR
12+6.21 EUR
50+5.18 EUR
100+4.98 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PM1205 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
PM1205
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.99 EUR
15+5.02 EUR
100+4.89 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
PM1205S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
PM1205S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM1205STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B495B30F2FE0C7&compId=PM1205.pdf?ci_sign=36d83da0e4b0f642b1f8632f8d1accecf8685c22
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGT24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901
IXGT24N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Mounting: SMD
Case: TO268
Turn-on time: 105ns
Gate charge: 106nC
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 150A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Produkt ist nicht verfügbar
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IXGT24N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3FCFE5B71820&compId=IXGH(T)24N170A.pdf?ci_sign=d7f55190fb1ae41de43c5d2e465d23d3a7cfcd72
IXGT24N170A
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Mounting: SMD
Case: TO268
Turn-on time: 54ns
Gate charge: 0.14µC
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Produkt ist nicht verfügbar
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IXFN130N90SK
IXFN130N90SK
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Case: SOT227B
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Drain current: 109A
Drain-source voltage: 900V
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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MCNA120UI2200TED MCNA120UI2200TED.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Power dissipation: 190W
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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DCG160X650NA littelfuse-power-semiconductors-dcg160x650na-datasheet?assetguid=f824683d-3931-4c15-8f16-a2e12c193acd
DCG160X650NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 80A x2
Case: SOT227B
Max. forward voltage: 1.35V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
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IXBF20N300 littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf
IXBF20N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+73.87 EUR
3+67.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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