VMO650-01F IXYS
Hersteller: IXYSDescription: MOSFET N-CH 100V 690A Y3-DCB
Packaging: Bulk
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 6V @ 130mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 379.03 EUR |
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Technische Details VMO650-01F IXYS
Category: Transistor modules MOSFET, Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 100V, Drain current: 690A, Case: Y3-DCB, Electrical mounting: FASTON connectors; screw, Polarisation: unipolar, On-state resistance: 1.8mΩ, Pulsed drain current: 2.78kA, Power dissipation: 2.5kW, Technology: HiPerFET™, Kind of channel: enhancement, Gate charge: 2.3µC, Reverse recovery time: 300ns, Gate-source voltage: ±20V, Features of semiconductor devices: Kelvin terminal, Mechanical mounting: screw.
Weitere Produktangebote VMO650-01F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| VMO650-01F | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 690A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.8mΩ Pulsed drain current: 2.78kA Power dissipation: 2.5kW Technology: HiPerFET™ Kind of channel: enhancement Gate charge: 2.3µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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