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Technische Details IXTH24N50L IXYS
Description: MOSFET N-CH 500V 24A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 20V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Weitere Produktangebote IXTH24N50L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTH24N50L | IXYS |
 Description: MOSFET N-CH 500V 24A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 20V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTH24N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTH24N50L | Littelfuse |
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
IXTH24N50L | Littelfuse |
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTH24N50L |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH24N50L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH24N50L |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTH24N50L |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH