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Technische Details IXFT30N50P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 30A, Power dissipation: 460W, Case: TO268, On-state resistance: 0.2Ω, Mounting: SMD, Gate charge: 70nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote IXFT30N50P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFT30N50P | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFT30N50P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH