IXFR15N100Q3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 64nC
On-state resistance: 1.2Ω
Drain current: 10A
Power dissipation: 400W
Drain-source voltage: 1kV
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 21.91 EUR |
| 10+ | 18.88 EUR |
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Technische Details IXFR15N100Q3 IXYS
Description: MOSFET N-CH 1000V 10A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7.5A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V.
Weitere Produktangebote IXFR15N100Q3 nach Preis ab 18.88 EUR bis 34 EUR
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IXFR15N100Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™ Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 64nC On-state resistance: 1.2Ω Drain current: 10A Power dissipation: 400W Drain-source voltage: 1kV Kind of package: tube Case: ISOPLUS247™ Kind of channel: enhancement |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR15N100Q3 | Hersteller : IXYS |
MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/10A |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFR15N100Q3 | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 1KV 10A 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
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IXFR15N100Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 10A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7.5A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V |
Produkt ist nicht verfügbar |