| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DPG30C300HB | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 15Ax2; Ifsm: 240A; TO247-3; tube; 90W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 0.24kA Case: TO247-3 Kind of package: tube Max. forward voltage: 1.25V Power dissipation: 90W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DPG10I200PM | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10A; Ifsm: 140A; TO220FP-2; tube; 35W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 140A Case: TO220FP-2 Kind of package: tube Max. forward voltage: 1.27V Power dissipation: 35W Reverse recovery time: 35ns Technology: HiPerFRED™ 2nd Gen |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PLA190S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 0.5ms Operating temperature: -40...85°C |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PLA190STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 0.5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFT36N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 93nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMA90U1800LB-TUB | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A Max. forward voltage: 1.26V Max. off-state voltage: 1.8kV Electrical mounting: SMT Load current: 90A Case: SMPD Type of bridge rectifier: three-phase Max. forward impulse current: 350A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXDD609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Supply voltage: 4.5...35V Operating temperature: -40...125°C Mounting: THT Output current: -9...9A Type of integrated circuit: driver Kind of output: non-inverting Turn-on time: 115ns Kind of package: tube Case: DIP8 Turn-off time: 105ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MCD40-16io6 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 40A; SOT227B; Ufmax: 1.29V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 40A Case: SOT227B Max. forward voltage: 1.29V Max. forward impulse current: 425A Gate current: 100/150mA Electrical mounting: screw Max. load current: 63A Threshold on-voltage: 0.87V Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCD40-12io6 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 40A; SOT227B; Ufmax: 1.29V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 40A Case: SOT227B Max. forward voltage: 1.29V Max. forward impulse current: 425A Gate current: 100/150mA Electrical mounting: screw Max. load current: 63A Threshold on-voltage: 0.87V Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTP2N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Number of channels: 1 Mounting: THT Case: TO220-5 Operating temperature: -40...125°C Kind of package: tube Output current: -30...30A Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns Kind of integrated circuit: gate driver; low-side Supply voltage: 12.5...35V |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDI614CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Number of channels: 1 Mounting: THT Case: TO220-5 Operating temperature: -40...125°C Kind of package: tube Output current: -14...14A Kind of output: inverting Turn-on time: 140ns Turn-off time: 130ns Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN630MCI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Number of channels: 1 Mounting: THT Case: TO220-5 Operating temperature: -40...125°C Kind of package: tube Output current: -30...30A Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns Kind of integrated circuit: gate driver; low-side Supply voltage: 9...35V |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDN630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Number of channels: 1 Mounting: THT Case: TO220-5 Operating temperature: -40...125°C Kind of package: tube Output current: -30...30A Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns Kind of integrated circuit: gate driver; low-side Supply voltage: 12.5...35V |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CMA80PD1600NA | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw Max. off-state voltage: 1.6kV Load current: 80A Semiconductor structure: double series Max. forward impulse current: 1.07kA Kind of package: bulk Max. forward voltage: 1.29V Max. load current: 126A Gate current: 100/200mA Type of semiconductor module: diode-thyristor Mechanical mounting: screw Electrical mounting: screw Threshold on-voltage: 0.86V Case: SOT227B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1302GSTR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 1000-8000%@1mA Collector-emitter voltage: 350V Turn-on time: 1µs Turn-off time: 80µs Slew rate: 0.25V/μs Max. off-state voltage: 5V Trigger current: 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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XAA117S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC Case: DIP8 Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 9.65x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Switched voltage: max. 60V AC; max. 60V DC Max. operating current: 150mA Control current max.: 50mA On-state resistance: 16Ω Type of relay: solid state Manufacturer series: OptoMOS |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN100N65X2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Power dissipation: 595W Gate charge: 183nC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 78A Kind of channel: enhancement Drain-source voltage: 650V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 30mΩ Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX100N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns Mounting: THT Power dissipation: 1.04kW Gate charge: 183nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 100A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 30mΩ Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFT80N65X2HV-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 650V; 80A; Idm: 80A; 890W; D3PAK,TO268; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: D3PAK; TO268 Gate-source voltage: 30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 0.14µC Kind of channel: enhancement Reverse recovery time: 200ns Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LOC211P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16 Case: SO16 Mounting: SMD Kind of output: photodiode Insulation voltage: 3.75kV Type of optocoupler: optocoupler Number of channels: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LOC211PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A Case: SO16 Mounting: SMD Trigger current: 1A Insulation voltage: 3.75kV Type of optocoupler: optocoupler Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MCC162-16IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXFR32N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™ Mounting: THT Power dissipation: 570W Gate charge: 195nC Polarisation: unipolar Drain current: 23A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: ISOPLUS247™ On-state resistance: 0.35Ω |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MDNA210UB2200P-PC | IXYS |
Category: Transistor modules Description: Module; E2-Pack; screw Type of semiconductor module: BJT transistor Mechanical mounting: screw Case: E2-Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MDNA280UB2200P-PC | IXYS |
Category: Transistor modules Description: Module; E2-Pack; screw Type of semiconductor module: BJT transistor Mechanical mounting: screw Case: E2-Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MDNA360UB2200P-PC | IXYS |
Category: Transistor modules Description: Module; E2-Pack; screw Type of semiconductor module: BJT transistor Mechanical mounting: screw Case: E2-Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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LCA712S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 2.5ms Switched voltage: max. 60V AC; max. 60V DC Case: DIP6 Max. operating current: 1A Turn-off time: 350µs Control current max.: 50mA On-state resistance: 0.5Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LCA712STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 2.5ms Switched voltage: max. 60V AC; max. 60V DC Case: DIP6 Max. operating current: 1A Turn-off time: 350µs Control current max.: 50mA On-state resistance: 0.5Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IXFR4N100Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 1kV; 3.5A; 80W; TO247-3; 250ns Mounting: THT Gate-source voltage: 20V Case: TO247-3 On-state resistance: 3Ω Reverse recovery time: 250ns Power dissipation: 80W Gate charge: 39nC Technology: HiPerFET™ Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFK24N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264 Mounting: THT Kind of package: tube Case: TO264 On-state resistance: 440mΩ Power dissipation: 1kW Gate charge: 0.14µC Polarisation: unipolar Drain current: 24A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX24N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™ Mounting: THT Kind of package: tube Case: PLUS247™ On-state resistance: 440mΩ Power dissipation: 1kW Gate charge: 0.14µC Polarisation: unipolar Drain current: 24A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFN74N100X | IXYS |
Category: Transistor modules Description: Module; 1kV; 74A; SOT227B; 1.17kW; HiPerFET™; 290ns; screw Case: SOT227B On-state resistance: 66mΩ Reverse recovery time: 290ns Type of semiconductor module: MOSFET transistor Power dissipation: 1.17kW Technology: HiPerFET™ Drain current: 74A Drain-source voltage: 1kV Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXYP24N100A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1kV; 85A; 375W; TO220-3 Mounting: THT Kind of package: tube Case: TO220-3 Gate-emitter voltage: ±20V Collector current: 85A Collector-emitter voltage: 1kV Power dissipation: 375W Gate charge: 44nC Pulsed collector current: 145A Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYP24N100C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1kV; 76A; 375W; TO220-3 Mounting: THT Kind of package: tube Case: TO220-3 Gate-emitter voltage: ±20V Collector current: 76A Collector-emitter voltage: 1kV Power dissipation: 375W Gate charge: 43nC Pulsed collector current: 132A Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTA1R4N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Mounting: SMD Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 11.8Ω Reverse recovery time: 750ns Pulsed drain current: 3A Power dissipation: 63W Gate charge: 17.8nC Polarisation: unipolar Technology: Polar™ Features of semiconductor devices: standard power mosfet Drain current: 1.4A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP1R4N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Mounting: THT Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 11.8Ω Reverse recovery time: 750ns Pulsed drain current: 3A Power dissipation: 63W Gate charge: 17.8nC Polarisation: unipolar Technology: Polar™ Features of semiconductor devices: standard power mosfet Drain current: 1.4A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY1R4N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Mounting: SMD Gate-source voltage: ±20V Kind of package: tube Case: TO252 On-state resistance: 11.8Ω Reverse recovery time: 750ns Pulsed drain current: 3A Power dissipation: 63W Gate charge: 17.8nC Polarisation: unipolar Technology: Polar™ Features of semiconductor devices: standard power mosfet Drain current: 1.4A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LOC112S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Number of channels: 1 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Trigger current: 1A |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DPG30C300HB |
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Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; Ifsm: 240A; TO247-3; tube; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.24kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.25V
Power dissipation: 90W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; Ifsm: 240A; TO247-3; tube; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.24kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.25V
Power dissipation: 90W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| DPG10I200PM |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; Ifsm: 140A; TO220FP-2; tube; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 140A
Case: TO220FP-2
Kind of package: tube
Max. forward voltage: 1.27V
Power dissipation: 35W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; Ifsm: 140A; TO220FP-2; tube; 35W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 140A
Case: TO220FP-2
Kind of package: tube
Max. forward voltage: 1.27V
Power dissipation: 35W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
| PLA190S |
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Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| PLA190STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXFT36N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of channel: enhancement
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMA90U1800LB-TUB |
|
Hersteller: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Max. forward voltage: 1.26V
Max. off-state voltage: 1.8kV
Electrical mounting: SMT
Load current: 90A
Case: SMPD
Type of bridge rectifier: three-phase
Max. forward impulse current: 350A
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Max. forward voltage: 1.26V
Max. off-state voltage: 1.8kV
Electrical mounting: SMT
Load current: 90A
Case: SMPD
Type of bridge rectifier: three-phase
Max. forward impulse current: 350A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXDD609PI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Supply voltage: 4.5...35V
Operating temperature: -40...125°C
Mounting: THT
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Turn-on time: 115ns
Kind of package: tube
Case: DIP8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Supply voltage: 4.5...35V
Operating temperature: -40...125°C
Mounting: THT
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Turn-on time: 115ns
Kind of package: tube
Case: DIP8
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| MCD40-16io6 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 40A; SOT227B; Ufmax: 1.29V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 425A
Gate current: 100/150mA
Electrical mounting: screw
Max. load current: 63A
Threshold on-voltage: 0.87V
Kind of package: bulk
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 40A; SOT227B; Ufmax: 1.29V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 425A
Gate current: 100/150mA
Electrical mounting: screw
Max. load current: 63A
Threshold on-voltage: 0.87V
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MCD40-12io6 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 40A; SOT227B; Ufmax: 1.29V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 425A
Gate current: 100/150mA
Electrical mounting: screw
Max. load current: 63A
Threshold on-voltage: 0.87V
Kind of package: bulk
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 40A; SOT227B; Ufmax: 1.29V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 425A
Gate current: 100/150mA
Electrical mounting: screw
Max. load current: 63A
Threshold on-voltage: 0.87V
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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| IXTP2N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXDD630CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: TO220-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: -30...30A
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 12.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: TO220-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: -30...30A
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 12.5...35V
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDI614CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: TO220-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: -14...14A
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: TO220-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: -14...14A
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN630MCI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: TO220-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: -30...30A
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 9...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: TO220-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: -30...30A
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 9...35V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDN630CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: TO220-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: -30...30A
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 12.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: TO220-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: -30...30A
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Kind of integrated circuit: gate driver; low-side
Supply voltage: 12.5...35V
auf Bestellung 387 Stücke:
Lieferzeit 14-21 Tag (e)
| CMA80PD1600NA |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Max. off-state voltage: 1.6kV
Load current: 80A
Semiconductor structure: double series
Max. forward impulse current: 1.07kA
Kind of package: bulk
Max. forward voltage: 1.29V
Max. load current: 126A
Gate current: 100/200mA
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Electrical mounting: screw
Threshold on-voltage: 0.86V
Case: SOT227B
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Max. off-state voltage: 1.6kV
Load current: 80A
Semiconductor structure: double series
Max. forward impulse current: 1.07kA
Kind of package: bulk
Max. forward voltage: 1.29V
Max. load current: 126A
Gate current: 100/200mA
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Electrical mounting: screw
Threshold on-voltage: 0.86V
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1302GSTR |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 80µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 80µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XAA117S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Case: DIP8
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 16Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Case: DIP8
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 16Ω
Type of relay: solid state
Manufacturer series: OptoMOS
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN100N65X2 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Power dissipation: 595W
Gate charge: 183nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 78A
Kind of channel: enhancement
Drain-source voltage: 650V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 30mΩ
Reverse recovery time: 200ns
Category: Transistor modules
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Power dissipation: 595W
Gate charge: 183nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 78A
Kind of channel: enhancement
Drain-source voltage: 650V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 30mΩ
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX100N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 183nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 30mΩ
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 183nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 30mΩ
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT80N65X2HV-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 80A; Idm: 80A; 890W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 80A; Idm: 80A; 890W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: D3PAK; TO268
Gate-source voltage: 30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Reverse recovery time: 200ns
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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Stück im Wert von UAH
| LOC211P |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16
Case: SO16
Mounting: SMD
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Number of channels: 2
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16
Case: SO16
Mounting: SMD
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Number of channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LOC211PTR |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A
Case: SO16
Mounting: SMD
Trigger current: 1A
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Number of channels: 2
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A
Case: SO16
Mounting: SMD
Trigger current: 1A
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| MCC162-16IO1B |
|
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR32N100Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Mounting: THT
Power dissipation: 570W
Gate charge: 195nC
Polarisation: unipolar
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Mounting: THT
Power dissipation: 570W
Gate charge: 195nC
Polarisation: unipolar
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 0.35Ω
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| MDNA210UB2200P-PC |
Hersteller: IXYS
Category: Transistor modules
Description: Module; E2-Pack; screw
Type of semiconductor module: BJT transistor
Mechanical mounting: screw
Case: E2-Pack
Category: Transistor modules
Description: Module; E2-Pack; screw
Type of semiconductor module: BJT transistor
Mechanical mounting: screw
Case: E2-Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MDNA280UB2200P-PC |
Hersteller: IXYS
Category: Transistor modules
Description: Module; E2-Pack; screw
Type of semiconductor module: BJT transistor
Mechanical mounting: screw
Case: E2-Pack
Category: Transistor modules
Description: Module; E2-Pack; screw
Type of semiconductor module: BJT transistor
Mechanical mounting: screw
Case: E2-Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MDNA360UB2200P-PC |
Hersteller: IXYS
Category: Transistor modules
Description: Module; E2-Pack; screw
Type of semiconductor module: BJT transistor
Mechanical mounting: screw
Case: E2-Pack
Category: Transistor modules
Description: Module; E2-Pack; screw
Type of semiconductor module: BJT transistor
Mechanical mounting: screw
Case: E2-Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
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Stück im Wert von UAH
| LCA712S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Case: DIP6
Max. operating current: 1A
Turn-off time: 350µs
Control current max.: 50mA
On-state resistance: 0.5Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Case: DIP6
Max. operating current: 1A
Turn-off time: 350µs
Control current max.: 50mA
On-state resistance: 0.5Ω
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| LCA712STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Case: DIP6
Max. operating current: 1A
Turn-off time: 350µs
Control current max.: 50mA
On-state resistance: 0.5Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Case: DIP6
Max. operating current: 1A
Turn-off time: 350µs
Control current max.: 50mA
On-state resistance: 0.5Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IXFR4N100Q |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3.5A; 80W; TO247-3; 250ns
Mounting: THT
Gate-source voltage: 20V
Case: TO247-3
On-state resistance: 3Ω
Reverse recovery time: 250ns
Power dissipation: 80W
Gate charge: 39nC
Technology: HiPerFET™
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1kV; 3.5A; 80W; TO247-3; 250ns
Mounting: THT
Gate-source voltage: 20V
Case: TO247-3
On-state resistance: 3Ω
Reverse recovery time: 250ns
Power dissipation: 80W
Gate charge: 39nC
Technology: HiPerFET™
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFK24N100Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Mounting: THT
Kind of package: tube
Case: TO264
On-state resistance: 440mΩ
Power dissipation: 1kW
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Mounting: THT
Kind of package: tube
Case: TO264
On-state resistance: 440mΩ
Power dissipation: 1kW
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
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| IXFX24N100Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
On-state resistance: 440mΩ
Power dissipation: 1kW
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
On-state resistance: 440mΩ
Power dissipation: 1kW
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXFN74N100X |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; 1kV; 74A; SOT227B; 1.17kW; HiPerFET™; 290ns; screw
Case: SOT227B
On-state resistance: 66mΩ
Reverse recovery time: 290ns
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.17kW
Technology: HiPerFET™
Drain current: 74A
Drain-source voltage: 1kV
Mechanical mounting: screw
Category: Transistor modules
Description: Module; 1kV; 74A; SOT227B; 1.17kW; HiPerFET™; 290ns; screw
Case: SOT227B
On-state resistance: 66mΩ
Reverse recovery time: 290ns
Type of semiconductor module: MOSFET transistor
Power dissipation: 1.17kW
Technology: HiPerFET™
Drain current: 74A
Drain-source voltage: 1kV
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYP24N100A4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 85A; 375W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 85A
Collector-emitter voltage: 1kV
Power dissipation: 375W
Gate charge: 44nC
Pulsed collector current: 145A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 85A; 375W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 85A
Collector-emitter voltage: 1kV
Power dissipation: 375W
Gate charge: 44nC
Pulsed collector current: 145A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYP24N100C4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 76A; 375W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 76A
Collector-emitter voltage: 1kV
Power dissipation: 375W
Gate charge: 43nC
Pulsed collector current: 132A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1kV; 76A; 375W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 76A
Collector-emitter voltage: 1kV
Power dissipation: 375W
Gate charge: 43nC
Pulsed collector current: 132A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTA1R4N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 11.8Ω
Reverse recovery time: 750ns
Pulsed drain current: 3A
Power dissipation: 63W
Gate charge: 17.8nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 11.8Ω
Reverse recovery time: 750ns
Pulsed drain current: 3A
Power dissipation: 63W
Gate charge: 17.8nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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| IXTP1R4N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Mounting: THT
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 11.8Ω
Reverse recovery time: 750ns
Pulsed drain current: 3A
Power dissipation: 63W
Gate charge: 17.8nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Mounting: THT
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 11.8Ω
Reverse recovery time: 750ns
Pulsed drain current: 3A
Power dissipation: 63W
Gate charge: 17.8nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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| IXTY1R4N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: tube
Case: TO252
On-state resistance: 11.8Ω
Reverse recovery time: 750ns
Pulsed drain current: 3A
Power dissipation: 63W
Gate charge: 17.8nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: tube
Case: TO252
On-state resistance: 11.8Ω
Reverse recovery time: 750ns
Pulsed drain current: 3A
Power dissipation: 63W
Gate charge: 17.8nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
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| LOC112S |
|
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Number of channels: 1
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Number of channels: 1
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Trigger current: 1A
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)