IXBH10N300HV IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Turn-on time: 805ns
Turn-off time: 2.13µs
Type of transistor: IGBT
Power dissipation: 180W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 46nC
Technology: BiMOSFET™
Case: TO247HV
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 88A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Turn-on time: 805ns
Turn-off time: 2.13µs
Type of transistor: IGBT
Power dissipation: 180W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 46nC
Technology: BiMOSFET™
Case: TO247HV
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 88A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 82.17 EUR |
30+ | 79.88 EUR |
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Technische Details IXBH10N300HV IXYS
Description: IGBT 3000V 20A 140W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.6 µs, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A, Supplier Device Package: TO-247HV (IXBH), Td (on/off) @ 25°C: 36ns/100ns, Test Condition: 960V, 10A, 10Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 34 A, Voltage - Collector Emitter Breakdown (Max): 3000 V, Current - Collector Pulsed (Icm): 88 A, Power - Max: 180 W.
Weitere Produktangebote IXBH10N300HV nach Preis ab 79.88 EUR bis 114.51 EUR
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IXBH10N300HV | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Mounting: THT Turn-on time: 805ns Turn-off time: 2.13µs Type of transistor: IGBT Power dissipation: 180W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 46nC Technology: BiMOSFET™ Case: TO247HV Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 88A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBH10N300HV | Hersteller : IXYS | IGBT Transistors IGBT BIMSFT-VERYHIVOLT |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBH10N300HV Produktcode: 161629 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IXBH10N300HV | Hersteller : Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXBH10N300HV | Hersteller : IXYS |
Description: IGBT 3000V 20A 140W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.6 µs Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A Supplier Device Package: TO-247HV (IXBH) Td (on/off) @ 25°C: 36ns/100ns Test Condition: 960V, 10A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 88 A Power - Max: 180 W |
Produkt ist nicht verfügbar |