| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IXFR180N15P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Reverse recovery time: 200ns Gate charge: 240nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
DPF30I300PA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 30A; Ifsm: 390A; TO220AC; tube; 175W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 390A Case: TO220AC Kind of package: tube Max. forward voltage: 1.17V Heatsink thickness: 1.14...1.39mm Reverse recovery time: 55ns Power dissipation: 175W Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
DPF60C300HB | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 30Ax2; Ifsm: 400A; TO247-3; tube; 55ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 0.4kA Case: TO247-3 Kind of package: tube Max. forward voltage: 0.97V Reverse recovery time: 55ns Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
DPG30I300PA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 30A; Ifsm: 360A; TO220AC; tube; 175W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 360A Case: TO220AC Kind of package: tube Max. forward voltage: 1.35V Heatsink thickness: 1.14...1.39mm Reverse recovery time: 35ns Power dissipation: 175W Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
DSEP2X31-03A | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw Max. off-state voltage: 300V Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 0.3kA Case: SOT227B Kind of package: tube Max. forward voltage: 0.9V Max. load current: 60A Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFR180N15P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DPF30I300PA |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 390A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 390A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.17V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 55ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 390A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 390A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.17V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 55ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| DPF60C300HB |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; Ifsm: 400A; TO247-3; tube; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.4kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 0.97V
Reverse recovery time: 55ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; Ifsm: 400A; TO247-3; tube; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.4kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 0.97V
Reverse recovery time: 55ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| DPG30I300PA |
![]() |
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 360A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 360A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 360A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 360A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEP2X31-03A |
![]() |
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Kind of package: tube
Max. forward voltage: 0.9V
Max. load current: 60A
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Kind of package: tube
Max. forward voltage: 0.9V
Max. load current: 60A
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)







