| Anzahl | Privatkunde |
|---|---|
| 1+ | 74.58 EUR |
| 10+ | 63.61 EUR |
| 100+ | 56.88 EUR |
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Technische Details IXFN140N30P IXYS
Category: Transistor drivers, Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A, Case: SOT227B, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: single transistor, Polarisation: unipolar, Kind of channel: enhancement, Gate-source voltage: ±30V, Reverse recovery time: 200ns, Gate charge: 185nC, On-state resistance: 24mΩ, Technology: HiPerFET™; Polar™, Drain current: 110A, Pulsed drain current: 300A, Drain-source voltage: 300V, Power dissipation: 700W, Type of semiconductor module: MOSFET transistor.
Weitere Produktangebote IXFN140N30P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXFN140N30P |
  Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IXFN140N30P | IXYS |
Description: MOSFET N-CH 300V 110A SOT-227B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFN140N30P | IXYS |
Category: Transistor drivers Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 200ns Gate charge: 185nC On-state resistance: 24mΩ Technology: HiPerFET™; Polar™ Drain current: 110A Pulsed drain current: 300A Drain-source voltage: 300V Power dissipation: 700W Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFN140N30P |
|
Hersteller: IXYS
Description: MOSFET N-CH 300V 110A SOT-227B
Description: MOSFET N-CH 300V 110A SOT-227B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN140N30P |
|
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Technology: HiPerFET™; Polar™
Drain current: 110A
Pulsed drain current: 300A
Drain-source voltage: 300V
Power dissipation: 700W
Type of semiconductor module: MOSFET transistor
Category: Transistor drivers
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Technology: HiPerFET™; Polar™
Drain current: 110A
Pulsed drain current: 300A
Drain-source voltage: 300V
Power dissipation: 700W
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH