IXBH10N300HV
Produktcode: 161629
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Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote IXBH10N300HV nach Preis ab 96.49 EUR bis 121.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXBH10N300HV | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Mounting: THT Collector-emitter voltage: 3kV Power dissipation: 180W Gate charge: 46nC Technology: BiMOSFET™ Features of semiconductor devices: high voltage Pulsed collector current: 88A Type of transistor: IGBT Turn-on time: 805ns Kind of package: tube Case: TO247HV Turn-off time: 2.13µs Gate-emitter voltage: ±20V Collector current: 10A |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXBH10N300HV |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 180W
Gate charge: 46nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 88A
Type of transistor: IGBT
Turn-on time: 805ns
Kind of package: tube
Case: TO247HV
Turn-off time: 2.13µs
Gate-emitter voltage: ±20V
Collector current: 10A
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 180W
Gate charge: 46nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 88A
Type of transistor: IGBT
Turn-on time: 805ns
Kind of package: tube
Case: TO247HV
Turn-off time: 2.13µs
Gate-emitter voltage: ±20V
Collector current: 10A
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 121.61 EUR |
| 3+ | 107.36 EUR |
| 10+ | 96.49 EUR |

