Technische Details MG12150S-BN2MM Littelfuse
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: Y4-M5, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Technology: Field Stop; Trench, Mechanical mounting: screw.
Weitere Produktangebote MG12150S-BN2MM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MG12150S-BN2MM | Hersteller : Littelfuse Inc. |
 Description: IGBT MODULE 1200V 200A 625W S3 |
auf Bestellung 62 Stücke: Lieferzeit 10-14 Tag (e) |
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MG12150S-BN2MM | Hersteller : Littelfuse |
Trans IGBT Module N-CH 1200V 200A 625000mW 7-Pin Bulk |
Produkt ist nicht verfügbar |
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| MG12150S-BN2MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 150A Case: Y4-M5 Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |