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IXFR180N15P IXFR180N15P IXYS IXFR180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
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DPF30I300PA DPF30I300PA IXYS DPF30I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 390A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 390A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.17V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 55ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; Ifsm: 400A; TO247-3; tube; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.4kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 0.97V
Reverse recovery time: 55ns
Technology: HiPerFRED™ 2nd Gen
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DPG30I300PA DPG30I300PA IXYS media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 360A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 360A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
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DSEP2X31-03A DSEP2X31-03A IXYS media?resourcetype=datasheets&itemid=e421385f-2d09-4cb8-a0b8-5c30299b69b5&filename=Littelfuse-Power-Semiconductors-DSEP2x31-03A-Datasheet description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Kind of package: tube
Max. forward voltage: 0.9V
Max. load current: 60A
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
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IXFR180N15P IXFR180N15P.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 150V; 100A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 200ns
Gate charge: 240nC
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DPF30I300PA DPF30I300PA.pdf
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 390A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 390A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.17V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 55ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
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DPF60C300HB DPF60C300HB.pdf
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; Ifsm: 400A; TO247-3; tube; 55ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.4kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 0.97V
Reverse recovery time: 55ns
Technology: HiPerFRED™ 2nd Gen
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DPG30I300PA media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; Ifsm: 360A; TO220AC; tube; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 360A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.35V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
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DSEP2X31-03A description media?resourcetype=datasheets&itemid=e421385f-2d09-4cb8-a0b8-5c30299b69b5&filename=Littelfuse-Power-Semiconductors-DSEP2x31-03A-Datasheet
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Case: SOT227B
Kind of package: tube
Max. forward voltage: 0.9V
Max. load current: 60A
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
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