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IXFT400N075T2

IXFT400N075T2 IXYS


Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-400N075T2-Datasheet.PDF
Hersteller: IXYS
MOSFETs TrenchT2 HiperFETs Power MOSFET
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Technische Details IXFT400N075T2 IXYS

Description: MOSFET N-CH 75V 400A TO268, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1000W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 400A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA.

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IXFT400N075T2 IXFT400N075T2 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_400n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 400A TO268
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1000W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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