Technische Details IXFY4N60P3 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 4A, Pulsed drain current: 8A, Power dissipation: 114W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 2.4Ω, Mounting: SMD, Gate charge: 6.9nC, Kind of channel: enhancement, Technology: HiPerFET™; Polar3™, Reverse recovery time: 250ns.
Weitere Produktangebote IXFY4N60P3
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IXFY4N60P3 | Hersteller : IXYS |
 MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode |
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| IXFY4N60P3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 8A Power dissipation: 114W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 6.9nC Kind of channel: enhancement Technology: HiPerFET™; Polar3™ Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |