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IXXR100N60B3H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™ Type of transistor: IGBT Power dissipation: 400W Case: PLUS247™ Mounting: THT Gate charge: 143nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 440A Collector-emitter voltage: 600V Technology: GenX3™; Planar; XPT™ Turn-on time: 92ns Turn-off time: 350ns |
Produkt ist nicht verfügbar |
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IXYH100N65A3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 470W Case: TO247-3 Mounting: THT Gate charge: 178nC Kind of package: tube Turn-on time: 87ns Turn-off time: 459ns Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
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DPG10I300PA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W Mounting: THT Semiconductor structure: single diode Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220AC Type of diode: rectifying Kind of package: tube Reverse recovery time: 35ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.27V Load current: 10A Power dissipation: 65W Max. forward impulse current: 140A Max. off-state voltage: 300V |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH74N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 74A Power dissipation: 480W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; PolarHT™ Reverse recovery time: 200ns |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBK55N300 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264 Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Case: TO264 Gate charge: 335nC Turn-off time: 475ns Turn-on time: 637ns Gate-emitter voltage: ±20V Collector current: 55A Pulsed collector current: 600A Power dissipation: 625W Collector-emitter voltage: 3kV Kind of package: tube Technology: BiMOSFET™ |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFX100N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 30mΩ Mounting: THT Gate charge: 183nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXFN100N65X2 | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 78A Pulsed drain current: 200A Power dissipation: 595W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 30mΩ Gate charge: 183nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYN100N65B3D1 | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 600W Case: SOT227B Semiconductor structure: single transistor Mechanical mounting: screw Gate-emitter voltage: ±20V Electrical mounting: screw Collector current: 100A Type of semiconductor module: IGBT Pulsed collector current: 490A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
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IXYN100N65C3H1 | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W Technology: GenX3™; XPT™ Power dissipation: 600W Case: SOT227B Semiconductor structure: single transistor Mechanical mounting: screw Gate-emitter voltage: ±20V Electrical mounting: screw Collector current: 90A Type of semiconductor module: IGBT Pulsed collector current: 420A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
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IXTP02N120P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us Type of transistor: N-MOSFET Power dissipation: 33W Case: TO220AB Mounting: THT Kind of package: tube On-state resistance: 75Ω Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 1.6µs Drain current: 0.2A |
Produkt ist nicht verfügbar |
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IXTY02N120P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us Type of transistor: N-MOSFET Power dissipation: 33W Case: TO252 Mounting: SMD Kind of package: tube On-state resistance: 75Ω Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 1.6µs Drain current: 0.2A |
Produkt ist nicht verfügbar |
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IXGK320N60B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 320A Power dissipation: 1.7kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mounting: THT Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MMIX1G320N60B3 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 600V Collector current: 180A Power dissipation: 1kW Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mounting: SMD Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns |
Produkt ist nicht verfügbar |
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CPC1001NTR | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C Switched voltage: max. 30V DC Operating temperature: -40...85°C Insulation voltage: 1.5kV Kind of output: transistor Type of optocoupler: optocoupler Mounting: SMD Case: SOP4 Turn-on time: 1µs Turn-off time: 30µs Control current max.: 5mA Max. operating current: 0.1A Number of channels: 1 CTR@If: 100-800%@0.2mA |
Produkt ist nicht verfügbar |
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XBB170 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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XBB170P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
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CPC1333GR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: DIP4 Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 2ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
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PLB171P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NC Max. operating current: 80mA Switched voltage: max. 800V AC; max. 800V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 90Ω Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x2.16mm Control current max.: 50mA Insulation voltage: 5kV Kind of output: MOSFET |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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LBB110 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTJ6N150 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Power dissipation: 125W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 3.85Ω Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXYH40N90C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 40A Power dissipation: 500W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 74nC Kind of package: tube Turn-on time: 81ns Turn-off time: 237ns |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP102N15T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 97ns |
Produkt ist nicht verfügbar |
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CPC1330GR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Manufacturer series: OptoMOS Case: DIP4 Mounting: SMT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 1ms Turn-on time: 2ms Body dimensions: 4.57x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 30Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 5kV Relay variant: 1-phase; current source |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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DSEI30-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 26A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-2 Max. forward voltage: 2.2V Power dissipation: 138W Reverse recovery time: 40ns Technology: FRED |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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| XS170STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| PAA127STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 200mA Switched voltage: max. 280V AC; max. 280V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 500µs Turn-off time: 0.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LAA108STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 300mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LCA182STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LCA712STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.5Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2.5ms Turn-off time: 350µs Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LAA110LSTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PLA170STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| PLA192STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| LCC120STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LBB126STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 15Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LCA100LSTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LCA129STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 8ms Turn-off time: 8ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| MUBW25-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A Collector current: 21A Power dissipation: 100W Case: E1-Pack Gate-emitter voltage: ±20V Pulsed collector current: 40A Mechanical mounting: screw Type of semiconductor module: IGBT Application: motors Technology: NPT Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXTP12N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA12N50P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: HiPerFET™; Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP12N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC On-state resistance: 0.5Ω Kind of channel: enhancement Drain current: 12A Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
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IXTA12N50P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
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IXFR26N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.43Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 197nC |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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PS2601 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase Type of relay: solid state Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 600V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CPC1972GS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| CPC1972GSTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IXFP38N30X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 35nC Reverse recovery time: 90ns On-state resistance: 50mΩ Drain current: 38A Gate-source voltage: ±20V Power dissipation: 240W Drain-source voltage: 300V Kind of channel: enhancement Technology: HiPerFET™; X3-Class Case: TO220AB |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP38N30X3M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 35nC Reverse recovery time: 90ns On-state resistance: 50mΩ Drain current: 38A Gate-source voltage: ±20V Power dissipation: 34W Drain-source voltage: 300V Kind of channel: enhancement Technology: HiPerFET™; X3-Class Case: TO220FP |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA38N30X3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 240W Case: TO263 On-state resistance: 50mΩ Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns Gate-source voltage: ±20V Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IXTH38N30L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.1Ω Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| LDA102S | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 50-350%@1mA Collector-emitter voltage: 500mV Turn-on time: 7µs Turn-off time: 20µs Trigger current: 50mA |
Produkt ist nicht verfügbar |
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IXDF602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 93ns Turn-on time: 93ns |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V |
auf Bestellung 1047 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V |
auf Bestellung 513 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDN609PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 655 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDF604PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 79ns Turn-on time: 81ns |
auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 93ns Turn-on time: 93ns |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDD614SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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IXDI602SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 93ns Turn-on time: 93ns |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
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FUO22-16N | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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| VUO122-16NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 125A Max. forward impulse current: 1kA Electrical mounting: THT Version: module Max. forward voltage: 1.13V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXXR100N60B3H1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Power dissipation: 400W
Case: PLUS247™
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Power dissipation: 400W
Case: PLUS247™
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 92ns
Turn-off time: 350ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYH100N65A3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 470W
Case: TO247-3
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 470W
Case: TO247-3
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DPG10I300PA |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.56 EUR |
| IXFH74N20P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 74A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Reverse recovery time: 200ns
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.09 EUR |
| 30+ | 5.76 EUR |
| IXBK55N300 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 114.17 EUR |
| 10+ | 111.54 EUR |
| IXFX100N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN100N65X2 |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 183nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 183nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYN100N65B3D1 |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Electrical mounting: screw
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 490A
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Electrical mounting: screw
Collector current: 100A
Type of semiconductor module: IGBT
Pulsed collector current: 490A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYN100N65C3H1 |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Electrical mounting: screw
Collector current: 90A
Type of semiconductor module: IGBT
Pulsed collector current: 420A
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Electrical mounting: screw
Collector current: 90A
Type of semiconductor module: IGBT
Pulsed collector current: 420A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP02N120P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTY02N120P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Kind of package: tube
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.6µs
Drain current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGK320N60B3 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1G320N60B3 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1001NTR |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Control current max.: 5mA
Max. operating current: 0.1A
Number of channels: 1
CTR@If: 100-800%@0.2mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP4
Turn-on time: 1µs
Turn-off time: 30µs
Control current max.: 5mA
Max. operating current: 0.1A
Number of channels: 1
CTR@If: 100-800%@0.2mA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| XBB170 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.99 EUR |
| 14+ | 5.23 EUR |
| 250+ | 4.43 EUR |
| XBB170P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.59 EUR |
| 50+ | 5.63 EUR |
| CPC1333GR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 36+ | 1.99 EUR |
| 100+ | 1.74 EUR |
| PLB171P |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.29 EUR |
| 13+ | 5.81 EUR |
| 50+ | 5.29 EUR |
| LBB110 | ![]() |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.38 EUR |
| 15+ | 5.11 EUR |
| 100+ | 4.72 EUR |
| IXTJ6N150 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 125W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 3.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 125W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 3.85Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYH40N90C3D1 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12 EUR |
| 7+ | 11.15 EUR |
| 10+ | 9.91 EUR |
| 30+ | 8.25 EUR |
| IXTP102N15T |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1330GR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Case: DIP4
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Case: DIP4
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| DSEI30-12A |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.52 EUR |
| 17+ | 4.23 EUR |
| XS170STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PAA127STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 280V AC; max. 280V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 500µs
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 200mA
Switched voltage: max. 280V AC; max. 280V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 500µs
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA108STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA182STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCA712STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 350µs
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 350µs
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA110LSTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PLA170STR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| PLA192STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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| LCC120STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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| LBB126STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| LCA100LSTR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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| LCA129STR |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 8ms
Turn-off time: 8ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 8ms
Turn-off time: 8ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| MUBW25-06A6K |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: motors
Technology: NPT
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: motors
Technology: NPT
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
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| IXTP12N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| 23+ | 3.2 EUR |
| 26+ | 2.83 EUR |
| 50+ | 2.56 EUR |
| 250+ | 2.52 EUR |
| IXFA12N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.46 EUR |
| IXFP12N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
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| IXTA12N50P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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| IXFR26N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 51.59 EUR |
| 3+ | 46.43 EUR |
| 10+ | 41.03 EUR |
| PS2601 |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| CPC1972GS |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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| CPC1972GSTR |
![]() |
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| IXFP38N30X3 |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 240W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 240W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220AB
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.12 EUR |
| 16+ | 4.6 EUR |
| 18+ | 4.08 EUR |
| 50+ | 3.66 EUR |
| IXFP38N30X3M |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220FP
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.99 EUR |
| 17+ | 4.39 EUR |
| IXFA38N30X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Gate-source voltage: ±20V
Technology: HiPerFET™; X3-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Gate-source voltage: ±20V
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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| IXTH38N30L2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LDA102S |
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Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IXDF602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2 EUR |
| 51+ | 1.4 EUR |
| IXDD614PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
auf Bestellung 1047 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 35+ | 2.07 EUR |
| 37+ | 1.97 EUR |
| IXDI614PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
auf Bestellung 513 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.12 EUR |
| 27+ | 2.69 EUR |
| 31+ | 2.33 EUR |
| 50+ | 2.1 EUR |
| 100+ | 2.06 EUR |
| IXDN609PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.92 EUR |
| 51+ | 1.42 EUR |
| 55+ | 1.32 EUR |
| IXDF604PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 39+ | 1.87 EUR |
| 50+ | 1.63 EUR |
| 100+ | 1.52 EUR |
| 250+ | 1.36 EUR |
| IXDI602PI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.5 EUR |
| 46+ | 1.57 EUR |
| 54+ | 1.34 EUR |
| 61+ | 1.19 EUR |
| 100+ | 1.07 EUR |
| 250+ | 0.93 EUR |
| IXDD614SI |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.48 EUR |
| 22+ | 3.36 EUR |
| IXDI602SIA |
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Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.5 EUR |
| 46+ | 1.57 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.03 EUR |
| 300+ | 0.97 EUR |
| FUO22-16N |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 21.24 EUR |
| 5+ | 18.36 EUR |
| VUO122-16NO7 |
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Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
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