IXFN120N65X2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 650V 108A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 69.47 EUR |
| 10+ | 64.3 EUR |
| 100+ | 56.23 EUR |
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Technische Details IXFN120N65X2 Littelfuse Inc.
Description: MOSFET N-CH 650V 108A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V.
Weitere Produktangebote IXFN120N65X2 nach Preis ab 49.99 EUR bis 71.5 EUR
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IXFN120N65X2 | Hersteller : IXYS |
MOSFET Modules 650V/108A Ultra Junction X2-Class |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN120N65X2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 650V Drain current: 108A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 24mΩ Pulsed drain current: 240A Power dissipation: 890W Technology: HiPerFET™; X2-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 220ns Gate charge: 240nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN120N65X2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 650V Drain current: 108A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 24mΩ Pulsed drain current: 240A Power dissipation: 890W Technology: HiPerFET™; X2-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 220ns Gate charge: 240nC Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN120N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 108A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |