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IXGN400N60A3 IXGN400N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGN400N60B3 IXGN400N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGK400N30A3 IXGK400N30A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
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MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
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MIXG240W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240W1200PZTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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DLA60I1200HA DLA60I1200HA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEF25888C80A143&compId=DLA60I1200HA.pdf?ci_sign=6c4e6c7f1ad2792832ca08e41adebd5c5675cf1b Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Kind of package: tube
Case: TO247-2
Semiconductor structure: single diode
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 60A
Max. forward impulse current: 850A
Power dissipation: 500W
Max. off-state voltage: 1.2kV
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.99 EUR
12+6.18 EUR
13+5.65 EUR
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CLA60MT1200NTZ CLA60MT1200NTZ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF9707D68B38BF&compId=CLA60MT1200NTZ.pdf?ci_sign=42d4db417915f82ec33b9b145dcc3e64a3365bd9 Category: Triacs
Description: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: D3PAK
Mounting: SMD
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
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1+71.5 EUR
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CPC3710CTR CPC3710CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.22A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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VBE26-06NO7 VBE26-06NO7 IXYS mc784.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 44A; Ifsm: 95A; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 44A
Max. forward impulse current: 95A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
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DSEI2X161-12P DSEI2X161-12P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E1ED4FFB35C0C4&compId=DSEI2X161-12P.pdf?ci_sign=343cf9432e0aec3e86e49b58542713c49e266df3 Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.9V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
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2+50.91 EUR
10+49.55 EUR
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VBO78-16NO7 VBO78-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87803F5EBF49C0C4&compId=VBO78-16NO7.pdf?ci_sign=b964677d327b9c0e5ec3bc7faf326e2b7b5c4285 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 80A; Ifsm: 750A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 750A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
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3+26.77 EUR
10+24.02 EUR
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MDMA60B1600MB IXYS Category: Diode modules
Description: Module: diode; 1.6kV; 60A; ECO-PAC 1; THT; screw
Max. off-state voltage: 1.6kV
Load current: 60A
Electrical mounting: THT
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: diode
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MMO140-16IO7 IXYS MMO140%2C%20MLO140.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Max. off-state voltage: 1.6kV
Load current: 58A
Max. forward impulse current: 1.15kA
Electrical mounting: THT
Max. forward voltage: 1.75V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
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MMO175-16IO7 IXYS MMO175%2CMLO175.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 1.5kA
Electrical mounting: THT
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
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MMO230-16IO7 IXYS MMO230,%20MLO230.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Max. off-state voltage: 1.6kV
Load current: 105A
Max. forward impulse current: 2.25kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Leads: wire Ø 0.75mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 150/200mA
Kind of package: bulk
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DSEI2x161-02P DSEI2x161-02P IXYS media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
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VCO180-16io7 IXYS media?resourcetype=datasheets&itemid=37D7082B-154B-4541-8F4D-CA2A0A0EB94E&filename=Littelfuse-Power-Semiconductors-VCO180-Datasheet Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 180A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 180A
Electrical mounting: THT
Max. forward voltage: 1.1V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
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VCO132-16io7 IXYS media?resourcetype=datasheets&itemid=4A4823B7-9DA2-42A8-AB21-7595BE04F574&filename=Littelfuse-Power-Semiconductors-VCO132-Datasheet Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 130A
Electrical mounting: THT
Max. forward voltage: 1.3V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
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MKI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MKI75-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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IXFK520N075T2 IXFK520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 296 Stücke:
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5+14.54 EUR
Mindestbestellmenge: 5
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IXFX520N075T2 IXFX520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.28V
Load current: 10A
Power dissipation: 60W
Max. forward impulse current: 130A
Max. off-state voltage: 0.4kV
auf Bestellung 18 Stücke:
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11+6.64 EUR
12+5.96 EUR
14+5.28 EUR
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DPG10I400PA DPG10I400PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.03V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
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35+2.09 EUR
40+1.8 EUR
47+1.54 EUR
50+1.44 EUR
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DPG10I200PM DPG10I200PM IXYS DPG10I200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
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35+2.07 EUR
56+1.27 EUR
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DPG10I400PM DPG10I400PM IXYS DPG10I400PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.32V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
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22+3.3 EUR
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DPG10I200PA DPG10I200PA IXYS media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
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38+1.9 EUR
44+1.63 EUR
51+1.42 EUR
100+1.32 EUR
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IXDN614YI IXDN614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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13+5.56 EUR
17+4.33 EUR
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IXDN614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXGT25N160 IXGT25N160 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXSH80N120L2KHV IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
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IXFN340N07 IXFN340N07 IXYS pVersion=0046&contRep=ZT&docId=E2920386B7F856F19A99005056AB752F&compId=98547.pdf?ci_sign=105d98d49cea6a7db7877e066e9a5c3dc470e269 Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; screw; Idm: 1.36kA
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 0.49µC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 200ns
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFT340N075T2 IXFT340N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
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IXFH340N075T2 IXFH340N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
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IXTH340N04T4 IXTH340N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA340N04T4 IXTA340N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA340N04T4-7 IXTA340N04T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP340N04T4 IXTP340N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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MMIX1X340N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA78862F0E7820&compId=MMIX1X340N65B4.pdf?ci_sign=d2491b7f4fdece1fa3ddaa0a18602d4894132816 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Type of transistor: IGBT
Power dissipation: 1.2kW
Case: SMPD
Mounting: SMD
Gate charge: 553nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 295A
Collector-emitter voltage: 650V
Pulsed collector current: 1.2kA
Technology: BiMOSFET™; GenX3™; XPT™
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IXFH320N10T2 IXFH320N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFT320N10T2 IXFT320N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC669820&compId=IXFT320N10T2.pdf?ci_sign=01df806445c3914f7627f006ec4695a8a5f161d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Topology: IGBT half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
Application: fans; for pump; for UPS; motors
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: SimBus F
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
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MIXA225RF1200TSF IXYS MIXA225RF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: SimBus F
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
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DCG45X1200NA DCG45X1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA99594E6C1A940C7&compId=DCG45X1200NA.pdf?ci_sign=1c51b557c6e26ea3de51342637ecca197c93d6b6 Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 22Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 22A x2
Case: SOT227B
Max. forward voltage: 2.2V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
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MG1750S-BN4MM IXYS media?resourcetype=datasheets&itemid=974f4440-f0a9-4745-b140-b9e5ed96929a&filename=littelfuse_power_semiconductor_igbt_module_mg1750s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 50A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12150S-BN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150s_bn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12200D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG17100S-BN4MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG1775S-BN4MM IXYS littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf?assetguid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12100S-BN2MM IXYS media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXTP230N04T4 IXTP230N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXFH12N80P IXFH12N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC08D820&compId=IXFH12N80P.pdf?ci_sign=32fa00e40775d7a5a0c15f13c6146816f2d2bc5b Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
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IXTA230N04T4 IXTA230N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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DSEP29-06A DSEP29-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82786FD2576143&compId=DSEP29-06A.pdf?ci_sign=82b5f05dc3fbb9ce8d39aa34aa78df78ee791b35 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
auf Bestellung 257 Stücke:
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15+5.11 EUR
24+3.09 EUR
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DSEP29-06B DSEP29-06B IXYS Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 25ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.52V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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17+4.29 EUR
23+3.16 EUR
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IXFH34N50P3 IXFH34N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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7+11.8 EUR
10+9.72 EUR
30+7.42 EUR
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CPC1718J CPC1718J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49316DB8320C7&compId=CPC1718.pdf?ci_sign=bfe670bb7367963f0d1f7cc03edd903cea5b35fc Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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IXGN400N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627
IXGN400N60A3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGN400N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6
IXGN400N60B3
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGK400N30A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c
IXGK400N30A3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
Produkt ist nicht verfügbar
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MIXG240RF1200PTED
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
Produkt ist nicht verfügbar
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MIXG240W1200PTEH
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
Produkt ist nicht verfügbar
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MIXG240W1200PZTEH pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
Produkt ist nicht verfügbar
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MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
Produkt ist nicht verfügbar
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DLA60I1200HA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEF25888C80A143&compId=DLA60I1200HA.pdf?ci_sign=6c4e6c7f1ad2792832ca08e41adebd5c5675cf1b
DLA60I1200HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Kind of package: tube
Case: TO247-2
Semiconductor structure: single diode
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 60A
Max. forward impulse current: 850A
Power dissipation: 500W
Max. off-state voltage: 1.2kV
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.99 EUR
12+6.18 EUR
13+5.65 EUR
Mindestbestellmenge: 11
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CLA60MT1200NTZ pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF9707D68B38BF&compId=CLA60MT1200NTZ.pdf?ci_sign=42d4db417915f82ec33b9b145dcc3e64a3365bd9
CLA60MT1200NTZ
Hersteller: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: D3PAK
Mounting: SMD
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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CPC3710CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee
CPC3710CTR
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.22A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Produkt ist nicht verfügbar
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VBE26-06NO7 mc784.pdf
VBE26-06NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 44A; Ifsm: 95A; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 44A
Max. forward impulse current: 95A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
Produkt ist nicht verfügbar
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DSEI2X161-12P pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E1ED4FFB35C0C4&compId=DSEI2X161-12P.pdf?ci_sign=343cf9432e0aec3e86e49b58542713c49e266df3
DSEI2X161-12P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.9V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+50.91 EUR
10+49.55 EUR
Mindestbestellmenge: 2
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VBO78-16NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87803F5EBF49C0C4&compId=VBO78-16NO7.pdf?ci_sign=b964677d327b9c0e5ec3bc7faf326e2b7b5c4285
VBO78-16NO7
Hersteller: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 80A; Ifsm: 750A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 750A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.77 EUR
10+24.02 EUR
Mindestbestellmenge: 3
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MDMA60B1600MB
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; 1.6kV; 60A; ECO-PAC 1; THT; screw
Max. off-state voltage: 1.6kV
Load current: 60A
Electrical mounting: THT
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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MMO140-16IO7 MMO140%2C%20MLO140.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Max. off-state voltage: 1.6kV
Load current: 58A
Max. forward impulse current: 1.15kA
Electrical mounting: THT
Max. forward voltage: 1.75V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
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MMO175-16IO7 MMO175%2CMLO175.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 1.5kA
Electrical mounting: THT
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
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MMO230-16IO7 MMO230,%20MLO230.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Max. off-state voltage: 1.6kV
Load current: 105A
Max. forward impulse current: 2.25kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Leads: wire Ø 0.75mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 150/200mA
Kind of package: bulk
Produkt ist nicht verfügbar
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DSEI2x161-02P media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf
DSEI2x161-02P
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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VCO180-16io7 media?resourcetype=datasheets&itemid=37D7082B-154B-4541-8F4D-CA2A0A0EB94E&filename=Littelfuse-Power-Semiconductors-VCO180-Datasheet
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 180A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 180A
Electrical mounting: THT
Max. forward voltage: 1.1V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
Produkt ist nicht verfügbar
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VCO132-16io7 media?resourcetype=datasheets&itemid=4A4823B7-9DA2-42A8-AB21-7595BE04F574&filename=Littelfuse-Power-Semiconductors-VCO132-Datasheet
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 130A
Electrical mounting: THT
Max. forward voltage: 1.3V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
Produkt ist nicht verfügbar
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MKI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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MWI75-06A7T
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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MKI75-06A7
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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IXFK520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23
IXFK520N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.54 EUR
Mindestbestellmenge: 5
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IXFX520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23
IXFX520N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.28V
Load current: 10A
Power dissipation: 60W
Max. forward impulse current: 130A
Max. off-state voltage: 0.4kV
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.64 EUR
12+5.96 EUR
14+5.28 EUR
Mindestbestellmenge: 11
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DPG10I400PA pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840
DPG10I400PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.03V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
40+1.8 EUR
47+1.54 EUR
50+1.44 EUR
Mindestbestellmenge: 35
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DPG10I200PM DPG10I200PM.pdf
DPG10I200PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
56+1.27 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
DPG10I400PM DPG10I400PM.pdf
DPG10I400PM
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.32V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DPG10I200PA media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet
DPG10I200PA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
44+1.63 EUR
51+1.42 EUR
100+1.32 EUR
Mindestbestellmenge: 38
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IXDN614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.56 EUR
17+4.33 EUR
Mindestbestellmenge: 13
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IXDN614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Produkt ist nicht verfügbar
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IXGT25N160 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f
IXGT25N160
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
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IXSH80N120L2KHV pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN340N07 pVersion=0046&contRep=ZT&docId=E2920386B7F856F19A99005056AB752F&compId=98547.pdf?ci_sign=105d98d49cea6a7db7877e066e9a5c3dc470e269
IXFN340N07
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; screw; Idm: 1.36kA
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 0.49µC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 200ns
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFT340N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1
IXFT340N075T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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IXFH340N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1
IXFH340N075T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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IXTH340N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf
IXTH340N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA340N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f
IXTA340N04T4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA340N04T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f
IXTA340N04T4-7
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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IXTP340N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf
IXTP340N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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MMIX1X340N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA78862F0E7820&compId=MMIX1X340N65B4.pdf?ci_sign=d2491b7f4fdece1fa3ddaa0a18602d4894132816
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Type of transistor: IGBT
Power dissipation: 1.2kW
Case: SMPD
Mounting: SMD
Gate charge: 553nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 295A
Collector-emitter voltage: 650V
Pulsed collector current: 1.2kA
Technology: BiMOSFET™; GenX3™; XPT™
Produkt ist nicht verfügbar
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IXFH320N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110
IXFH320N10T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
Produkt ist nicht verfügbar
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IXFT320N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC669820&compId=IXFT320N10T2.pdf?ci_sign=01df806445c3914f7627f006ec4695a8a5f161d0
IXFT320N10T2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
Produkt ist nicht verfügbar
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MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Topology: IGBT half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
Application: fans; for pump; for UPS; motors
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: SimBus F
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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MIXA225RF1200TSF MIXA225RF1200TSF.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: SimBus F
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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DCG45X1200NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA99594E6C1A940C7&compId=DCG45X1200NA.pdf?ci_sign=1c51b557c6e26ea3de51342637ecca197c93d6b6
DCG45X1200NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 22Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 22A x2
Case: SOT227B
Max. forward voltage: 2.2V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Produkt ist nicht verfügbar
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MG1750S-BN4MM media?resourcetype=datasheets&itemid=974f4440-f0a9-4745-b140-b9e5ed96929a&filename=littelfuse_power_semiconductor_igbt_module_mg1750s_bn4mm_datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 50A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MG12150S-BN2MM littelfuse_power_semiconductor_igbt_module_mg12150s_bn2mm_datasheet.pdf.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MG12200D-BN2MM
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MG17100S-BN4MM
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MG1775S-BN4MM littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf?assetguid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MG12100S-BN2MM media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IXTP230N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066
IXTP230N04T4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
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IXFH12N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC08D820&compId=IXFH12N80P.pdf?ci_sign=32fa00e40775d7a5a0c15f13c6146816f2d2bc5b
IXFH12N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
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IXTA230N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066
IXTA230N04T4
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
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DSEP29-06A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82786FD2576143&compId=DSEP29-06A.pdf?ci_sign=82b5f05dc3fbb9ce8d39aa34aa78df78ee791b35
DSEP29-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
24+3.09 EUR
Mindestbestellmenge: 15
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DSEP29-06B Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920
DSEP29-06B
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 25ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.52V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.29 EUR
23+3.16 EUR
Mindestbestellmenge: 17
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IXFH34N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499
IXFH34N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.8 EUR
10+9.72 EUR
30+7.42 EUR
Mindestbestellmenge: 7
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CPC1718J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49316DB8320C7&compId=CPC1718.pdf?ci_sign=bfe670bb7367963f0d1f7cc03edd903cea5b35fc
CPC1718J
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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