| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTH80N20L | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 80A Power dissipation: 520W Case: TO247-3 On-state resistance: 32mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT80N20L | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 80A Power dissipation: 520W Case: TO268 On-state resistance: 32mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTX240N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 240A Power dissipation: 960W Case: PLUS247™ On-state resistance: 7mΩ Mounting: THT Gate charge: 546nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 206ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK240N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 240A Power dissipation: 960W Case: TO264 On-state resistance: 7mΩ Mounting: THT Gate charge: 546nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 206ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTT140N075L2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO268HV On-state resistance: 11mΩ Mounting: SMD Gate charge: 275nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA230N04T4 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 340W Case: TO263 On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 32ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP230N04T4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 340W Case: TO220AB On-state resistance: 2.9mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 32ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP230N04T4M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 40W Case: TO220FP On-state resistance: 2.9mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 32ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP24P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -24A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 40ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK20N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 20A Power dissipation: 1.25kW Case: TO264 On-state resistance: 1Ω Mounting: THT Gate charge: 215nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.1µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LAA710 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 60V AC; max. 60V DC Mounting: THT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Turn-on time: 2.5ms Case: DIP8 Max. operating current: 1A Turn-off time: 0.25ms Control current max.: 50mA On-state resistance: 0.5Ω Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LBA716S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Switched voltage: max. 60V AC; max. 60V DC Mounting: SMT Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Max. operating current: 1A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 0.4Ω Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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LBA716 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Switched voltage: max. 60V AC; max. 60V DC Mounting: THT Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Max. operating current: 1A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 0.4Ω Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MG1775S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 75A Case: Y4-M5 Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXBF20N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Power dissipation: 150W Case: ISOPLUS i4-pac™ x024c Mounting: THT Gate charge: 105nC Kind of package: tube Collector-emitter voltage: 3kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Pulsed collector current: 130A Turn-on time: 64ns Turn-off time: 0.3µs Gate-emitter voltage: ±20V Collector current: 34A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXBF20N360 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W Type of transistor: IGBT Power dissipation: 230W Case: ISOPLUS i4-pac™ x024c Mounting: THT Gate charge: 110nC Kind of package: tube Collector-emitter voltage: 3.6kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Pulsed collector current: 220A Gate-emitter voltage: ±20V Collector current: 20A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CPC1590P | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: Flatpack 8pin Number of channels: 1 Mounting: SMD Operating temperature: -40...110°C Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| CPC1590PTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: Flatpack 8pin Number of channels: 1 Mounting: SMD Operating temperature: -40...110°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CPC1593G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1593GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CPC1593GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MDA72-16N1B | IXYS |
Category: Diode modules Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA Case: TO240AA Semiconductor structure: common anode; double Kind of package: bulk Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 113A x2 Max. forward impulse current: 1.54kA Max. forward voltage: 1.6V |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| LCB110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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DSEC30-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 110A Case: TO247-3 Kind of package: tube Max. forward voltage: 1.57V Power dissipation: 95W Reverse recovery time: 35ns Technology: HiPerFRED™ |
auf Bestellung 271 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEC30-06B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 110A Case: TO247-3 Kind of package: tube Max. forward voltage: 2.03V Power dissipation: 95W Reverse recovery time: 35ns Technology: HiPerFRED™ |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH12N70X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 270ns Power dissipation: 180W Gate charge: 19nC Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSA70C200HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 35A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.79V Max. forward impulse current: 0.55kA Power dissipation: 215W Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXBT10N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268 Type of transistor: IGBT Technology: BiMOSFET™ Power dissipation: 140W Case: TO268 Mounting: SMD Gate charge: 30nC Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Pulsed collector current: 40A Turn-on time: 63ns Turn-off time: 1.8µs Gate-emitter voltage: ±20V Collector current: 10A |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IX4427NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
auf Bestellung 1443 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IX4427NE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC8 Output current: 1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...30V Kind of output: non-inverting Impulse rise time: 10ns Integrated circuit features: MOSFET Pulse fall time: 8ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IX4427NETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V Type of integrated circuit: driver Kind of integrated circuit: low-side Case: SOIC8 Output current: 1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...30V Kind of output: non-inverting Impulse rise time: 10ns Integrated circuit features: MOSFET Pulse fall time: 8ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFR230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™ Drain-source voltage: 200V Drain current: 156A Case: ISOPLUS247™ Polarisation: unipolar On-state resistance: 8mΩ Power dissipation: 600W Kind of channel: enhancement Gate charge: 358nC Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ130N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Drain-source voltage: 200V Drain current: 75A Case: TO3P Polarisation: unipolar On-state resistance: 16mΩ Pulsed drain current: 320A Power dissipation: 830W Technology: Trench™ Kind of channel: enhancement Gate charge: 150nC Reverse recovery time: 150ns Gate-source voltage: ±20V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN230N20T | IXYS |
Category: Transistor modules Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 220A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 7.5mΩ Pulsed drain current: 630A Power dissipation: 1090W Technology: GigaMOS™ Kind of channel: enhancement Gate charge: 358nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA32N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 32A Power dissipation: 200W Case: TO263 On-state resistance: 78mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 110ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC5603CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Drain current: 0.13A Kind of channel: depletion Drain-source voltage: 415V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 14Ω |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXBOD1-21R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.1kV; bulk Mounting: THT Breakover voltage: 2.1kV Max. load current: 0.9A Kind of package: bulk Case: BOD Type of thyristor: BOD x3 |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYH40N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Kind of package: tube Turn-off time: 206ns Gate charge: 70nC Turn-on time: 65ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VBO40-08NO6 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 320A Max. off-state voltage: 0.8kV Load current: 40A Max. forward impulse current: 0.32kA Case: SOT227B Version: module Mechanical mounting: screw Leads: M4 screws Electrical mounting: screw Type of bridge rectifier: single-phase |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK52N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhancement Gate charge: 245nC Features of semiconductor devices: ultra junction x-class Kind of package: tube Reverse recovery time: 260ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN52N100X | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Gate charge: 245nC Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 260ns Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFX52N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: N Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO247-3 Gate-source voltage: 30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhancement Gate charge: 245nC Application: automotive industry Reverse recovery time: 260ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXTA100N04T2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 40V; 100A; 150W; D2PAK,TO263; 34ns Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 25.5nC Kind of channel: enhancement Reverse recovery time: 34ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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LF2388BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Mounting: SMD Topology: IGBT three-phase bridge; MOSFET three-phase bridge Supply voltage: 10...20V Output current: -750...420mA Type of integrated circuit: driver Operating temperature: -40...125°C Voltage class: 600V Kind of package: reel; tape Case: SO20 Kind of integrated circuit: gate driver; high-/low-side Number of channels: 6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXBOD1-18R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x2; 1.25A; BOD; THT; 1.8kV; bulk Mounting: THT Breakover voltage: 1.8kV Max. load current: 1.25A Kind of package: bulk Case: BOD Type of thyristor: BOD x2 |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MCC200-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 196A x2 Case: Y4-M6 Max. forward voltage: 1.2V Max. forward impulse current: 8.6kA Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IXTQ64N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 64A Power dissipation: 400W Case: TO3P Gate-source voltage: ±20V On-state resistance: 49mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXBH14N300HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV Collector-emitter voltage: 3kV Power dissipation: 200W Gate charge: 62nC Pulsed collector current: 120A Type of transistor: IGBT Kind of package: tube Case: TO247HV Gate-emitter voltage: ±20V Collector current: 38A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
PS1201 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase Operating temperature: -40...85°C Insulation voltage: 3.75kV Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Switched voltage: max. 400V AC Case: SIP4 Max. operating current: 1A Control current max.: 100mA |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXYL60N450 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™ Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 38A Power dissipation: 417W Case: ISOPLUS i5-pac™ Gate-emitter voltage: ±20V Pulsed collector current: 680A Mounting: THT Gate charge: 366nC Kind of package: tube Turn-on time: 724ns Turn-off time: 1.58µs Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
IXTT360N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 360A Power dissipation: 935W Case: TO268 On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 78ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
IXTH360N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 360A Power dissipation: 935W Case: TO247-3 On-state resistance: 2.4mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 78ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MCD162-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
MCC162-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V Max. forward impulse current: 5.1kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: screw Load current: 181A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
MCC162-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V Max. forward impulse current: 6.48kA Gate current: 150/200mA Max. forward voltage: 1.25V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 181A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MCD162-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCD162-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCD162-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
MCC162-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V Max. forward impulse current: 6.48kA Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 181A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTL2x180N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns Type of transistor: N-MOSFET Technology: Trench Drain-source voltage: 100V Drain current: 100A Power dissipation: 150W Gate-source voltage: 20V On-state resistance: 9mΩ Mounting: THT Kind of channel: enhancement Reverse recovery time: 60ns Gate charge: 151nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTH80N20L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT80N20L |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO268; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 80A
Power dissipation: 520W
Case: TO268
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTX240N075L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK240N075L2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; TO264; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: TO264
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTT140N075L2HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA230N04T4 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP230N04T4 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP230N04T4M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 32ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTP24P085T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK20N150 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 20A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1Ω
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 20A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1Ω
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LAA710 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 0.25ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| LBA716S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| LBA716 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 60V AC; max. 60V DC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Max. operating current: 1A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.4Ω
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| MG1775S-BN4MM |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXBF20N300 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Power dissipation: 150W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 34A
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Power dissipation: 150W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Turn-on time: 64ns
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 34A
Produkt ist nicht verfügbar
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| IXBF20N360 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Power dissipation: 230W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 220A
Gate-emitter voltage: ±20V
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W
Type of transistor: IGBT
Power dissipation: 230W
Case: ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Collector-emitter voltage: 3.6kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 220A
Gate-emitter voltage: ±20V
Collector current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| CPC1590P |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1590PTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC1593G |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1593GS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1593GSTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MDA72-16N1B |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Case: TO240AA
Semiconductor structure: common anode; double
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 113A x2
Max. forward impulse current: 1.54kA
Max. forward voltage: 1.6V
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Case: TO240AA
Semiconductor structure: common anode; double
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 113A x2
Max. forward impulse current: 1.54kA
Max. forward voltage: 1.6V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| LCB110STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| DSEC30-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.57V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.57V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEC30-06B |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.03V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; Ifsm: 110A; TO247-3; tube; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 110A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.03V
Power dissipation: 95W
Reverse recovery time: 35ns
Technology: HiPerFRED™
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH12N70X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Gate charge: 19nC
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 270ns
Power dissipation: 180W
Gate charge: 19nC
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DSA70C200HB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.79V
Max. forward impulse current: 0.55kA
Power dissipation: 215W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 35Ax2; TO247-3; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.79V
Max. forward impulse current: 0.55kA
Power dissipation: 215W
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXBT10N170 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 140W
Case: TO268
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Gate-emitter voltage: ±20V
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 140W
Case: TO268
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Gate-emitter voltage: ±20V
Collector current: 10A
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4427NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 1443 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4427NE |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IX4427NETR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 4.5÷30V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...30V
Kind of output: non-inverting
Impulse rise time: 10ns
Integrated circuit features: MOSFET
Pulse fall time: 8ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IXFR230N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
Case: ISOPLUS247™
Polarisation: unipolar
On-state resistance: 8mΩ
Power dissipation: 600W
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
Case: ISOPLUS247™
Polarisation: unipolar
On-state resistance: 8mΩ
Power dissipation: 600W
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTQ130N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO3P
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO3P
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN230N20T |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 220A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 630A
Power dissipation: 1090W
Technology: GigaMOS™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 220A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 630A
Power dissipation: 1090W
Technology: GigaMOS™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA32N20T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC5603CTR |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 0.13A
Kind of channel: depletion
Drain-source voltage: 415V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 14Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 0.13A
Kind of channel: depletion
Drain-source voltage: 415V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 14Ω
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBOD1-21R |
|
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.1kV; bulk
Mounting: THT
Breakover voltage: 2.1kV
Max. load current: 0.9A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x3
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.1kV; bulk
Mounting: THT
Breakover voltage: 2.1kV
Max. load current: 0.9A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x3
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYH40N65C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 206ns
Gate charge: 70nC
Turn-on time: 65ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Turn-off time: 206ns
Gate charge: 70nC
Turn-on time: 65ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VBO40-08NO6 |
|
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 320A
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.32kA
Case: SOT227B
Version: module
Mechanical mounting: screw
Leads: M4 screws
Electrical mounting: screw
Type of bridge rectifier: single-phase
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 40A; Ifsm: 320A
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 0.32kA
Case: SOT227B
Version: module
Mechanical mounting: screw
Leads: M4 screws
Electrical mounting: screw
Type of bridge rectifier: single-phase
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK52N100X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN52N100X |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX52N100X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Application: automotive industry
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 52A; 1.25kW; TO247-3; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Application: automotive industry
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTA100N04T2-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 100A; 150W; D2PAK,TO263; 34ns
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 25.5nC
Kind of channel: enhancement
Reverse recovery time: 34ns
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 100A; 150W; D2PAK,TO263; 34ns
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 25.5nC
Kind of channel: enhancement
Reverse recovery time: 34ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| LF2388BTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 10...20V
Output current: -750...420mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Kind of package: reel; tape
Case: SO20
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 10...20V
Output current: -750...420mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Kind of package: reel; tape
Case: SO20
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| IXBOD1-18R |
|
Hersteller: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; 1.8kV; bulk
Mounting: THT
Breakover voltage: 1.8kV
Max. load current: 1.25A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x2
Category: Thyristors - others
Description: Thyristor: BOD x2; 1.25A; BOD; THT; 1.8kV; bulk
Mounting: THT
Breakover voltage: 1.8kV
Max. load current: 1.25A
Kind of package: bulk
Case: BOD
Type of thyristor: BOD x2
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| MCC200-16io1 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 196Ax2; Y4-M6; Ufmax: 1.2V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 196A x2
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8.6kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ64N25P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXBH14N300HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 38A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 38A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| PS1201 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYL60N450 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 38A; 417W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 38A
Power dissipation: 417W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 680A
Mounting: THT
Gate charge: 366nC
Kind of package: tube
Turn-on time: 724ns
Turn-off time: 1.58µs
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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| IXTT360N055T2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH360N055T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 78ns
Produkt ist nicht verfügbar
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| MCD162-18io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| MCC162-14io1 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V
Max. forward impulse current: 5.1kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V
Max. forward impulse current: 5.1kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| MCC162-18io1 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.25V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.25V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| MCD162-08io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MCD162-12io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD162-14io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCC162-12io1 |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 181A; Y4-M6; Ufmax: 1.36V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 181A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Produkt ist nicht verfügbar
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| IXTL2x180N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 150W
Gate-source voltage: 20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 60ns
Gate charge: 151nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 100A; 150W; 60ns
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 150W
Gate-source voltage: 20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 60ns
Gate charge: 151nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH