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IXFT400N075T2

IXFT400N075T2 IXYS


media-3320701.pdf Hersteller: IXYS
MOSFET TrenchT2 HiperFETs Power MOSFET
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Technische Details IXFT400N075T2 IXYS

Description: MOSFET N-CH 75V 400A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.

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IXFT400N075T2 IXFT400N075T2 Hersteller : Littelfuse sediscretemosfetsnchanneltrenchgateixf400n075t2datasheet.pdf Trans MOSFET N-CH 75V 400A 3-Pin(2+Tab) D3PAK
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IXFT400N075T2 IXFT400N075T2 Hersteller : IXYS IXFH(T)400N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 400A
Power dissipation: 1kW
Case: TO268
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT400N075T2 IXFT400N075T2 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_400n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 400A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
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IXFT400N075T2 IXFT400N075T2 Hersteller : IXYS IXFH(T)400N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 400A
Power dissipation: 1kW
Case: TO268
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH