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CPC1943GS CPC1943GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
auf Bestellung 4 Stücke:
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4+17.88 EUR
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CPC1916Y CPC1916Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4D709785518BF&compId=CPC1916.pdf?ci_sign=9583ecfd8a4e7c236662a12baf386e32aa0b9f6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 2.5A
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.34Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 58 Stücke:
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6+13.73 EUR
12+6.02 EUR
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CPC1967J CPC1967J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 2.5kV
Relay variant: 1-phase; current source
auf Bestellung 99 Stücke:
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4+18.82 EUR
25+18.18 EUR
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IXTQ460P2 IXTQ460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar2™
auf Bestellung 139 Stücke:
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11+6.68 EUR
15+4.83 EUR
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IXTP260N055T2 IXTP260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 8 Stücke:
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8+8.94 EUR
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IXTK32P60P IXTK32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B6EE82DC4748&compId=IXTK32P60P.pdf?ci_sign=6d1ae1f0adba3492c1b4312d0bc082adcccb9529 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Mounting: THT
Kind of package: tube
Case: TO264
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Gate charge: 196nC
Reverse recovery time: 480ns
On-state resistance: 0.35Ω
Power dissipation: 890W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
auf Bestellung 273 Stücke:
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4+20.92 EUR
10+19.2 EUR
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IXTT16P60P IXTT16P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Kind of package: tube
Case: TO268
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Gate charge: 92nC
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
auf Bestellung 127 Stücke:
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5+16.06 EUR
10+11.37 EUR
30+11.27 EUR
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IXTN60N50L2 IXTN60N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9309137629820&compId=IXTN60N50L2.pdf?ci_sign=15f12dac8ab19059b2614dc81037575359837d16 Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Technology: Linear L2™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTN600N04T2 IXTN600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4 Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 1.8kA
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.3mΩ
Power dissipation: 940W
Gate-source voltage: ±30V
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IXTX60N50L2 IXTX60N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.1Ω
Drain-source voltage: 500V
Drain current: 60A
Gate charge: 610nC
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
Kind of channel: enhancement
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IXTK60N50L2 IXTK60N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
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IXTK600N04T2 IXTK600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.5mΩ
Power dissipation: 1.25kW
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IXTQ60N20L2 IXTQ60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTT60N20L2 IXTT60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTX600N04T2 IXTX600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.5mΩ
Power dissipation: 1.25kW
Produkt ist nicht verfügbar
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IXTP460P2 IXTP460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTA260N055T2 IXTA260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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IXTA260N055T2-7 IXTA260N055T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC815820&compId=IXTA260N055T2-7.pdf?ci_sign=20af502dc1bd984d39825892a1d6786d67df0a27 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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IXTA460P2 IXTA460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO263
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTT360N055T2 IXTT360N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 78ns
Features of semiconductor devices: thrench gate power mosfet
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IXTR32P60P IXTR32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E5C3336AD18BF&compId=IXTR32P60P.pdf?ci_sign=eed072ed973f6a65dd9ee646ce6abdf7069fea33 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -18A
Power dissipation: 310W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
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IXTN32P60P IXTN32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Pulsed drain current: -96A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Gate charge: 196nC
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTT10P60 IXTT10P60 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO268; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -10A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXTX32P60P IXTX32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E5766289BB8BF&compId=IXT_32P60P.pdf?ci_sign=e2aa7b6252b406ed32c74c9a7a20c4aba482499f Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
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IXFR80N50Q3 IXFR80N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC611820&compId=IXFR80N50Q3.pdf?ci_sign=196a018cdeecf0092ac54030991190e895b55b65 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
2+36.01 EUR
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IXFH60N50P3 IXFH60N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A860C1049498BF&compId=IXF_60N50P3.pdf?ci_sign=e076b3a745c1d0793acafb7d1dc93009289b7b73 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.08 EUR
8+9.18 EUR
9+8.68 EUR
30+8.38 EUR
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MCC26-12io8B MCC26-12io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 0.44kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 18 Stücke:
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3+25.71 EUR
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MCC95-18io1B MCC95-18io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D66AD9C64BE27&compId=MCC95-18IO1B-DTE.pdf?ci_sign=76aa368a76aabe9775dd10afb8da54ce46bf6113 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 2 Stücke:
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2+44.72 EUR
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IXGH72N60C3 IXGH72N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA8AE8E972D820&compId=IXGH72N60C3.pdf?ci_sign=e7439d07a94ee0168475277f41a96e4f84faad59 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 62ns
Turn-off time: 244ns
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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CS20-22MOF1 CS20-22MOF1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BDD65D23F377CA18&compId=CS20-22moF1.pdf?ci_sign=b0af0cfe7ddc5a60264d816efdb90ab3d73413df Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Type of thyristor: thyristor
Gate current: 250mA
Load current: 18A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DSDI60-16A DSDI60-16A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
auf Bestellung 236 Stücke:
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6+12.07 EUR
10+11.8 EUR
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IXFB210N20P IXFB210N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39CBF820&compId=IXFB210N20P.pdf?ci_sign=45107975032c44e04f2a5e02350874bd4d821178 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Drain-source voltage: 200V
Drain current: 210A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 10.5mΩ
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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LDA201 LDA201 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ABDD895F701EC&compId=LDA201.pdf?ci_sign=ea9bc7977b0278912611a4bb6621e7b18e8942eb Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 3.75kV; Uce: 30V
Collector-emitter voltage: 30V
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 104 Stücke:
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104+0.69 EUR
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IXTH04N300P3HV IXTH04N300P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917AF820&compId=IXTH04N300P3HV.pdf?ci_sign=462da40c2776e8330cfe3a15d83a604a60b6a8ac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247HV
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 13nC
Reverse recovery time: 1.1µs
Drain current: 0.4A
Power dissipation: 104W
On-state resistance: 190Ω
Drain-source voltage: 3kV
Kind of package: tube
Produkt ist nicht verfügbar
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IXTQ52P10P IXTQ52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO3P
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 193 Stücke:
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9+8.68 EUR
12+5.98 EUR
13+5.65 EUR
120+5.58 EUR
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IXTA52P10P IXTA52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 300 Stücke:
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8+9.25 EUR
12+5.98 EUR
13+5.65 EUR
50+5.43 EUR
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IXTH52P10P IXTH52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO247-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.47 EUR
11+6.75 EUR
12+6.38 EUR
120+6.19 EUR
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IXTK170P10P IXTK170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794BF4713B18748&compId=IXTK170P10P.pdf?ci_sign=f70b69b80f9b410a7c33f367002501ddeb7e430b Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: TO264
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IXTT90P10P IXTT90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 462W
Case: TO268
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IXTN170P10P IXTN170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A3DD0CC20748&compId=IXTN170P10P.pdf?ci_sign=836eb5a6f8f0b2903a734fc7c94f64d2235ce61f Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -510A
Drain current: -170A
Drain-source voltage: -100V
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Power dissipation: 890W
Gate-source voltage: ±30V
Technology: PolarP™
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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IXTP52P10P IXTP52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO220AB
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IXTR170P10P IXTR170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA056E66DE518BF&compId=IXTR170P10P.pdf?ci_sign=d1b7e100a10ee5eb6bd8252f488ba0934cedb550 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -100A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 15.4mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 312W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IXTR90P10P IXTR90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA06CD750E378BF&compId=IXTR90P10P.pdf?ci_sign=d99e0f8c856a9cad4c5296bc1863b57210e9c675 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -57A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 27mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 190W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IXTX170P10P IXTX170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA046B882FB78BF&compId=IXTX170P10P.pdf?ci_sign=94cd33348f2095bd4b19ade6fc8944ee1e626f80 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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MDD26-14N1B MDD26-14N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E035B7BAA55E28&compId=MDD26-14N1B-DTE.pdf?ci_sign=73f19312f31197fce47f8065185a9389bf591bc4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
auf Bestellung 26 Stücke:
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3+24.55 EUR
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MDD26-16N1B MDD26-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25D3853BA55EA&compId=MDD26-16N1B.pdf?ci_sign=e20b9a9d35d6193d30eaf696fc93a921c9ea7b87 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
auf Bestellung 24 Stücke:
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3+25.63 EUR
5+25.61 EUR
Mindestbestellmenge: 3
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MDD255-12N1 MDD255-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0130FD95C5E28&compId=MDD255-xxN1-DTE.pdf?ci_sign=f51e90d71cc41ee788c961880317ff1f84e4c330 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 270A x2
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-20N1 MDD255-20N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Produkt ist nicht verfügbar
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MDD255-16N1 MDD255-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Produkt ist nicht verfügbar
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MDD26-08N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82BE1B1D26A0C4&compId=MDD26-08N1B.pdf?ci_sign=96b683119e863b8b953690dcd665e1cb9aab78af pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 800V; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
Produkt ist nicht verfügbar
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MDD200-22N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E12DCDB379DE28&compId=MDD200-22N1-DTE.pdf?ci_sign=2cca8bdbfad489fe0eda61f2b7a2d0ecd141324f pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 350A
Produkt ist nicht verfügbar
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MDD255-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB839513945740C4&compId=MDD255-18N1.pdf?ci_sign=eb96324925779c867abbd73095ef58ecdb1b7ff9 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD26-18N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F12F916A40C4&compId=MDD26-18N1B.pdf?ci_sign=5b0fd26e9fde221b69763aebbdf4e2b1e654d674 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 0.65kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836BB6A54FE0C4&compId=MDD200-14N1.pdf?ci_sign=9c65bcb969b3e3e3a5895718e104f59faa6fc667 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E081E3E28A7E28&compId=MDD200-16N1-DTE.pdf?ci_sign=8dda3721dbf88572c903346fd69369515b29a002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 350A
Produkt ist nicht verfügbar
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MDD200-18N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8373F35902A0C4&compId=MDD200-18N1.pdf?ci_sign=4e6c82549feffa3540f48d23c8a1f65b2fbd7448 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-14N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8385D4534420C4&compId=MDD255-14N1.pdf?ci_sign=c6912c83be853c9131059a2e7874710509b6316e Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-22N1 MDD255-22N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Produkt ist nicht verfügbar
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IXFK48N60Q3 IXFK48N60Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D50AFCE6D67820&compId=IXFK(X)48N60Q3.pdf?ci_sign=88d6698196cd71ddff7d54284cef316093b06013 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH48N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 163ns
Produkt ist nicht verfügbar
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CPC1943GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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CPC1916Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4D709785518BF&compId=CPC1916.pdf?ci_sign=9583ecfd8a4e7c236662a12baf386e32aa0b9f6b
CPC1916Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 2.5A
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.34Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.73 EUR
12+6.02 EUR
Mindestbestellmenge: 6
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CPC1967J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354
CPC1967J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 2.5kV
Relay variant: 1-phase; current source
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.82 EUR
25+18.18 EUR
Mindestbestellmenge: 4
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IXTQ460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTQ460P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Mounting: THT
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar2™
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.68 EUR
15+4.83 EUR
Mindestbestellmenge: 11
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IXTP260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1
IXTP260N055T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Power dissipation: 480W
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IXTK32P60P pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B6EE82DC4748&compId=IXTK32P60P.pdf?ci_sign=6d1ae1f0adba3492c1b4312d0bc082adcccb9529
IXTK32P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Mounting: THT
Kind of package: tube
Case: TO264
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Gate charge: 196nC
Reverse recovery time: 480ns
On-state resistance: 0.35Ω
Power dissipation: 890W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.92 EUR
10+19.2 EUR
Mindestbestellmenge: 4
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IXTT16P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957
IXTT16P60P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Kind of package: tube
Case: TO268
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Gate charge: 92nC
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Power dissipation: 460W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.06 EUR
10+11.37 EUR
30+11.27 EUR
Mindestbestellmenge: 5
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IXTN60N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9309137629820&compId=IXTN60N50L2.pdf?ci_sign=15f12dac8ab19059b2614dc81037575359837d16
IXTN60N50L2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Technology: Linear L2™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXTN600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4
IXTN600N04T2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Kind of channel: enhancement
Technology: GigaMOS™; TrenchT2™
Type of semiconductor module: MOSFET transistor
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 1.8kA
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.3mΩ
Power dissipation: 940W
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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IXTX60N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9
IXTX60N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.1Ω
Drain-source voltage: 500V
Drain current: 60A
Gate charge: 610nC
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTK60N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9
IXTK60N50L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
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IXTK600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432
IXTK600N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.5mΩ
Power dissipation: 1.25kW
Produkt ist nicht verfügbar
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IXTQ60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTQ60N20L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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IXTT60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTT60N20L2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
Produkt ist nicht verfügbar
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IXTX600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432
IXTX600N04T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Gate charge: 590nC
Reverse recovery time: 100ns
On-state resistance: 1.5mΩ
Power dissipation: 1.25kW
Produkt ist nicht verfügbar
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IXTP460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTP460P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTA260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1
IXTA260N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA260N055T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC815820&compId=IXTA260N055T2-7.pdf?ci_sign=20af502dc1bd984d39825892a1d6786d67df0a27
IXTA260N055T2-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTA460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTA460P2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO263
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
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IXTT360N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5
IXTT360N055T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 78ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTR32P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E5C3336AD18BF&compId=IXTR32P60P.pdf?ci_sign=eed072ed973f6a65dd9ee646ce6abdf7069fea33
IXTR32P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -18A
Power dissipation: 310W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
Produkt ist nicht verfügbar
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IXTN32P60P pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f
IXTN32P60P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Pulsed drain current: -96A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Gate charge: 196nC
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXTT10P60 pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc
IXTT10P60
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO268; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -10A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
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IXTX32P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E5766289BB8BF&compId=IXT_32P60P.pdf?ci_sign=e2aa7b6252b406ed32c74c9a7a20c4aba482499f
IXTX32P60P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
Produkt ist nicht verfügbar
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IXFR80N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC611820&compId=IXFR80N50Q3.pdf?ci_sign=196a018cdeecf0092ac54030991190e895b55b65
IXFR80N50Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.01 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH60N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A860C1049498BF&compId=IXF_60N50P3.pdf?ci_sign=e076b3a745c1d0793acafb7d1dc93009289b7b73
IXFH60N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.08 EUR
8+9.18 EUR
9+8.68 EUR
30+8.38 EUR
Mindestbestellmenge: 7
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MCC26-12io8B pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC26-12io8B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 0.44kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.71 EUR
Mindestbestellmenge: 3
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MCC95-18io1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D66AD9C64BE27&compId=MCC95-18IO1B-DTE.pdf?ci_sign=76aa368a76aabe9775dd10afb8da54ce46bf6113 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC95-18io1B
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.72 EUR
Mindestbestellmenge: 2
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IXGH72N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA8AE8E972D820&compId=IXGH72N60C3.pdf?ci_sign=e7439d07a94ee0168475277f41a96e4f84faad59
IXGH72N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 62ns
Turn-off time: 244ns
Gate-emitter voltage: ±20V
Collector current: 72A
Pulsed collector current: 360A
Produkt ist nicht verfügbar
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CS20-22MOF1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BDD65D23F377CA18&compId=CS20-22moF1.pdf?ci_sign=b0af0cfe7ddc5a60264d816efdb90ab3d73413df
CS20-22MOF1
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Type of thyristor: thyristor
Gate current: 250mA
Load current: 18A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
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DSDI60-16A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433
DSDI60-16A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.07 EUR
10+11.8 EUR
Mindestbestellmenge: 6
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IXFB210N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39CBF820&compId=IXFB210N20P.pdf?ci_sign=45107975032c44e04f2a5e02350874bd4d821178
IXFB210N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Drain-source voltage: 200V
Drain current: 210A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 10.5mΩ
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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LDA201 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ABDD895F701EC&compId=LDA201.pdf?ci_sign=ea9bc7977b0278912611a4bb6621e7b18e8942eb
LDA201
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 3.75kV; Uce: 30V
Collector-emitter voltage: 30V
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
104+0.69 EUR
Mindestbestellmenge: 104
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IXTH04N300P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917AF820&compId=IXTH04N300P3HV.pdf?ci_sign=462da40c2776e8330cfe3a15d83a604a60b6a8ac
IXTH04N300P3HV
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247HV
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 13nC
Reverse recovery time: 1.1µs
Drain current: 0.4A
Power dissipation: 104W
On-state resistance: 190Ω
Drain-source voltage: 3kV
Kind of package: tube
Produkt ist nicht verfügbar
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IXTQ52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTQ52P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO3P
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.68 EUR
12+5.98 EUR
13+5.65 EUR
120+5.58 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTA52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTA52P10P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.25 EUR
12+5.98 EUR
13+5.65 EUR
50+5.43 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTH52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTH52P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO247-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.47 EUR
11+6.75 EUR
12+6.38 EUR
120+6.19 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXTK170P10P pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794BF4713B18748&compId=IXTK170P10P.pdf?ci_sign=f70b69b80f9b410a7c33f367002501ddeb7e430b
IXTK170P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: TO264
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IXTT90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108
IXTT90P10P
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 462W
Case: TO268
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTN170P10P pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A3DD0CC20748&compId=IXTN170P10P.pdf?ci_sign=836eb5a6f8f0b2903a734fc7c94f64d2235ce61f
IXTN170P10P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -510A
Drain current: -170A
Drain-source voltage: -100V
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Power dissipation: 890W
Gate-source voltage: ±30V
Technology: PolarP™
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTP52P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO220AB
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTR170P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA056E66DE518BF&compId=IXTR170P10P.pdf?ci_sign=d1b7e100a10ee5eb6bd8252f488ba0934cedb550
IXTR170P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -100A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 15.4mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 312W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTR90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA06CD750E378BF&compId=IXTR90P10P.pdf?ci_sign=d99e0f8c856a9cad4c5296bc1863b57210e9c675
IXTR90P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -57A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 27mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 190W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IXTX170P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA046B882FB78BF&compId=IXTX170P10P.pdf?ci_sign=94cd33348f2095bd4b19ade6fc8944ee1e626f80
IXTX170P10P
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -170A; 890W; 176ns
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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MDD26-14N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E035B7BAA55E28&compId=MDD26-14N1B-DTE.pdf?ci_sign=73f19312f31197fce47f8065185a9389bf591bc4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDD26-14N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.55 EUR
Mindestbestellmenge: 3
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MDD26-16N1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25D3853BA55EA&compId=MDD26-16N1B.pdf?ci_sign=e20b9a9d35d6193d30eaf696fc93a921c9ea7b87 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDD26-16N1B
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.63 EUR
5+25.61 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MDD255-12N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E0130FD95C5E28&compId=MDD255-xxN1-DTE.pdf?ci_sign=f51e90d71cc41ee788c961880317ff1f84e4c330 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b
MDD255-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 270A x2
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-20N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b
MDD255-20N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Produkt ist nicht verfügbar
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MDD255-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b
MDD255-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Produkt ist nicht verfügbar
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MDD26-08N1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82BE1B1D26A0C4&compId=MDD26-08N1B.pdf?ci_sign=96b683119e863b8b953690dcd665e1cb9aab78af pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
Produkt ist nicht verfügbar
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MDD200-22N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E12DCDB379DE28&compId=MDD200-22N1-DTE.pdf?ci_sign=2cca8bdbfad489fe0eda61f2b7a2d0ecd141324f pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 350A
Produkt ist nicht verfügbar
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MDD255-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB839513945740C4&compId=MDD255-18N1.pdf?ci_sign=eb96324925779c867abbd73095ef58ecdb1b7ff9
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD26-18N1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F12F916A40C4&compId=MDD26-18N1B.pdf?ci_sign=5b0fd26e9fde221b69763aebbdf4e2b1e654d674 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 0.65kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB836BB6A54FE0C4&compId=MDD200-14N1.pdf?ci_sign=9c65bcb969b3e3e3a5895718e104f59faa6fc667 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD200-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E081E3E28A7E28&compId=MDD200-16N1-DTE.pdf?ci_sign=8dda3721dbf88572c903346fd69369515b29a002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 350A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD200-18N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8373F35902A0C4&compId=MDD200-18N1.pdf?ci_sign=4e6c82549feffa3540f48d23c8a1f65b2fbd7448 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-14N1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8385D4534420C4&compId=MDD255-14N1.pdf?ci_sign=c6912c83be853c9131059a2e7874710509b6316e
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MDD255-22N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E087206952DE28&compId=MDD255-xxN1-DTE.pdf?ci_sign=2b031cdd2badb0377ef5612913bd0d3537e4fe5b
MDD255-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Produkt ist nicht verfügbar
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IXFK48N60Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D50AFCE6D67820&compId=IXFK(X)48N60Q3.pdf?ci_sign=88d6698196cd71ddff7d54284cef316093b06013
IXFK48N60Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFH48N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 163ns
Produkt ist nicht verfügbar
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