auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 48.95 EUR |
| 10+ | 45.76 EUR |
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Technische Details IXTH24N50L IXYS
Description: MOSFET N-CH 500V 24A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 20V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Weitere Produktangebote IXTH24N50L nach Preis ab 42.32 EUR bis 56.67 EUR
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IXTH24N50L | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 24A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 20V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH24N50L | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH24N50L | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH24N50L | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH24N50L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |