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IXFH30N60P

IXFH30N60P IXYS


99316.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 294 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.28 EUR
30+12.24 EUR
120+10.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFH30N60P IXYS

Description: MOSFET N-CH 600V 30A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V.

Weitere Produktangebote IXFH30N60P nach Preis ab 11.46 EUR bis 20.52 EUR

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IXFH30N60P IXFH30N60P Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_30N60P_Datasheet.PDF MOSFETs 600V 30A
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.52 EUR
10+12.39 EUR
120+11.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH