| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CMA30E1600PB | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor: standard; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB Gate current: 28/50mA Max. off-state voltage: 1.6kV Load current: 30A Max. load current: 47A Kind of package: tube Case: TO220AB Type of thyristor: standard Mounting: THT Max. forward impulse current: 220A |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCMA50P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V Gate current: 78/200mA Max. forward voltage: 1.48V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 50A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH10N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 5A Power dissipation: 140W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 29nC Kind of package: tube Turn-on time: 107ns Turn-off time: 240ns Features of semiconductor devices: high voltage |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MCMA110P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| MCMA110P1800TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 110A; Ifmax: 170A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.21V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| MCMA110P1600VA | IXYS |
Category: Thyristor modules Description: Module: thyristor; 1.6kV; 110A; V1-A-Pack; Ufmax: 1.5V; Ifsm: 1.9kA Type of semiconductor module: thyristor Max. off-state voltage: 1.6kV Load current: 110A Case: V1-A-Pack Max. forward voltage: 1.5V Max. forward impulse current: 1.9kA Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCMA110PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.21V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Kind of package: bulk Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.85V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| UGE0421AY4 | IXYS |
Category: Diodes - others Description: Diode: rectifying; 3.2kV; 7.4/14.2/19.7A; 40A; 7kW; Ø55x23mm; bulk Mounting: screw type Kind of package: bulk Fastening thread: M8 Max. forward impulse current: 0.3kA Max. forward voltage: 2.72V Power dissipation: 7kW Features of semiconductor devices: high voltage Max. off-state voltage: 3.2kV Body dimensions: Ø55x23mm Load current: 7.4/14.2/19.7A Max. load current: 40A Semiconductor structure: single diode Type of diode: rectifying |
Produkt ist nicht verfügbar |
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MDD26-12N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V Max. forward impulse current: 555A Max. forward voltage: 1.05V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 36A Max. load current: 60A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH1N200P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO247HV On-state resistance: 40Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
Produkt ist nicht verfügbar |
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IXTH1N200P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 1A Power dissipation: 125W Case: TO247-3 On-state resistance: 40Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.3µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFX210N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMIX1F210N30P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Power dissipation: 520W Case: SMPD Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 268nC Kind of channel: enhancement Reverse recovery time: 250ns Pulsed drain current: 550A |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK210N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFB210N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: THT Gate charge: 268nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
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IXFT220N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268 Case: TO268 Mounting: SMD Power dissipation: 960W Gate charge: 204nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 220A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube On-state resistance: 6.2mΩ Reverse recovery time: 116ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFB132N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFL132N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Power dissipation: 520W Case: ISOPLUS264™ On-state resistance: 43mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IXDN609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPG20C300PN | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; Ifsm: 140A; TO220FP; tube; 35W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 140A Case: TO220FP Kind of package: tube Max. forward voltage: 1.27V Power dissipation: 35W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 551 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSB20C60PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 0.24kA Case: TO220FP Kind of package: tube Max. forward voltage: 0.62V Power dissipation: 30W |
auf Bestellung 399 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DHG20C600QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 80A; TO3P; tube; 70W; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 80A Case: TO3P Kind of package: tube Max. forward voltage: 2.17V Power dissipation: 70W Reverse recovery time: 35ns Technology: Sonic FRD™ |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSA20C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220-3; Ufmax: 860mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: common cathode Case: TO220-3 Kind of package: tube Max. forward voltage: 0.86V Capacitance: 194pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 32000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DPF120C600HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 100A; Ifsm: 500A; TO247-3; tube; 40ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Max. forward impulse current: 0.5kA Case: TO247-3 Kind of package: tube Max. forward voltage: 1.9V Reverse recovery time: 40ns Technology: FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CPC1390GR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC Mounting: SMT Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.57x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 5kV Turn-on time: 1ms Switched voltage: max. 400V AC; max. 400V DC Case: DIP4 Max. operating current: 140mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 22Ω |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH16P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -600V Drain current: -16A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 720mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 440ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXGH60N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 54ns Turn-off time: 198ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH2N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 2A Power dissipation: 32W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 13.5A Mounting: THT Gate charge: 10.5nC Kind of package: tube Turn-on time: 115ns Turn-off time: 278ns Features of semiconductor devices: high voltage |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH32N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH24N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-on time: 105ns Turn-off time: 560ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXGH25N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 25A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 301ns Turn-off time: 409ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH12N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH32N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH6N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 6A Power dissipation: 75W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: THT Gate charge: 20nC Kind of package: tube Turn-on time: 85ns Turn-off time: 0.6µs Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH6N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 6A Power dissipation: 75W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 14A Mounting: THT Gate charge: 18.5nC Kind of package: tube Turn-on time: 91ns Turn-off time: 271ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGH90N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247 Type of transistor: IGBT Technology: GenX3™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 660W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 172nC Kind of package: tube Turn-on time: 29ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXGH120N30B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 300V Collector current: 120A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 51ns Turn-off time: 356ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH120N30C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 300V Collector current: 120A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 66ns Turn-off time: 233ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH24N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH24N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT; Sonic FRD™ Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH24N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 54ns Turn-off time: 456ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH28N60B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3 Type of transistor: IGBT Technology: PolarHV™; PT Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 62nC Kind of package: tube Turn-on time: 45ns Turn-off time: 350ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DLA100B800LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 124A Max. forward impulse current: 0.4kA Case: SMPD-B Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.44V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DLA100B800LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 124A Max. forward impulse current: 0.4kA Case: SMPD-B Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.44V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PLA140L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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PLA140LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PLA140LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXKH70N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70A Power dissipation: 625W Case: TO247-3 On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXKT70N60C5 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 540W Case: TO268 On-state resistance: 45mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Features of semiconductor devices: super junction coolmos |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXKT70N60C5-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 66A; D3PAK,TO268 Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 66A Case: D3PAK; TO268 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Gate charge: 150nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXKT70N60C5-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 68A; D3PAK,TO268 Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 68A Case: D3PAK; TO268 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Gate charge: 150nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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DSI2X55-12A | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 60A x2 Case: SOT227B Max. forward voltage: 1.22V Max. forward impulse current: 0.8kA Electrical mounting: screw Max. load current: 120A Mechanical mounting: screw Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTQ130N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO3P; automotive industry Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO3P Gate-source voltage: 20V On-state resistance: 9.1mΩ Mounting: THT Kind of channel: enhancement Gate charge: 104nC Application: automotive industry Reverse recovery time: 67ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IXFA130N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263AB; 67ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: D2PAK; TO263AB Gate-source voltage: 20V On-state resistance: 9.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 104nC Application: automotive industry Reverse recovery time: 67ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFA130N10T2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: D2PAK; TO263 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Gate charge: 130nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFP130N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO220-3; 67ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220-3 Gate-source voltage: 20V On-state resistance: 9.1mΩ Mounting: THT Kind of channel: enhancement Gate charge: 104nC Application: automotive industry Reverse recovery time: 67ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTH130N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO247-3; 67ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO247-3 Gate-source voltage: 20V On-state resistance: 9.1mΩ Mounting: THT Kind of channel: enhancement Gate charge: 104nC Application: automotive industry Reverse recovery time: 67ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MCC44-16io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Max. forward voltage: 1.34V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 49A Kind of package: bulk Semiconductor structure: double series Case: TO240AA |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC3714CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89 Polarisation: unipolar Drain current: 0.24A Kind of channel: depletion Drain-source voltage: 350V Type of transistor: N-MOSFET Gate-source voltage: ±15V Kind of package: reel; tape Case: SOT89 On-state resistance: 14Ω Mounting: SMD Power dissipation: 1.4W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR180N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Reverse recovery time: 200ns Gate charge: 240nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CMA30E1600PB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 30A
Max. load current: 47A
Kind of package: tube
Case: TO220AB
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 220A
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 30A
Max. load current: 47A
Kind of package: tube
Case: TO220AB
Type of thyristor: standard
Mounting: THT
Max. forward impulse current: 220A
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
| MCMA50P1200TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Gate current: 78/200mA
Max. forward voltage: 1.48V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Gate current: 78/200mA
Max. forward voltage: 1.48V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGH10N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 5A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 240ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 5A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 240ns
Features of semiconductor devices: high voltage
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
| MCMA110P1600TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCMA110P1800TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCMA110P1600VA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; 1.6kV; 110A; V1-A-Pack; Ufmax: 1.5V; Ifsm: 1.9kA
Type of semiconductor module: thyristor
Max. off-state voltage: 1.6kV
Load current: 110A
Case: V1-A-Pack
Max. forward voltage: 1.5V
Max. forward impulse current: 1.9kA
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; 1.6kV; 110A; V1-A-Pack; Ufmax: 1.5V; Ifsm: 1.9kA
Type of semiconductor module: thyristor
Max. off-state voltage: 1.6kV
Load current: 110A
Case: V1-A-Pack
Max. forward voltage: 1.5V
Max. forward impulse current: 1.9kA
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MCMA110PD1600TB |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UGE0421AY4 |
|
Hersteller: IXYS
Category: Diodes - others
Description: Diode: rectifying; 3.2kV; 7.4/14.2/19.7A; 40A; 7kW; Ø55x23mm; bulk
Mounting: screw type
Kind of package: bulk
Fastening thread: M8
Max. forward impulse current: 0.3kA
Max. forward voltage: 2.72V
Power dissipation: 7kW
Features of semiconductor devices: high voltage
Max. off-state voltage: 3.2kV
Body dimensions: Ø55x23mm
Load current: 7.4/14.2/19.7A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: rectifying
Category: Diodes - others
Description: Diode: rectifying; 3.2kV; 7.4/14.2/19.7A; 40A; 7kW; Ø55x23mm; bulk
Mounting: screw type
Kind of package: bulk
Fastening thread: M8
Max. forward impulse current: 0.3kA
Max. forward voltage: 2.72V
Power dissipation: 7kW
Features of semiconductor devices: high voltage
Max. off-state voltage: 3.2kV
Body dimensions: Ø55x23mm
Load current: 7.4/14.2/19.7A
Max. load current: 40A
Semiconductor structure: single diode
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDD26-12N1B |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Max. forward impulse current: 555A
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 36A
Max. load current: 60A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Max. forward impulse current: 555A
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 36A
Max. load current: 60A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH1N200P3HV |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH1N200P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFX210N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| MMIX1F210N30P3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 550A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 550A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK210N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFB210N30P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT220N20X3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Power dissipation: 960W
Gate charge: 204nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 220A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 6.2mΩ
Reverse recovery time: 116ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Power dissipation: 960W
Gate charge: 204nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 220A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 6.2mΩ
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFB132N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFL132N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IXDN609PI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
| DPG20C300PN |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; Ifsm: 140A; TO220FP; tube; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 140A
Case: TO220FP
Kind of package: tube
Max. forward voltage: 1.27V
Power dissipation: 35W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; Ifsm: 140A; TO220FP; tube; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 140A
Case: TO220FP
Kind of package: tube
Max. forward voltage: 1.27V
Power dissipation: 35W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 551 Stücke:
Lieferzeit 14-21 Tag (e)
| DSB20C60PN |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.24kA
Case: TO220FP
Kind of package: tube
Max. forward voltage: 0.62V
Power dissipation: 30W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.24kA
Case: TO220FP
Kind of package: tube
Max. forward voltage: 0.62V
Power dissipation: 30W
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
| DHG20C600QB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 80A; TO3P; tube; 70W; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 80A
Case: TO3P
Kind of package: tube
Max. forward voltage: 2.17V
Power dissipation: 70W
Reverse recovery time: 35ns
Technology: Sonic FRD™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 80A; TO3P; tube; 70W; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 80A
Case: TO3P
Kind of package: tube
Max. forward voltage: 2.17V
Power dissipation: 70W
Reverse recovery time: 35ns
Technology: Sonic FRD™
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| DSA20C60PB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220-3; Ufmax: 860mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode
Case: TO220-3
Kind of package: tube
Max. forward voltage: 0.86V
Capacitance: 194pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220-3; Ufmax: 860mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: common cathode
Case: TO220-3
Kind of package: tube
Max. forward voltage: 0.86V
Capacitance: 194pF
Produkt ist nicht verfügbar
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| DPF120C600HB |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; Ifsm: 500A; TO247-3; tube; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Max. forward impulse current: 0.5kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.9V
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; Ifsm: 500A; TO247-3; tube; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Max. forward impulse current: 0.5kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.9V
Reverse recovery time: 40ns
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| CPC1390GR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.57x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 5kV
Turn-on time: 1ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP4
Max. operating current: 140mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 22Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.57x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 5kV
Turn-on time: 1ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP4
Max. operating current: 140mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 22Ω
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH16P60P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 440ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 440ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXGH60N60C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Produkt ist nicht verfügbar
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| IXGH2N250 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGH32N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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| IXGH24N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXGH25N250 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH12N120A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH32N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH6N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXGH6N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH90N60B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXGH120N30B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXGH120N30C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
Produkt ist nicht verfügbar
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| IXGH24N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
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| IXGH24N120C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
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| IXGH24N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
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| IXGH28N60B3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
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| DLA100B800LB-TRR |
|
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.44V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.44V
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| DLA100B800LB-TUB |
|
Hersteller: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.44V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 124A
Max. forward impulse current: 0.4kA
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.44V
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| PLA140L |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| PLA140LS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| PLA140LSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| IXKH70N60C5 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
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| IXKT70N60C5 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Features of semiconductor devices: super junction coolmos
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| IXKT70N60C5-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 66A; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 66A
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 66A; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 66A
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
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| IXKT70N60C5-TUB |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 68A; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 68A
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 68A; D3PAK,TO268
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 68A
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 150nC
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| DSI2X55-12A |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.22V
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.22V
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
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| IXTQ130N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
Produkt ist nicht verfügbar
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| IXFA130N10T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263AB; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263AB; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
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| IXFA130N10T2-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
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| IXFP130N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO220-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO220-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
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| IXTH130N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO247-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 130A; 360W; TO247-3; 67ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 9.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 104nC
Application: automotive industry
Reverse recovery time: 67ns
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| MCC44-16io1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 49A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 49A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC3714CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Polarisation: unipolar
Drain current: 0.24A
Kind of channel: depletion
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 14Ω
Mounting: SMD
Power dissipation: 1.4W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Polarisation: unipolar
Drain current: 0.24A
Kind of channel: depletion
Drain-source voltage: 350V
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: SOT89
On-state resistance: 14Ω
Mounting: SMD
Power dissipation: 1.4W
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| IXFR180N15P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
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