IXFR15N100Q3 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 400W
Case: ISOPLUS247™
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 4+ | 22.78 EUR |
| 10+ | 19.68 EUR |
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Technische Details IXFR15N100Q3 IXYS
Description: MOSFET N-CH 1000V 10A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7.5A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V.
Weitere Produktangebote IXFR15N100Q3 nach Preis ab 27.54 EUR bis 40.6 EUR
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IXFR15N100Q3 | Hersteller : IXYS |
MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/10A |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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