MG12150S-BN2MM Littelfuse Inc.
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details MG12150S-BN2MM Littelfuse Inc.
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: Field Stop; Trench, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Case: Y4-M5, Anzahl je Verpackung: 1 Stücke.
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Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: Y4-M5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MG12150S-BN2MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: Y4-M5 |
Produkt ist nicht verfügbar |