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IXFN120N65X2

IXFN120N65X2 Littelfuse Inc.


a Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 108A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
auf Bestellung 282 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.47 EUR
10+64.30 EUR
100+56.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFN120N65X2 Littelfuse Inc.

Description: MOSFET N-CH 650V 108A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V.

Weitere Produktangebote IXFN120N65X2 nach Preis ab 49.99 EUR bis 75.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFN120N65X2 IXFN120N65X2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9EAC65F2DB820&compId=IXFN120N65X2.pdf?ci_sign=073e54168aecec180c88c9f2f85635c9946f2fa1 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 108A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 240A
Power dissipation: 890W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 220ns
Gate charge: 240nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
100+49.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN120N65X2 IXFN120N65X2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9EAC65F2DB820&compId=IXFN120N65X2.pdf?ci_sign=073e54168aecec180c88c9f2f85635c9946f2fa1 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 108A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 240A
Power dissipation: 890W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 220ns
Gate charge: 240nC
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN120N65X2 IXFN120N65X2 Hersteller : IXYS media-3320610.pdf MOSFET Modules 650V/108A Ultra Junction X2-Class
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.06 EUR
10+69.47 EUR
100+62.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN120N65X2 IXFN120N65X2 Hersteller : Littelfuse fets_n-channel_ultra_junction_ixfn120n65x2_datasheet.pdf.pdf Trans MOSFET N-CH 650V 108A 4-Pin SOT-227B
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