IXFK230N20T IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO264
Kind of package: tube
Drain-source voltage: 200V
Drain current: 230A
Gate charge: 358nC
On-state resistance: 7.5mΩ
Power dissipation: 1.67kW
Polarisation: unipolar
| Anzahl | Preis |
|---|---|
| 3+ | 26.64 EUR |
| 5+ | 23.42 EUR |
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Technische Details IXFK230N20T IXYS
Description: MOSFET N-CH 200V 230A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V, Power Dissipation (Max): 1670W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Weitere Produktangebote IXFK230N20T nach Preis ab 26.47 EUR bis 44.18 EUR
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IXFK230N20T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 230A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
auf Bestellung 451 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK230N20T | Hersteller : IXYS |
MOSFETs 230A 200V |
auf Bestellung 825 Stücke: Lieferzeit 10-14 Tag (e) |
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