IXTP180N10T Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 100V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 2585 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.01 EUR |
| 50+ | 5.58 EUR |
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Technische Details IXTP180N10T Littelfuse Inc.
Description: MOSFET N-CH 100V 180A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.
Weitere Produktangebote IXTP180N10T nach Preis ab 6.07 EUR bis 11.62 EUR
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IXTP180N10T | Hersteller : IXYS |
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auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP180N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 |
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IXTP180N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220 |
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IXTP180N10T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6.4mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP180N10T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6.4mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns |
Produkt ist nicht verfügbar |