| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXXH30N65C4D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 47nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 65ns Turn-off time: 161ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 136A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXYP30N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXXH30N65B4D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 52nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 65ns Turn-off time: 206ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 146A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXYH30N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXYH30N65C3H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXYT30N65C3H1HV | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO268HV Mounting: SMD Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IXTP36P15P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 55nC Reverse recovery time: 228ns |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTR36P15P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -22A Power dissipation: 150W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 55nC Reverse recovery time: 150ns |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA36P15P | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 55nC Reverse recovery time: 228ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTH36P15P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 55nC Reverse recovery time: 228ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTQ36P15P | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -36A Power dissipation: 300W Case: TO3P Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 55nC Reverse recovery time: 228ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MCC95-08io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.5V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH26N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO247-3 On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Gate-source voltage: ±30V Technology: HiPerFET™; Polar3™ |
auf Bestellung 406 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH26N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.23Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ26N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 400W Case: TO3P On-state resistance: 0.23Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 300ns |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA26N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO263 On-state resistance: 0.25Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFQ26N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO3P On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFJ26N50P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 180W Case: ISO247™ On-state resistance: 0.295Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Gate-source voltage: ±30V Pulsed drain current: 78A Technology: HiPerFET™; Polar3™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTT26N50P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 400W Case: TO268 On-state resistance: 0.23Ω Mounting: SMD Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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CPC1009NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Switched voltage: max. 100V AC; max. 100V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 2ms Turn-off time: 0.5ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 150mA On-state resistance: 8Ω Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFQ28N60P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 695W Case: TO3P On-state resistance: 0.26Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MCMA110P1200TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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OMA160S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 125µs Turn-on time: 125µs Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| OMA160STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 125µs Turn-on time: 125µs Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| CPC1393GRTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Kind of output: MOSFET Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA Max. operating current: 90mA On-state resistance: 50Ω Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Insulation voltage: 5kV Type of relay: solid state Manufacturer series: OptoMOS Contacts configuration: SPST-NO Body dimensions: 4.57x6.35x3.3mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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LAA100 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 120mA Control current max.: 50mA On-state resistance: 25Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA100L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Manufacturer series: OptoMOS Mounting: THT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 120mA Control current max.: 50mA On-state resistance: 25Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA100 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: THT Operating temperature: -40...85°C Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 25Ω Manufacturer series: OptoMOS Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA100L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: THT Operating temperature: -40...85°C Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 25Ω Manufacturer series: OptoMOS Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA100S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Operating temperature: -40...85°C Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 25Ω Manufacturer series: OptoMOS Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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LCA100LS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Operating temperature: -40...85°C Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 25Ω Manufacturer series: OptoMOS Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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LAA100S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x3.3mm Max. operating current: 120mA Control current max.: 50mA On-state resistance: 25Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI60-02A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 69A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 540A Case: TO247-2 Max. forward voltage: 0.88V Power dissipation: 150W Reverse recovery time: 35ns Technology: FRED |
auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI120-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W Power dissipation: 357W Case: TO247-2 Mounting: THT Kind of package: tube Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 40ns Max. forward voltage: 1.55V Max. forward impulse current: 540A Load current: 109A Max. off-state voltage: 1.2kV Technology: FRED Semiconductor structure: single diode |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI120-12AZ-TUB | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V Power dissipation: 357W Case: TO268AAHV Mounting: SMD Kind of package: tube Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 40ns Max. forward voltage: 1.55V Max. forward impulse current: 540A Load current: 109A Max. off-state voltage: 1.2kV Technology: FRED Semiconductor structure: single diode |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI2X61-10B | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 2.3V Max. load current: 60A Max. forward impulse current: 540A Load current: 60A x2 Max. off-state voltage: 1kV Semiconductor structure: double independent Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK120N30P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264 Kind of package: tube Polarisation: unipolar Gate charge: 150nC On-state resistance: 27mΩ Drain current: 120A Drain-source voltage: 300V Power dissipation: 1.13kW Case: TO264 Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXFK120N25P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264 Kind of package: tube Polarisation: unipolar Gate charge: 185nC On-state resistance: 24mΩ Drain current: 120A Drain-source voltage: 250V Power dissipation: 700W Case: TO264 Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXYR100N120C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™ Mounting: THT Turn-on time: 143ns Gate charge: 260nC Turn-off time: 271ns Case: PLUS247™ Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 56A Technology: GenX3™; Planar; XPT™ Pulsed collector current: 450A Power dissipation: 484W Kind of package: tube Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MCMA140PD1200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Case: TO240AA Mechanical mounting: screw Gate current: 150/200mA Max. forward voltage: 1.28V Threshold on-voltage: 0.85V Load current: 140A Max. forward impulse current: 2.4kA Max. off-state voltage: 1.2kV Max. load current: 220A Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCMA1400E1600CD | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 1.1kA Case: ComPack Max. forward voltage: 1.43V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 600/800mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCMA140P1800TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 140A Case: TO240AA Max. forward voltage: 1.7V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDMA1400C1600CC | IXYS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.6kV Load current: 700A x2 Case: ComPack Max. forward voltage: 1.05V Max. forward impulse current: 20kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCMA140P1200TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 140A Case: TO240AA Max. forward voltage: 1.7V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCMA140P1400TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 140A Case: TO240AA Max. forward voltage: 1.7V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 150/200mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MCMA140P1600TA-NI | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 140A Case: TO240AA Max. forward voltage: 1.28V Max. forward impulse current: 2.04kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 150/200mA Max. load current: 220A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDMA140P1200TG | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDMA140P1600TG | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.38kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 140A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MDMA140P1800TG | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
|
IXTA24N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO263 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IXTH24N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Technology: X2-Class Reverse recovery time: 390ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IXTY18P10T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Power dissipation: 83W Case: TO252 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Technology: TrenchP™ Reverse recovery time: 62ns |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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|
IXTA18P10T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Power dissipation: 83W Case: TO263 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Technology: TrenchP™ Reverse recovery time: 62ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IXFK420N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264 Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Reverse recovery time: 140ns Gate charge: 670nC On-state resistance: 2.6mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 420A Power dissipation: 1.67kW Kind of channel: enhancement Case: TO264 Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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|
CPC1301GRTR | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 1000-8000%@1mA Collector-emitter voltage: 350V Turn-on time: 1µs Turn-off time: 60µs Slew rate: 0.25V/μs Max. off-state voltage: 5V Trigger current: 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IXFH18N100Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3 Mounting: THT Drain-source voltage: 1kV Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247-3 Kind of package: tube Polarisation: unipolar Gate charge: 90nC On-state resistance: 0.66Ω Drain current: 18A Power dissipation: 830W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
IXFT18N100Q3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268 Mounting: SMD Drain-source voltage: 1kV Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO268 Kind of package: tube Polarisation: unipolar Gate charge: 90nC On-state resistance: 0.66Ω Drain current: 18A Power dissipation: 830W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
CPC1014NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
CPC1020NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Switched voltage: max. 30V AC; max. 30V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 1.2A On-state resistance: 0.25Ω Relay variant: current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
CPC1025NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Switched voltage: max. 400V AC; max. 400V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 2ms Turn-off time: 1ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 30Ω Relay variant: 1-phase; current source |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXXH30N65C4D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYP30N65C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXXH30N65B4D1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N65C3 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYH30N65C3H1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYT30N65C3H1HV |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP36P15P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.12 EUR |
| 15+ | 4.92 EUR |
| 50+ | 4.83 EUR |
| IXTR36P15P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 150ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 150ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.14 EUR |
| 12+ | 6.31 EUR |
| 13+ | 5.66 EUR |
| 30+ | 5.29 EUR |
| IXTA36P15P |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH36P15P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ36P15P |
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Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCC95-08io1B |
![]() |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 48.65 EUR |
| 3+ | 45.43 EUR |
| 10+ | 40.54 EUR |
| IXFH26N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
auf Bestellung 406 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.31 EUR |
| 11+ | 6.99 EUR |
| 12+ | 6.31 EUR |
| IXFH26N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.64 EUR |
| 12+ | 6.31 EUR |
| IXTQ26N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.29 EUR |
| 11+ | 6.71 EUR |
| 13+ | 5.82 EUR |
| 30+ | 5.75 EUR |
| IXFA26N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| IXFQ26N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXFJ26N50P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTT26N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CPC1009NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 8Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 8Ω
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFQ28N60P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCMA110P1200TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
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| OMA160S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| OMA160STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1393GRTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA100 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 14+ | 5.36 EUR |
| 250+ | 4.33 EUR |
| LAA100L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5 EUR |
| 50+ | 4.3 EUR |
| LCA100 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.93 EUR |
| 50+ | 3.23 EUR |
| 250+ | 2.59 EUR |
| LCA100L |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.12 EUR |
| 50+ | 3.35 EUR |
| 250+ | 2.7 EUR |
| LCA100S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 50+ | 3.15 EUR |
| LCA100LS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 24+ | 3 EUR |
| LAA100S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.22 EUR |
| 50+ | 5.39 EUR |
| DSEI60-02A | ![]() |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.44 EUR |
| 11+ | 7.06 EUR |
| 12+ | 6.13 EUR |
| 30+ | 5.65 EUR |
| DSEI120-12A | ![]() |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.51 EUR |
| DSEI120-12AZ-TUB |
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Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.44 EUR |
| 6+ | 14.19 EUR |
| 10+ | 12.58 EUR |
| DSEI2X61-10B |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. load current: 60A
Max. forward impulse current: 540A
Load current: 60A x2
Max. off-state voltage: 1kV
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. load current: 60A
Max. forward impulse current: 540A
Load current: 60A x2
Max. off-state voltage: 1kV
Semiconductor structure: double independent
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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| IXFK120N30P3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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| IXFK120N25P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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| IXYR100N120C3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Mounting: THT
Turn-on time: 143ns
Gate charge: 260nC
Turn-off time: 271ns
Case: PLUS247™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 56A
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 450A
Power dissipation: 484W
Kind of package: tube
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Mounting: THT
Turn-on time: 143ns
Gate charge: 260nC
Turn-off time: 271ns
Case: PLUS247™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 56A
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 450A
Power dissipation: 484W
Kind of package: tube
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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| MCMA140PD1200TB |
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Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
Produkt ist nicht verfügbar
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| MCMA1400E1600CD |
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 600/800mA
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 600/800mA
Produkt ist nicht verfügbar
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| MCMA140P1800TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Produkt ist nicht verfügbar
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| MDMA1400C1600CC |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 700A x2
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 700A x2
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| MCMA140P1200TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Produkt ist nicht verfügbar
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| MCMA140P1400TA |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Produkt ist nicht verfügbar
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| MCMA140P1600TA-NI |
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Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
Produkt ist nicht verfügbar
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| MDMA140P1200TG |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| MDMA140P1600TG |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 140A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 140A
Produkt ist nicht verfügbar
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| MDMA140P1800TG |
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Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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| IXTA24N65X2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
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| IXTH24N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
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| IXTY18P10T |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.66 EUR |
| 26+ | 2.85 EUR |
| IXTA18P10T |
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Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
Produkt ist nicht verfügbar
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| IXFK420N10T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 20.16 EUR |
| 5+ | 17.17 EUR |
| CPC1301GRTR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 60µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 60µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
Produkt ist nicht verfügbar
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| IXFH18N100Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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| IXFT18N100Q3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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| CPC1014NTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| CPC1020NTR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
On-state resistance: 0.25Ω
Relay variant: current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
On-state resistance: 0.25Ω
Relay variant: current source
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| CPC1025NTR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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