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IXTH90P10P

IXTH90P10P IXYS


IXT_90P10P.pdf
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
auf Bestellung 104 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.3 EUR
7+11.05 EUR
10+9.8 EUR
30+8.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTH90P10P IXYS

Description: MOSFET P-CH 100V 90A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V, Power Dissipation (Max): 462W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V.

Weitere Produktangebote IXTH90P10P nach Preis ab 11.13 EUR bis 20.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTH90P10P IXTH90P10P Hersteller : IXYS Littelfuse_Discrete_MOSFETs_P_Channel_IXT_90P10P_Datasheet.PDF MOSFETs -90.0 Amps -100V 25 mOhms
auf Bestellung 1697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.75 EUR
10+12.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTH90P10P IXTH90P10P Hersteller : Littelfuse Inc. littelfuse-discrete-mosfets-ixt-90p10p-datasheet?assetguid=611756b4-09a2-467d-8210-fa4410afc035 Description: MOSFET P-CH 100V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.26 EUR
30+13.46 EUR
120+11.54 EUR
510+11.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH