Weitere Produktangebote IXBH10N300HV
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IXBH10N300HV | Hersteller : Littelfuse |
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IXBH10N300HV | Hersteller : IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Mounting: THT Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 88A Turn-on time: 805ns Turn-off time: 2.13µs Type of transistor: IGBT Power dissipation: 180W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 46nC Technology: BiMOSFET™ Case: TO247HV Anzahl je Verpackung: 1 Stücke |
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IXBH10N300HV | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.6 µs Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A Supplier Device Package: TO-247HV (IXBH) Td (on/off) @ 25°C: 36ns/100ns Test Condition: 960V, 10A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 88 A Power - Max: 180 W |
Produkt ist nicht verfügbar |
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IXBH10N300HV | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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IXBH10N300HV | Hersteller : IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Mounting: THT Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 88A Turn-on time: 805ns Turn-off time: 2.13µs Type of transistor: IGBT Power dissipation: 180W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 46nC Technology: BiMOSFET™ Case: TO247HV |
Produkt ist nicht verfügbar |