MG17100S-BN4MM IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Anzahl je Verpackung: 1 Stücke
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Technische Details MG17100S-BN4MM IXYS
Description: IGBT MODULE 1700V 150A 620W S3, Packaging: Bulk, Package / Case: S-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: S3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 620 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Weitere Produktangebote MG17100S-BN4MM
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MG17100S-BN4MM | Hersteller : Littelfuse Inc. |
Description: IGBT MODULE 1700V 150A 620W S3 Packaging: Bulk Package / Case: S-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A NTC Thermistor: No Supplier Device Package: S3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 620 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
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MG17100S-BN4MM | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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MG17100S-BN4MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: Y4-M5 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge |
Produkt ist nicht verfügbar |