IXTP220N04T2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 40V 220A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3+ | 7.41 EUR |
| 50+ | 3.85 EUR |
| 100+ | 3.5 EUR |
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Technische Details IXTP220N04T2 IXYS
Description: MOSFET N-CH 40V 220A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V.
Weitere Produktangebote IXTP220N04T2 nach Preis ab 3.41 EUR bis 7.55 EUR
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IXTP220N04T2 | Hersteller : IXYS |
MOSFETs 220 Amps 40V 0.0035 Rds |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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