IXKH30N60C5 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
Anzahl je Verpackung: 1 Stücke
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Technische Details IXKH30N60C5 IXYS
Description: MOSFET N-CH 600V 30A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 1.1mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V.
Weitere Produktangebote IXKH30N60C5
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IXKH30N60C5 | Hersteller : IXYS |
Description: MOSFET N-CH 600V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V |
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IXKH30N60C5 | Hersteller : IXYS |
MOSFETs 30 Amps 600V |
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IXKH30N60C5 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO247-3 On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 310W Features of semiconductor devices: super junction coolmos Gate charge: 53nC |
Produkt ist nicht verfügbar |