auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 67.25 EUR |
| 10+ | 62.73 EUR |
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Technische Details IXFN120N65X2 IXYS
Description: MOSFET N-CH 650V 108A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V.
Weitere Produktangebote IXFN120N65X2 nach Preis ab 56.23 EUR bis 69.47 EUR
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IXFN120N65X2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 650V 108A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN120N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 108A 4-Pin SOT-227B |
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IXFN120N65X2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 108A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 24mΩ Kind of channel: enhancement Pulsed drain current: 240A Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Gate charge: 240nC Reverse recovery time: 220ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN120N65X2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 108A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 24mΩ Kind of channel: enhancement Pulsed drain current: 240A Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Gate charge: 240nC Reverse recovery time: 220ns |
Produkt ist nicht verfügbar |