| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IXTA44P15T | IXYS |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263 Case: TO263 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Gate charge: 175nC Reverse recovery time: 140ns On-state resistance: 65mΩ Power dissipation: 298W Gate-source voltage: ±15V |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP44P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns Case: TO220AB Mounting: THT Kind of channel: enhancement Type of transistor: P-MOSFET Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Gate charge: 175nC Reverse recovery time: 140ns On-state resistance: 65mΩ Power dissipation: 298W Gate-source voltage: ±15V |
auf Bestellung 289 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH44P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns Case: TO247-3 Mounting: THT Kind of channel: enhancement Type of transistor: P-MOSFET Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Gate charge: 175nC Reverse recovery time: 140ns On-state resistance: 65mΩ Power dissipation: 298W Gate-source voltage: ±15V |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA16E800PN | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube Mounting: THT Type of thyristor: thyristor Kind of package: tube Gate current: 50mA Load current: 10A Max. load current: 16A Max. forward impulse current: 195A Max. off-state voltage: 0.8kV Case: TO220FP |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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PLA160S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-on time: 50µs Turn-off time: 50µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA Control voltage: 1.8...2.8V DC On-state resistance: 100Ω Switched voltage: max. 300V AC; max. 300V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS Case: DIP6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PLA160STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-on time: 50µs Turn-off time: 50µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA Control voltage: 1.8...2.8V DC On-state resistance: 100Ω Switched voltage: max. 300V AC; max. 300V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS Case: DIP6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
 +1 |
MMIX1F132N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Case: SMPD Gate-source voltage: ±30V On-state resistance: 43mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 267nC Reverse recovery time: 250ns Pulsed drain current: 330A Power dissipation: 520W Technology: HiPerFET™; Polar3™ |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN132N50P3 | IXYS |
Category: Transistor modules MOSFET Description: Semiconductor module; single transistor; 500V; 112A; SOT227B Polarisation: unipolar Drain-source voltage: 500V Drain current: 112A Case: SOT227B Gate-source voltage: ±40V On-state resistance: 39mΩ Kind of channel: enhancement Semiconductor structure: single transistor Gate charge: 250nC Reverse recovery time: 250ns Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor Pulsed drain current: 330A Power dissipation: 1.5kW Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFB132N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 267nC Reverse recovery time: 250ns Power dissipation: 1890W Technology: HiPerFET™; Polar3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFL132N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Case: ISOPLUS264™ On-state resistance: 43mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 250nC Power dissipation: 520W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTY01N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.1A Power dissipation: 25W Case: TO252 On-state resistance: 80Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP32P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Case: TO220AB Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -32A Reverse recovery time: 190ns Gate charge: 185nC On-state resistance: 0.13Ω Gate-source voltage: ±15V Power dissipation: 300W |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP32P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Case: TO220AB Technology: TrenchP™ Kind of package: tube Polarisation: unipolar Drain-source voltage: -50V Drain current: -32A Reverse recovery time: 26ns Gate charge: 46nC On-state resistance: 39mΩ Gate-source voltage: ±15V Power dissipation: 83W |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP30N25X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 36W Case: TO220FP On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 82ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFA30N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 82ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTH1N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1A Power dissipation: 520W Case: TO247-3 On-state resistance: 80Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs Gate charge: 46nC |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCMA110P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXGH10N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 29nC Turn-on time: 107ns Turn-off time: 240ns Collector current: 5A Pulsed collector current: 20A Gate-emitter voltage: ±20V Power dissipation: 140W Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Type of transistor: IGBT Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXGH10N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 32nC Turn-on time: 0.3µs Turn-off time: 630ns Collector current: 10A Pulsed collector current: 70A Gate-emitter voltage: ±20V Power dissipation: 110W Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Type of transistor: IGBT Technology: NPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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LF2103NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 10...20V Voltage class: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTA44P15T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.29 EUR |
| 12+ | 6.13 EUR |
| 13+ | 5.55 EUR |
| 50+ | 4.78 EUR |
| IXTP44P15T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.49 EUR |
| 16+ | 4.56 EUR |
| IXTH44P15T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Gate charge: 175nC
Reverse recovery time: 140ns
On-state resistance: 65mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.09 EUR |
| 9+ | 8.02 EUR |
| 12+ | 6.46 EUR |
| 30+ | 6.39 EUR |
| CLA16E800PN |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 0.8kV
Case: TO220FP
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 10A
Max. load current: 16A
Max. forward impulse current: 195A
Max. off-state voltage: 0.8kV
Case: TO220FP
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| PLA160S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PLA160STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
Control voltage: 1.8...2.8V DC
On-state resistance: 100Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Case: DIP6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F132N50P3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Pulsed drain current: 330A
Power dissipation: 520W
Technology: HiPerFET™; Polar3™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 58.34 EUR |
| 3+ | 51.59 EUR |
| 10+ | 46.33 EUR |
| IXFN132N50P3 |
|
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 500V; 112A; SOT227B
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Category: Transistor modules MOSFET
Description: Semiconductor module; single transistor; 500V; 112A; SOT227B
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 250nC
Reverse recovery time: 250ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFB132N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 267nC
Reverse recovery time: 250ns
Power dissipation: 1890W
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFL132N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Power dissipation: 520W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTY01N100 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO252
On-state resistance: 80Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.33 EUR |
| 35+ | 2.06 EUR |
| 39+ | 1.86 EUR |
| 70+ | 1.82 EUR |
| IXTP32P20T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.52 EUR |
| 10+ | 7.75 EUR |
| 11+ | 7.02 EUR |
| IXTP32P05T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Reverse recovery time: 26ns
Gate charge: 46nC
On-state resistance: 39mΩ
Gate-source voltage: ±15V
Power dissipation: 83W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.11 EUR |
| IXFP30N25X3M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFA30N25X3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH1N450HV |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 80Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Gate charge: 46nC
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 44.14 EUR |
| 5+ | 43.6 EUR |
| MCMA110P1600TA |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH10N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 29nC
Turn-on time: 107ns
Turn-off time: 240ns
Collector current: 5A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH10N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LF2103NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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