| Anzahl | Privatkunde |
|---|---|
| 1+ | 63.05 EUR |
| 10+ | 50.48 EUR |
| 100+ | 43.65 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFK230N20T IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264, Type of transistor: N-MOSFET, Polarisation: unipolar, Power dissipation: 1.67kW, Case: TO264, Mounting: THT, Kind of package: tube, Gate charge: 358nC, Features of semiconductor devices: thrench gate power mosfet, Drain current: 230A, Kind of channel: enhancement, Drain-source voltage: 200V, On-state resistance: 7.5mΩ.
Weitere Produktangebote IXFK230N20T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFK230N20T | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.67kW Case: TO264 Mounting: THT Kind of package: tube Gate charge: 358nC Features of semiconductor devices: thrench gate power mosfet Drain current: 230A Kind of channel: enhancement Drain-source voltage: 200V On-state resistance: 7.5mΩ |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFK230N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.67kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
Drain current: 230A
Kind of channel: enhancement
Drain-source voltage: 200V
On-state resistance: 7.5mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.67kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
Drain current: 230A
Kind of channel: enhancement
Drain-source voltage: 200V
On-state resistance: 7.5mΩ
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)