IXBH10N300HV
Produktcode: 161629
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Transistoren > Transistoren IGBT, Leistungsmodule
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXBH10N300HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Type of transistor: IGBT Technology: BiMOSFET™ Power dissipation: 180W Case: TO247HV Mounting: THT Gate charge: 46nC Kind of package: tube Pulsed collector current: 88A Turn-on time: 805ns Turn-off time: 2.13µs Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 3kV Features of semiconductor devices: high voltage |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXBH10N300HV |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 180W
Case: TO247HV
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Pulsed collector current: 88A
Turn-on time: 805ns
Turn-off time: 2.13µs
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Type of transistor: IGBT
Technology: BiMOSFET™
Power dissipation: 180W
Case: TO247HV
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Pulsed collector current: 88A
Turn-on time: 805ns
Turn-off time: 2.13µs
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)