MIXA225RF1200TSF IXYS
Hersteller: IXYS
Description: IGBT MOD 1200V 360A 1100W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: PT
Current - Collector (Ic) (Max): 360 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 300 µA
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Technische Details MIXA225RF1200TSF IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor, Mechanical mounting: screw, Case: SimBus F, Electrical mounting: Press-in PCB, Technology: Sonic FRD™; XPT™, Gate-emitter voltage: ±20V, Max. off-state voltage: 1.2kV, Collector current: 250A, Pulsed collector current: 500A, Power dissipation: 1.1kW, Topology: boost chopper; NTC thermistor, Semiconductor structure: diode/transistor, Type of semiconductor module: IGBT.
Weitere Produktangebote MIXA225RF1200TSF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MIXA225RF1200TSF | IXYS |
IGBT Modules XPT IGBT Module |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MIXA225RF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 250A Pulsed collector current: 500A Power dissipation: 1.1kW Topology: boost chopper; NTC thermistor Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MIXA225RF1200TSF |
|
Hersteller: IXYS
IGBT Modules XPT IGBT Module
IGBT Modules XPT IGBT Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MIXA225RF1200TSF |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH