Produkte > IXF

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
IXF1002ECLEVELONEBGA
auf Bestellung 3325 Stücke:
Lieferzeit 21-28 Tag (e)
IXF1002ECLEVEL ONE09+ .
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
IXF1002EDRochester Electronics, LLCDescription: IXF1002ED
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8930 Stücke:
Lieferzeit 21-28 Tag (e)
2+402.17 EUR
Mindestbestellmenge: 2
IXF1002ED-GRochester Electronics, LLCDescription: IXF1002ED-G
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1167 Stücke:
Lieferzeit 21-28 Tag (e)
2+391.53 EUR
Mindestbestellmenge: 2
IXF1024ECINTEL
auf Bestellung 55 Stücke:
Lieferzeit 21-28 Tag (e)
IXF1024ECA2INTERSIL
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXF102AIconDescription: HEADLIGHT LED 5/50LM AA(1)
Produkt ist nicht verfügbar
IXF1104CEINTEL
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXF1104CEMOTBGA
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
IXF1104CEINTELTO92
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
IXF1104CE.BOINTELBGA 0612+
auf Bestellung 83 Stücke:
Lieferzeit 21-28 Tag (e)
IXF150N10IXYSMODULE
auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)
IXF18203EC B1INTELBGA
auf Bestellung 3325 Stücke:
Lieferzeit 21-28 Tag (e)
IXF30003INTEL02+ BGA
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
IXF3208BE COINTELBGA
auf Bestellung 325 Stücke:
Lieferzeit 21-28 Tag (e)
IXF6012EE B1LEVELONEBGA
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
IXF6012EE B1INTER09+ BGA
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
IXF6012EEB1INTEL04+ BGA
auf Bestellung 2035 Stücke:
Lieferzeit 21-28 Tag (e)
IXF611P1IXYSDescription: IC DRIVER MOSF/IGBT HALF 8DIP
Produkt ist nicht verfügbar
IXF611S1IXYSDescription: IC DRIVER MOSF/IGBT HALF 8-SOIC
Produkt ist nicht verfügbar
IXF611S1T/RIXYSDescription: IC DRIVER MOSF/IGBT HALF 8-SOIC
Produkt ist nicht verfügbar
IXF6151BE A2INTEL01+
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
IXF6401BEC-7LEVELONEBGA
auf Bestellung 3325 Stücke:
Lieferzeit 21-28 Tag (e)
IXF6401BEC7A1835148IntelDescription: IC PROCESSOR BROADBAND 352BGA
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
IXF6402BEC B4LEVELONEBGA
auf Bestellung 3325 Stücke:
Lieferzeit 21-28 Tag (e)
IXF6402BEC B4INTER09+ BGA
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
IXFA102N15TIXYSDescription: MOSFET N-CH 150V 102A D2PAK
Produkt ist nicht verfügbar
IXFA10N60PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA10N60PLittelfuseTrans MOSFET N-CH 600V 10A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA10N60PIXYSMOSFET 600V 10A
auf Bestellung 268 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.01 EUR
10+ 8.48 EUR
50+ 7.93 EUR
100+ 6.79 EUR
250+ 6.4 EUR
500+ 5.77 EUR
1000+ 5.25 EUR
Mindestbestellmenge: 6
IXFA10N60PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
IXFA10N60PIXYSDescription: MOSFET N-CH 600V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
auf Bestellung 1222 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.93 EUR
50+ 7.89 EUR
100+ 6.76 EUR
500+ 6.01 EUR
1000+ 5.14 EUR
Mindestbestellmenge: 3
IXFA10N60P-TRLIXYSMOSFET 600V 10A
Produkt ist nicht verfügbar
IXFA10N60P-TRLIXYSDescription: MOSFET N-CH 600V 10A D2-PAK
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.93 EUR
10+ 8.35 EUR
100+ 6.76 EUR
Mindestbestellmenge: 3
IXFA10N60P-TRLIXYSDescription: MOSFET N-CH 600V 10A D2-PAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
IXFA10N80PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFA10N80PLittelfuseTrans MOSFET N-CH 800V 10A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA10N80PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA10N80PIXYSMOSFET 10 Amps 800V 1.1 Rds
auf Bestellung 10121 Stücke:
Lieferzeit 678-692 Tag (e)
5+10.89 EUR
50+ 8.63 EUR
Mindestbestellmenge: 5
IXFA10N80PIXYSDescription: MOSFET N-CH 800V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA10N80PLittelfuseTrans MOSFET N-CH 800V 10A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA10N80P-TRLIXYSMOSFET IXFA10N80P TRL
Produkt ist nicht verfügbar
IXFA10N80P-TRLIXYSDescription: MOSFET N-CH 800V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA10N80PTRLLittelfuseTrans MOSFET N-CH 800V 10A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA110N15T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.85 EUR
12+ 6.16 EUR
15+ 4.9 EUR
16+ 4.65 EUR
50+ 4.63 EUR
Mindestbestellmenge: 11
IXFA110N15T2LittelfuseTrans MOSFET N-CH 150V 110A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA110N15T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.85 EUR
12+ 6.16 EUR
15+ 4.9 EUR
16+ 4.65 EUR
50+ 4.63 EUR
Mindestbestellmenge: 11
IXFA110N15T2IXYSMOSFET 110Amps 150V
auf Bestellung 25 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.91 EUR
10+ 13.36 EUR
50+ 11.34 EUR
100+ 10.71 EUR
250+ 10.19 EUR
500+ 10.14 EUR
Mindestbestellmenge: 4
IXFA110N15T2IXYSDescription: MOSFET N-CH 150V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar
IXFA110N15T2-TRLIXYSMOSFET IXFA110N15T2 TRL
Produkt ist nicht verfügbar
IXFA110N15T2-TRLIXYSDescription: MOSFET N-CH 150V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar
IXFA12N50PLittelfuseTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA12N50PIXYSMOSFET 500V 12A
auf Bestellung 623 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.01 EUR
10+ 8.42 EUR
50+ 7.15 EUR
100+ 6.24 EUR
250+ 6.06 EUR
500+ 5.67 EUR
1000+ 5.25 EUR
Mindestbestellmenge: 6
IXFA12N50PIXYSDescription: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
IXFA12N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.68 EUR
18+ 4.2 EUR
22+ 3.35 EUR
23+ 3.17 EUR
Mindestbestellmenge: 16
IXFA12N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.68 EUR
18+ 4.2 EUR
22+ 3.35 EUR
23+ 3.17 EUR
Mindestbestellmenge: 16
IXFA12N50P TRLLittelfuseTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA12N50P-TRLIXYSMOSFET IXFA12N50P TRL
Produkt ist nicht verfügbar
IXFA12N50P-TRLIXYSDescription: MOSFET N-CH 500V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
IXFA12N65X2IXYSMOSFET 650V/12A TO-263
Produkt ist nicht verfügbar
IXFA12N65X2IXYSDescription: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 1238 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.14 EUR
50+ 8.04 EUR
100+ 6.89 EUR
500+ 6.12 EUR
1000+ 5.24 EUR
Mindestbestellmenge: 3
IXFA12N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA12N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
Produkt ist nicht verfügbar
IXFA12N65X2-TRLIXYSMOSFET IXFA12N65X2 TRL
Produkt ist nicht verfügbar
IXFA12N65X2-TRLIXYSDescription: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
IXFA130N10TIXYSMOSFET 130 Amps 100V
Produkt ist nicht verfügbar
IXFA130N10TIXYSDescription: MOSFET N-CH 100V 130A D2PAK
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)
IXFA130N10T2IXYSMOSFET Trench T2 HiperFET Power MOSFET
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
4+13 EUR
10+ 10.92 EUR
50+ 9.13 EUR
Mindestbestellmenge: 4
IXFA130N10T2IXYSDescription: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.92 EUR
50+ 10.24 EUR
100+ 8.77 EUR
Mindestbestellmenge: 3
IXFA130N10T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.4 EUR
19+ 3.95 EUR
20+ 3.69 EUR
50+ 3.6 EUR
Mindestbestellmenge: 17
IXFA130N10T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.4 EUR
19+ 3.95 EUR
20+ 3.69 EUR
50+ 3.6 EUR
Mindestbestellmenge: 17
IXFA130N10T2-TRLLittelfuseTrans MOSFET N-CH 100V 130A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA130N10T2-TRLIXYSMOSFET IXFA130N10T2 TRL
Produkt ist nicht verfügbar
IXFA130N10T2-TRLIXYSDescription: MOSFET N-CH 100V 130A TO263
Produkt ist nicht verfügbar
IXFA130N15X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 80ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXFA130N15X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 16 Stücke:
Lieferzeit 14-28 Tag (e)
3+24.1 EUR
10+ 21.79 EUR
50+ 21.32 EUR
100+ 19.29 EUR
Mindestbestellmenge: 3
IXFA130N15X3IXYSDescription: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
auf Bestellung 1359 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.54 EUR
50+ 18.01 EUR
100+ 16.11 EUR
500+ 14.22 EUR
1000+ 12.8 EUR
Mindestbestellmenge: 2
IXFA130N15X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
3+ 23.84 EUR
6+ 11.91 EUR
50+ 7.24 EUR
IXFA130N15X3LittelfuseTrans MOSFET N-CH 150V 130A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA130N15X3TRLIXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXFA130N15X3TRLIXYSDescription: MOSFET N-CH 150V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
IXFA14N60PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA14N60PIXYSMOSFET 600V 14A
auf Bestellung 403 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.14 EUR
10+ 10.19 EUR
50+ 8.5 EUR
100+ 6.32 EUR
Mindestbestellmenge: 5
IXFA14N60PLittelfuseTrans MOSFET N-CH 600V 14A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA14N60PIXYSDescription: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.06 EUR
50+ 9.55 EUR
100+ 8.19 EUR
Mindestbestellmenge: 3
IXFA14N60PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFA14N60P-TRLIXYSDescription: MOSFET N-CH 600V 14A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
IXFA14N60P-TRLIXYSMOSFET IXFA14N60P TRL
Produkt ist nicht verfügbar
IXFA14N60P3IXYSMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
auf Bestellung 50 Stücke:
Lieferzeit 14-28 Tag (e)
IXFA14N60P3IXYSDescription: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
IXFA14N85XHVLittelfuseTrans MOSFET N-CH 850V 14A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXFA14N85XHVIXYSMOSFET MSFT N-CH ULTRA JNCT X3&44
Produkt ist nicht verfügbar
IXFA14N85XHVIXYSDescription: MOSFET N-CH 850V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
auf Bestellung 1650 Stücke:
Lieferzeit 21-28 Tag (e)
300+10.19 EUR
Mindestbestellmenge: 300
IXFA14N85XHVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO263HV
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.82 EUR
14+ 5.22 EUR
15+ 4.86 EUR
50+ 4.76 EUR
Mindestbestellmenge: 13
IXFA14N85XHVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO263HV
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.82 EUR
14+ 5.22 EUR
15+ 4.86 EUR
50+ 4.76 EUR
Mindestbestellmenge: 13
IXFA16N50PLittelfuseTrans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA16N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA16N50PLittelfuseTrans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA16N50PIXYSMOSFET 500V 16A
auf Bestellung 287 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.14 EUR
10+ 10.53 EUR
50+ 8.92 EUR
100+ 8.24 EUR
250+ 7.96 EUR
500+ 7.12 EUR
1000+ 6.45 EUR
Mindestbestellmenge: 5
IXFA16N50PIXYSDescription: MOSFET N-CH 500V 16A TO263
Produkt ist nicht verfügbar
IXFA16N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFA16N50P-TRLIXYSMOSFET IXFA16N50P TRL
Produkt ist nicht verfügbar
IXFA16N50P-TRLIXYSDescription: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Produkt ist nicht verfügbar
IXFA16N50P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.45 EUR
15+ 4.9 EUR
19+ 3.89 EUR
20+ 3.68 EUR
Mindestbestellmenge: 14
IXFA16N50P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.45 EUR
15+ 4.9 EUR
19+ 3.89 EUR
20+ 3.68 EUR
Mindestbestellmenge: 14
IXFA16N50P3IXYSMOSFET Polar3 HiPerFET Power MOSFET
Produkt ist nicht verfügbar
IXFA16N50P3IXYSDescription: MOSFET N-CH 500V 16A TO-263AA
Produkt ist nicht verfügbar
IXFA16N60P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.89 EUR
12+ 6.03 EUR
Mindestbestellmenge: 9
IXFA16N60P3IXYSMOSFET 600V 16A
Produkt ist nicht verfügbar
IXFA16N60P3IXYSDescription: MOSFET N-CH 600V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 8A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
IXFA16N60P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.89 EUR
12+ 6.03 EUR
Mindestbestellmenge: 9
IXFA180N10T2IXYSMOSFET Trench T2 HiperFET Power MOSFET
auf Bestellung 2065 Stücke:
Lieferzeit 436-450 Tag (e)
4+15.6 EUR
10+ 15.57 EUR
50+ 12.45 EUR
Mindestbestellmenge: 4
IXFA180N10T2IXYSDescription: MOSFET N-CH 100V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.47 EUR
Mindestbestellmenge: 2
IXFA180N10T2LittelfuseTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA180N10T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA180N10T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Produkt ist nicht verfügbar
IXFA180N10T2-TRLIXYSMOSFET IXFA180N10T2 TRL
Produkt ist nicht verfügbar
IXFA180N10T2-TRLIXYSDescription: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Produkt ist nicht verfügbar
IXFA180N10T2-TRLLittelfuseN-Channel Power MOSFET
Produkt ist nicht verfügbar
IXFA18N60XIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.28 EUR
10+ 7.45 EUR
11+ 6.94 EUR
50+ 6.79 EUR
Mindestbestellmenge: 9
IXFA18N60XIXYSMOSFET DiscMSFT NCh UltrJnctn XClass TO-263D2
Produkt ist nicht verfügbar
IXFA18N60XIXYSDescription: MOSFET N-CH 600V 18A TO263AA
Produkt ist nicht verfügbar
IXFA18N60XLittelfuseX-CLASS HIPER FET POWER MOSFET
Produkt ist nicht verfügbar
IXFA18N60XIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.28 EUR
10+ 7.45 EUR
11+ 6.94 EUR
50+ 6.79 EUR
Mindestbestellmenge: 9
IXFA18N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA18N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
IXFA18N65X2IXYSMOSFET 650V/18A TO-263
Produkt ist nicht verfügbar
IXFA18N65X2IXYSDescription: MOSFET N-CH 650V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Produkt ist nicht verfügbar
IXFA18N65X3LittelfuseLittelfuse 18A 650V X3 TO263
Produkt ist nicht verfügbar
IXFA18N65X3IXYSDescription: DISCRETE MOSFET 18A 650V X3 TO26
Packaging: Tube
Produkt ist nicht verfügbar
IXFA20N50P3IXYSMOSFET Polar3 HiPerFET Power MOSFET
Produkt ist nicht verfügbar
IXFA20N50P3IXYSDescription: MOSFET N-CH 500V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
IXFA20N50P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
21+ 3.53 EUR
22+ 3.29 EUR
Mindestbestellmenge: 19
IXFA20N50P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.93 EUR
21+ 3.53 EUR
22+ 3.29 EUR
50+ 3.22 EUR
Mindestbestellmenge: 19
IXFA20N85XHVIXYSIXFA20N85XHV SMD N channel transistors
Produkt ist nicht verfügbar
IXFA20N85XHVIXYSMOSFET 850V Ultra Junction X-Class Pwr MOSFET
auf Bestellung 267 Stücke:
Lieferzeit 14-28 Tag (e)
3+22.2 EUR
10+ 20.05 EUR
50+ 19.11 EUR
100+ 16.59 EUR
500+ 14.46 EUR
1000+ 12.3 EUR
2500+ 12.09 EUR
Mindestbestellmenge: 3
IXFA20N85XHVIXYSDescription: MOSFET N-CH 850V 20A TO263
Produkt ist nicht verfügbar
IXFA20N85XHVLittelfuseTrans MOSFET N-CH 850V 20A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXFA20N85XHVLittelfuseTrans MOSFET N-CH 850V 20A Automotive 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXFA20N85XHV-TRLIXYSMOSFET IXFA20N85XHV TRL
Produkt ist nicht verfügbar
IXFA20N85XHV-TRLIXYSDescription: MOSFET N-CH 850V 20A TO263HV
Produkt ist nicht verfügbar
IXFA20N85XHV-TRLLittelfuseTrans MOSFET N-CH 850V 20A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXFA220N06T3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
IXFA220N06T3
Produktcode: 147921		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXFA220N06T3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA220N06T3IXYSMOSFET 60V/220A TrenchT3
auf Bestellung 139 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.57 EUR
10+ 10.01 EUR
50+ 9.7 EUR
100+ 8.11 EUR
250+ 7.59 EUR
500+ 6.89 EUR
1000+ 5.8 EUR
Mindestbestellmenge: 5
IXFA220N06T3IXYSDescription: MOSFET N-CH 60V 220A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
auf Bestellung 160 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.47 EUR
10+ 9.64 EUR
100+ 7.8 EUR
Mindestbestellmenge: 3
IXFA22N60P3IXYSMOSFET MOSFET DISCRETE
Produkt ist nicht verfügbar
IXFA22N60P3IXYSDescription: MOSFET N-CH 600V 22A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
300+9.33 EUR
Mindestbestellmenge: 300
IXFA22N60P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.28 EUR
13+ 5.65 EUR
16+ 4.63 EUR
17+ 4.38 EUR
Mindestbestellmenge: 12
IXFA22N60P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.28 EUR
13+ 5.65 EUR
16+ 4.63 EUR
17+ 4.38 EUR
Mindestbestellmenge: 12
IXFA22N65X2IXYSMOSFET MOSFET 650V/22A Ultra Junction X2
auf Bestellung 224 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.68 EUR
10+ 11.49 EUR
50+ 10.17 EUR
100+ 8.97 EUR
500+ 8.24 EUR
1000+ 7.12 EUR
Mindestbestellmenge: 4
IXFA22N65X2IXYSDescription: MOSFET N-CH 650V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
auf Bestellung 1450 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.6 EUR
50+ 10.77 EUR
100+ 9.23 EUR
500+ 8.2 EUR
1000+ 7.02 EUR
Mindestbestellmenge: 2
IXFA22N65X2LittelfuseTrans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA22N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
IXFA22N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA22N65X2-TRLIXYSDescription: MOSFET N-CH 650V 22A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.6 EUR
10+ 11.41 EUR
100+ 9.23 EUR
Mindestbestellmenge: 2
IXFA22N65X2-TRLIXYSMOSFET IXFA22N65X2 TRL
Produkt ist nicht verfügbar
IXFA22N65X2-TRLIXYSDescription: MOSFET N-CH 650V 22A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+8.2 EUR
Mindestbestellmenge: 800
IXFA22N65X2-TRLLittelfuseTrans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA230N075T2IXYSMOSFET TrenchT2 HiperFETs Power MOSFET
Produkt ist nicht verfügbar
IXFA230N075T2LittelfuseTrans MOSFET N-CH 75V 230A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA230N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.81 EUR
11+ 7.02 EUR
14+ 5.32 EUR
15+ 5.02 EUR
Mindestbestellmenge: 10
IXFA230N075T2IXYSDescription: MOSFET N-CH 75V 230A TO-263AA
Produkt ist nicht verfügbar
IXFA230N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.81 EUR
11+ 7.02 EUR
14+ 5.32 EUR
15+ 5.02 EUR
Mindestbestellmenge: 10
IXFA230N075T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
13+ 5.52 EUR
14+ 5.22 EUR
Mindestbestellmenge: 12
IXFA230N075T2-7IXYSDescription: MOSFET N-CH 75V 230A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.96 EUR
10+ 13.67 EUR
Mindestbestellmenge: 2
IXFA230N075T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.45 EUR
13+ 5.52 EUR
14+ 5.22 EUR
Mindestbestellmenge: 12
IXFA230N075T2-7IXYSMOSFET TrenchT2 HiperFETs Power MOSFET
Produkt ist nicht verfügbar
IXFA24N60XIXYSDescription: MOSFET N-CH 600V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 25 V
Produkt ist nicht verfügbar
IXFA24N60XIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.05 EUR
12+ 6.35 EUR
15+ 4.78 EUR
Mindestbestellmenge: 11
IXFA24N60XIXYSMOSFET DiscMSFT NCh UltrJnctn XClass TO-263D2
Produkt ist nicht verfügbar
IXFA24N60XIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.05 EUR
12+ 6.35 EUR
15+ 4.78 EUR
Mindestbestellmenge: 11
IXFA26N30X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 550 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.71 EUR
10+ 11.41 EUR
50+ 10.79 EUR
100+ 9.36 EUR
500+ 7.96 EUR
1000+ 6.73 EUR
2500+ 6.32 EUR
Mindestbestellmenge: 5
IXFA26N30X3IXYSDescription: MOSFET N-CH 300V 26A TO263AA
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.19 EUR
Mindestbestellmenge: 3
IXFA26N30X3IXYSIXFA26N30X3 SMD N channel transistors
Produkt ist nicht verfügbar
IXFA26N30X3LittelfuseTrans MOSFET N-CH 300V 26A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA26N50P3IXYSDescription: MOSFET N-CH 500V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Produkt ist nicht verfügbar
IXFA26N50P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.58 EUR
13+ 5.82 EUR
14+ 5.22 EUR
15+ 4.93 EUR
50+ 4.86 EUR
Mindestbestellmenge: 11
IXFA26N50P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.58 EUR
13+ 5.82 EUR
14+ 5.22 EUR
15+ 4.93 EUR
50+ 4.86 EUR
Mindestbestellmenge: 11
IXFA26N50P3IXYSMOSFET N-Channel: Power MOSFET w/Fast Diode
Produkt ist nicht verfügbar
IXFA26N65X3LittelfuseLittelfuse MOSFET 26A 650V X3 TO263
Produkt ist nicht verfügbar
IXFA26N65X3IXYSDescription: DISCRETE MOSFET 26A 650V X3 TO26
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 500mA, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
IXFA270N06T3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
Produkt ist nicht verfügbar
IXFA270N06T3IXYSDescription: MOSFET N-CH 60V 270A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Produkt ist nicht verfügbar
IXFA270N06T3LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXFA270N06T3IXYSMOSFET 60V/270A TrenchT3
Produkt ist nicht verfügbar
IXFA270N06T3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA28N60X3LittelfuseLittelfuse MOSFET 28A 600V X3 TO263
Produkt ist nicht verfügbar
IXFA30N25X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 1036 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.28 EUR
10+ 16.51 EUR
50+ 15.73 EUR
100+ 13.65 EUR
500+ 11.91 EUR
1000+ 10.11 EUR
2500+ 9.78 EUR
Mindestbestellmenge: 3
IXFA30N25X3IXYSDescription: MOSFET N-CHANNEL 250V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 640 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.56 EUR
10+ 16.78 EUR
100+ 13.89 EUR
500+ 12.1 EUR
Mindestbestellmenge: 2
IXFA30N25X3LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXFA30N25X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA30N25X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Produkt ist nicht verfügbar
IXFA30N60XIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA30N60XIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Produkt ist nicht verfügbar
IXFA30N60XIXYSMOSFET DiscMSFT NCh UltrJnctn XClass TO-263D2
Produkt ist nicht verfügbar
IXFA30N60XIXYSDescription: MOSFET N-CH 600V 30A TO-263
Produkt ist nicht verfügbar
IXFA34N65X2IXYSMOSFET 650V/34A Ultra Junction X2-Class
Produkt ist nicht verfügbar
IXFA34N65X2LittelfuseTrans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA34N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA34N65X2LittelfuseTrans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA34N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Produkt ist nicht verfügbar
IXFA34N65X2-TRLIXYSDescription: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
Produkt ist nicht verfügbar
IXFA34N65X2-TRLLittelfuseTrans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA34N65X2-TRLIXYSMOSFET IXFA34N65X2 TRL
Produkt ist nicht verfügbar
IXFA34N65X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA34N65X3IXYSMOSFET DISCRETE MOSFET 34A 650V X3 TO
auf Bestellung 371 Stücke:
Lieferzeit 14-28 Tag (e)
3+20.23 EUR
50+ 16.15 EUR
100+ 14.46 EUR
500+ 14.22 EUR
Mindestbestellmenge: 3
IXFA34N65X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
IXFA34N65X3IXYSDescription: MOSFET 34A 650V X3 TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
Produkt ist nicht verfügbar
IXFA34N65X3LittelfuseDiscrete MOSFET 34A 650V X3 TO263
Produkt ist nicht verfügbar
IXFA36N20X3IXYSDescription: MOSFET N-CH 200V 36A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
auf Bestellung 1696 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.09 EUR
10+ 10.86 EUR
100+ 8.9 EUR
500+ 7.57 EUR
1000+ 6.39 EUR
Mindestbestellmenge: 3
IXFA36N20X3LittelfuseTrans MOSFET N-CH 200V 36A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA36N20X3IXYSIXFA36N20X3 SMD N channel transistors
Produkt ist nicht verfügbar
IXFA36N20X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 436 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.71 EUR
10+ 11.41 EUR
50+ 10.79 EUR
100+ 9.36 EUR
500+ 7.96 EUR
1000+ 6.73 EUR
2500+ 6.32 EUR
Mindestbestellmenge: 5
IXFA36N30P3IXYSDescription: MOSFET N-CH 300V 36A TO263AA
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.21 EUR
10+ 11.85 EUR
100+ 9.71 EUR
500+ 8.27 EUR
Mindestbestellmenge: 2
IXFA36N30P3LittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXFA36N30P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 347W
Case: TO263
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
Produkt ist nicht verfügbar
IXFA36N30P3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 347W
Case: TO263
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA36N30P3IXYSMOSFET MSFT N-CH HIPERFET-POLAR3
auf Bestellung 234 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.03 EUR
10+ 11.7 EUR
50+ 11.05 EUR
100+ 9.57 EUR
Mindestbestellmenge: 4
IXFA36N55X2IXYSMOSFET MOSFET DISCRETE
Produkt ist nicht verfügbar
IXFA36N55X2IXYSDescription: IXFA36N55X2
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)
50+21.64 EUR
Mindestbestellmenge: 50
IXFA36N60X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA36N60X3IXYSDescription: MOSFET ULTRA JCT 600V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.17 EUR
Mindestbestellmenge: 2
IXFA36N60X3LittelfuseN-Channel Enhancement Mode Power MOSFET
Produkt ist nicht verfügbar
IXFA36N60X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
IXFA36N60X3IXYSMOSFET DISCRETE MOSFET 36A 600V X3 TO
auf Bestellung 1500 Stücke:
Lieferzeit 753-767 Tag (e)
4+16.43 EUR
10+ 15.13 EUR
50+ 13.13 EUR
Mindestbestellmenge: 4
IXFA38N30X3LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXFA38N30X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.32 EUR
15+ 4.79 EUR
16+ 4.55 EUR
17+ 4.3 EUR
Mindestbestellmenge: 14
IXFA38N30X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 378 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.95 EUR
10+ 13.62 EUR
50+ 12.09 EUR
100+ 10.53 EUR
Mindestbestellmenge: 4
IXFA38N30X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.32 EUR
15+ 4.79 EUR
16+ 4.55 EUR
17+ 4.3 EUR
Mindestbestellmenge: 14
IXFA38N30X3IXYSDescription: MOSFET N-CH 300V 38A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
auf Bestellung 4332 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.69 EUR
50+ 11.63 EUR
100+ 9.97 EUR
500+ 8.86 EUR
1000+ 7.59 EUR
2000+ 7.15 EUR
Mindestbestellmenge: 2
IXFA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
9+16.96 EUR
10+ 15.64 EUR
25+ 15 EUR
Mindestbestellmenge: 9
IXFA3N120IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA3N120IXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA3N120
Produktcode: 83348		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXFA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
9+16.96 EUR
10+ 15.64 EUR
25+ 15 EUR
Mindestbestellmenge: 9
IXFA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA3N120IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFA3N120IXYSMOSFET 3 Amps 1200V 4.5 Rds
auf Bestellung 550 Stücke:
Lieferzeit 471-485 Tag (e)
3+23.09 EUR
10+ 19.81 EUR
50+ 17.94 EUR
100+ 16.48 EUR
250+ 15.52 EUR
Mindestbestellmenge: 3
IXFA3N120-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA3N120-TRLIXYSMOSFET IXFA3N120 TRL
Produkt ist nicht verfügbar
IXFA3N120-TRLIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA3N120-TRLIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA3N120-TRRIXYSMOSFET IXFA3N120 TRR
Produkt ist nicht verfügbar
IXFA3N120-TRRIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA3N120-TRRLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA3N120TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA3N80IXYSMOSFET 3.6 Amps 800V 3.6 Rds
Produkt ist nicht verfügbar
IXFA3N80IXYSDescription: MOSFET N-CH 800V 3.6A TO-263
Produkt ist nicht verfügbar
IXFA44N25X3IXYSMOSFET MOSFET DISC X3
Produkt ist nicht verfügbar
IXFA44N25X3IXYSDescription: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 21-28 Tag (e)
300+9.51 EUR
Mindestbestellmenge: 300
IXFA44N25X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXFA44N25X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA4N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFA4N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA4N100PLittelfuseTrans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA4N100PIXYSMOSFET 4 Amps 1000V
auf Bestellung 800 Stücke:
Lieferzeit 336-350 Tag (e)
6+9.85 EUR
10+ 9.07 EUR
50+ 7.8 EUR
100+ 6.71 EUR
250+ 6.32 EUR
500+ 5.95 EUR
1000+ 5.15 EUR
Mindestbestellmenge: 6
IXFA4N100PIXYSDescription: MOSFET N-CH 1000V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V
Produkt ist nicht verfügbar
IXFA4N100P-TRLIXYSMOSFET IXFA4N100P TRL
Produkt ist nicht verfügbar
IXFA4N100QIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA4N100QIXYSMOSFET 4 Amps 1000V 2.8 Rds
Produkt ist nicht verfügbar
IXFA4N100QLittelfuseTrans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA4N100QIXYSDescription: MOSFET N-CH 1000V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA4N100QIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
IXFA4N100Q-TRLLittelfuseTrans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA4N100Q-TRLIXYSDescription: MOSFET N-CH 1000V 4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA4N100Q-TRLIXYSMOSFET
Produkt ist nicht verfügbar
IXFA4N100Q-TRLIXYSDescription: MOSFET N-CH 1000V 4A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXFA4N100QTRLittelfuseTrans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA4N60P3IXYSMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
Produkt ist nicht verfügbar
IXFA4N60P3IXYSDescription: MOSFET N-CH 600V 4A TO263
Produkt ist nicht verfügbar
IXFA4N85XIXYSIXFA4N85X SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.7 EUR
23+ 3.17 EUR
24+ 3 EUR
50+ 2.99 EUR
Mindestbestellmenge: 20
IXFA4N85XIXYSMOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-263
auf Bestellung 50 Stücke:
Lieferzeit 14-28 Tag (e)
IXFA4N85XIXYSDescription: MOSFET N-CH 850V 3.5A TO263
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.15 EUR
10+ 10.03 EUR
Mindestbestellmenge: 3
IXFA50N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA50N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
IXFA50N20X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXFA50N20X3IXYSDescription: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
IXFA56N30X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 2080 Stücke:
Lieferzeit 14-28 Tag (e)
3+20.57 EUR
10+ 17.65 EUR
50+ 16.9 EUR
Mindestbestellmenge: 3
IXFA56N30X3IXYSDescription: MOSFET N-CH 300V 56A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 258 Stücke:
Lieferzeit 21-28 Tag (e)
2+20.96 EUR
10+ 17.97 EUR
100+ 14.97 EUR
Mindestbestellmenge: 2
IXFA56N30X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO263
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Reverse recovery time: 115ns
Mounting: SMD
Power dissipation: 320W
Gate charge: 56nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 56A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
7+ 10.21 EUR
Mindestbestellmenge: 6
IXFA56N30X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO263
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Reverse recovery time: 115ns
Mounting: SMD
Power dissipation: 320W
Gate charge: 56nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 56A
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
IXFA5N100PLittelfuseTrans MOSFET N-CH 1KV 5A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA5N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA5N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFA5N100PIXYSMOSFET Polar Power MOSFET HiPerFET
auf Bestellung 300 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.1 EUR
10+ 10.35 EUR
50+ 8.79 EUR
100+ 8.5 EUR
250+ 8.16 EUR
500+ 8.01 EUR
1000+ 7.85 EUR
Mindestbestellmenge: 5
IXFA5N100PIXYSDescription: MOSFET N-CH 1000V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
IXFA5N100P-TRLIXYSMOSFET IXFA5N100P TRL
Produkt ist nicht verfügbar
IXFA5N100P-TRLIXYSDescription: MOSFET N-CH 1000V 5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
IXFA5N100PTRLLittelfuseTrans MOSFET N-CH 1KV 5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA5N50P3IXYSMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
Produkt ist nicht verfügbar
IXFA5N50P3IXYSDescription: MOSFET N-CH 500V 5A TO263
Produkt ist nicht verfügbar
IXFA60N25X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO263
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.88 EUR
11+ 6.75 EUR
12+ 6.38 EUR
Mindestbestellmenge: 10
IXFA60N25X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO263
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.88 EUR
11+ 6.75 EUR
12+ 6.38 EUR
Mindestbestellmenge: 10
IXFA60N25X3LittelfuseTrans MOSFET N-CH 250V 60A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA60N25X3IXYSMOSFET 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 300 Stücke:
Lieferzeit 14-28 Tag (e)
3+19.73 EUR
10+ 16.93 EUR
50+ 15.34 EUR
100+ 14.07 EUR
250+ 12.87 EUR
500+ 12.61 EUR
Mindestbestellmenge: 3
IXFA60N25X3IXYSDescription: MOSFET N-CH 250V 60A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 38 Stücke:
Lieferzeit 21-28 Tag (e)
2+20.12 EUR
10+ 17.25 EUR
Mindestbestellmenge: 2
IXFA6N120PIXYSMOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
auf Bestellung 612 Stücke:
Lieferzeit 14-28 Tag (e)
3+24.49 EUR
10+ 22.57 EUR
50+ 19.24 EUR
100+ 17.5 EUR
250+ 16.9 EUR
500+ 15.44 EUR
1000+ 14.85 EUR
Mindestbestellmenge: 3
IXFA6N120PIXYSDescription: MOSFET N-CH 1200V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
auf Bestellung 3717 Stücke:
Lieferzeit 21-28 Tag (e)
2+24.31 EUR
50+ 19.41 EUR
100+ 17.37 EUR
500+ 15.33 EUR
1000+ 13.79 EUR
Mindestbestellmenge: 2
IXFA6N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.75Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA6N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.75Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
IXFA6N120P-TRLLittelfuseTrans MOSFET N-CH 1.2KV 6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA6N120P-TRLIXYSMOSFET IXFA6N120P TRL
Produkt ist nicht verfügbar
IXFA6N120P-TRLIXYSDescription: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+15.33 EUR
Mindestbestellmenge: 800
IXFA72N20X3LittelfuseTrans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA72N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.24 EUR
11+ 6.66 EUR
Mindestbestellmenge: 9
IXFA72N20X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 245 Stücke:
Lieferzeit 14-28 Tag (e)
3+22.67 EUR
10+ 20.46 EUR
50+ 19.53 EUR
100+ 16.93 EUR
500+ 14.77 EUR
1000+ 12.53 EUR
2500+ 12.12 EUR
Mindestbestellmenge: 3
IXFA72N20X3IXYSDescription: MOSFET N-CH 200V 72A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
auf Bestellung 152 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.55 EUR
10+ 19.46 EUR
100+ 16.11 EUR
Mindestbestellmenge: 2
IXFA72N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 72A; 320W; TO263
Reverse recovery time: 84ns
Drain-source voltage: 200V
Drain current: 72A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 55nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.24 EUR
11+ 6.66 EUR
Mindestbestellmenge: 9
IXFA72N30X3LITTELFUSEDescription: LITTELFUSE - IXFA72N30X3 - Leistungs-MOSFET, n-Kanal, 300 V, 72 A, 0.019 ohm, TO-263, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 300
Dauer-Drainstrom Id: 72
hazardous: false
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 390
Gate-Source-Schwellenspannung, max.: 4.5
euEccn: NLR
Verlustleistung: 390
Bauform - Transistor: TO-263
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.019
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.019
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
IXFA72N30X3LittelfuseTrans MOSFET N-CH 300V 72A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA72N30X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263
Mounting: SMD
Case: TO263
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFA72N30X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 1130 Stücke:
Lieferzeit 14-28 Tag (e)
3+23.43 EUR
10+ 20.57 EUR
50+ 20.33 EUR
100+ 17.37 EUR
500+ 16.87 EUR
1000+ 16.17 EUR
2500+ 14.27 EUR
Mindestbestellmenge: 3
IXFA72N30X3IXYSDescription: MOSFET N-CH 300V 72A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 69 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.56 EUR
10+ 20.2 EUR
Mindestbestellmenge: 2
IXFA72N30X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO263
Mounting: SMD
Case: TO263
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 100ns
Kind of package: tube
Drain current: 72A
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Produkt ist nicht verfügbar
IXFA72N30X3-TRLIXYSMOSFET IXFA72N30X3 TRL
Produkt ist nicht verfügbar
IXFA76N15T2IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXFA76N15T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.51 EUR
50+ 4.15 EUR
Mindestbestellmenge: 11
IXFA76N15T2IXYSDescription: MOSFET N-CH 150V 76A TO263
Produkt ist nicht verfügbar
IXFA76N15T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
Mindestbestellmenge: 11
IXFA76N15T2-TRLIXYSDescription: MOSFET N-CH 150V 76A TO263
Produkt ist nicht verfügbar
IXFA7N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
14+ 5.12 EUR
15+ 4.83 EUR
Mindestbestellmenge: 11
IXFA7N100PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFA7N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 7 A, 1.9 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 300W
Gate-Source-Schwellenspannung, max.: 6V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Polar HiPerFET
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 1.9ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.9ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
IXFA7N100PLittelfuseTrans MOSFET N-CH 1KV 7A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA7N100PIXYSMOSFET 7 Amps 1000V
auf Bestellung 300 Stücke:
Lieferzeit 405-419 Tag (e)
4+15 EUR
10+ 12.84 EUR
50+ 11.65 EUR
Mindestbestellmenge: 4
IXFA7N100PIXYSDescription: MOSFET N-CH 1000V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
auf Bestellung 498 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.87 EUR
50+ 11.87 EUR
100+ 10.62 EUR
Mindestbestellmenge: 2
IXFA7N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
14+ 5.12 EUR
15+ 4.83 EUR
Mindestbestellmenge: 11
IXFA7N100P-TRLIXYSMOSFET IXFA7N100P TRL
Produkt ist nicht verfügbar
IXFA7N100P-TRLIXYSDescription: MOSFET N-CH 1000V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
Produkt ist nicht verfügbar
IXFA7N100P-TRLLittelfuseTrans MOSFET N-CH 1KV 7A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA7N60P3IXYSMOSFET 600V 7A
Produkt ist nicht verfügbar
IXFA7N60P3IXYSDescription: MOSFET N-CH 600V 7A TO263
Produkt ist nicht verfügbar
IXFA7N80PLittelfuseTrans MOSFET N-CH 800V 7A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA7N80PIXYSMOSFET 7 Amps 800V 1.44 Rds
Produkt ist nicht verfügbar
IXFA7N80PIXYSDescription: MOSFET N-CH 800V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 1357 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.15 EUR
50+ 7.26 EUR
100+ 6.22 EUR
500+ 5.53 EUR
1000+ 4.73 EUR
Mindestbestellmenge: 3
IXFA7N80PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.51 EUR
17+ 4.2 EUR
50+ 2.62 EUR
Mindestbestellmenge: 13
IXFA7N80PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.51 EUR
Mindestbestellmenge: 13
IXFA7N80P-TRLIXYSDescription: MOSFET N-CH 800V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
IXFA7N80P-TRLIXYSMOSFET IXFA7N80P TRL
Produkt ist nicht verfügbar
IXFA80N25X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO263
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.3 EUR
10+ 7.36 EUR
Mindestbestellmenge: 7
IXFA80N25X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO263
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 120ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.3 EUR
10+ 7.36 EUR
Mindestbestellmenge: 7
IXFA80N25X3IXYSMOSFET 250V/80A Ultra Junct ion X3-Class MOSFET
auf Bestellung 1650 Stücke:
Lieferzeit 14-28 Tag (e)
IXFA80N25X3IXYSDescription: MOSFET N-CH 250V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
auf Bestellung 246 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.46 EUR
10+ 19.27 EUR
100+ 16.06 EUR
Mindestbestellmenge: 2
IXFA80N25X3LittelfuseTrans MOSFET N-CH 250V 80A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA80N25X3-TRLIXYSMOSFET MOSFET DISC X4
auf Bestellung 796 Stücke:
Lieferzeit 14-28 Tag (e)
3+25.25 EUR
10+ 22.8 EUR
25+ 21.76 EUR
100+ 18.88 EUR
500+ 16.46 EUR
800+ 13.99 EUR
2400+ 13.49 EUR
Mindestbestellmenge: 3
IXFA80N25X3-TRLIXYSDescription: MOSFET N-CH 250V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+14.35 EUR
Mindestbestellmenge: 800
IXFA80N25X3-TRLLittelfuseTrans MOSFET N-CH 250V 80A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
IXFA80N25X3-TRLIXYSDescription: MOSFET N-CH 250V 80A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
auf Bestellung 1609 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.75 EUR
10+ 19.52 EUR
100+ 16.26 EUR
Mindestbestellmenge: 2
IXFA80N25X3.LITTELFUSEDescription: LITTELFUSE - IXFA80N25X3. - MOSFET, N-CH, 250V, 80A, TO-263
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 250V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 390W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: HiPERFET X3 Series
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.016ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
IXFA80N25X3TRLIXYSDescription: MOSFET N-CH 250V 80A X3CLASS TO-
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
IXFA80N25X3TRLIXYSDescription: MOSFET N-CH 250V 80A X3CLASS TO-
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
IXFA8N50P3IXYSDescription: MOSFET N-CH 500V 8A TO-263AA
Produkt ist nicht verfügbar
IXFA8N50P3IXYSMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
Produkt ist nicht verfügbar
IXFA8N65X2IXYSMOSFET 650V/8A TO-263
Produkt ist nicht verfügbar
IXFA8N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 105ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 444 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.87 EUR
28+ 2.59 EUR
30+ 2.43 EUR
50+ 2.36 EUR
Mindestbestellmenge: 25
IXFA8N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 105ns
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.87 EUR
28+ 2.59 EUR
30+ 2.43 EUR
50+ 2.36 EUR
Mindestbestellmenge: 25
IXFA8N85XHVIXYSIXFA8N85XHV SMD N channel transistors
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.55 EUR
12+ 6.12 EUR
50+ 6.11 EUR
Mindestbestellmenge: 10
IXFA8N85XHVIXYSMOSFET 850V/8A U-Junc X-Cla ss Power MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-28 Tag (e)
IXFA90N20X3IXYSDescription: MOSFET N-CH 200V 90A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
auf Bestellung 816 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.63 EUR
50+ 18.87 EUR
100+ 16.88 EUR
500+ 14.89 EUR
Mindestbestellmenge: 2
IXFA90N20X3LittelfuseTrans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA90N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.97 EUR
9+ 7.98 EUR
10+ 7.68 EUR
Mindestbestellmenge: 8
IXFA90N20X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 34 Stücke:
Lieferzeit 14-28 Tag (e)
3+23.79 EUR
10+ 21.24 EUR
50+ 18.72 EUR
100+ 16.98 EUR
250+ 16.77 EUR
Mindestbestellmenge: 3
IXFA90N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 85ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
8+8.97 EUR
9+ 7.98 EUR
10+ 7.68 EUR
Mindestbestellmenge: 8
IXFA90N20X3-TRLLittelfuseTrans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA90N20X3-TRLIXYSDescription: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Produkt ist nicht verfügbar
IXFA90N20X3-TRLLittelfuseTrans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXFA90N20X3TRLIXYSMOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2
Produkt ist nicht verfügbar
IXFA90N20X3TRLIXYSDescription: MOSFET N-CH 200V 90A TO263
Produkt ist nicht verfügbar
IXFB100N50PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 100A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
IXFB100N50PLittelfuseTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264
Produkt ist nicht verfügbar
IXFB100N50PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 100A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB100N50PIXYSMOSFET 100 Amps 500V 0.05 Ohms Rds
auf Bestellung 293 Stücke:
Lieferzeit 14-28 Tag (e)
1+73.27 EUR
10+ 66.4 EUR
25+ 64.58 EUR
IXFB100N50PLittelfuseTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264
Produkt ist nicht verfügbar
IXFB100N50PIXYSDescription: MOSFET N-CH 500V 100A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
auf Bestellung 529 Stücke:
Lieferzeit 21-28 Tag (e)
1+72.75 EUR
25+ 60.31 EUR
100+ 56.54 EUR
IXFB100N50PLittelfuseTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264
Produkt ist nicht verfügbar
IXFB100N50P                                       497         
auf Bestellung 1080 Stücke:
Lieferzeit 21-28 Tag (e)
IXFB100N50Q3IXYSMOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A
Produkt ist nicht verfügbar
IXFB100N50Q3IXYSDescription: MOSFET N-CH 500V 100A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
1+102.88 EUR
10+ 96 EUR
IXFB100N50Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Mounting: THT
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1.56kW
Kind of channel: enhanced
Gate charge: 255nC
Kind of package: tube
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXFB100N50Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Mounting: THT
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1.56kW
Kind of channel: enhanced
Gate charge: 255nC
Kind of package: tube
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB100N50 IXYS08+
auf Bestellung 1540 Stücke:
Lieferzeit 21-28 Tag (e)
IXFB110N60P3LittelfuseTrans MOSFET N-CH 600V 110A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB110N60P3IXYSDescription: MOSFET N-CH 600V 110A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Produkt ist nicht verfügbar
IXFB110N60P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
IXFB110N60P3LittelfuseTrans MOSFET N-CH 600V 110A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB110N60P3IXYSMOSFET 600V 110A 0.056Ohm PolarP3 Power MOSFET
auf Bestellung 498 Stücke:
Lieferzeit 14-28 Tag (e)
1+59.28 EUR
25+ 49.17 EUR
50+ 46.64 EUR
100+ 45.14 EUR
250+ 42.82 EUR
500+ 41.6 EUR
IXFB110N60P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB120N50P2LittelfuseTrans MOSFET N-CH 500V 120A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB120N50P2IXYSMOSFET PolarP2 Power MOSFET
Produkt ist nicht verfügbar
IXFB120N50P2IXYSDescription: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
IXFB132N50P3IXYSMOSFET 500V 132A 0.039Ohm PolarP3 Power MOSFET
auf Bestellung 272 Stücke:
Lieferzeit 14-28 Tag (e)
1+58.11 EUR
10+ 51.64 EUR
25+ 48.15 EUR
50+ 46.64 EUR
100+ 45.14 EUR
250+ 44.38 EUR
500+ 41.6 EUR
IXFB132N50P3
Produktcode: 94706		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXFB132N50P3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFB132N50P3 - Leistungs-MOSFET, n-Kanal, 500 V, 132 A, 0.039 ohm, TO-264, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500
Dauer-Drainstrom Id: 132
Qualifikation: -
Verlustleistung Pd: 1.89
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 1.89
Bauform - Transistor: TO-264
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.039
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.039
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFB132N50P3IXYSDescription: MOSFET N-CH 500V 132A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
Produkt ist nicht verfügbar
IXFB132N50P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB132N50P3LittelfuseTrans MOSFET N-CH 500V 132A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB132N50P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
IXFB150N65X2IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
3+32.79 EUR
Mindestbestellmenge: 3
IXFB150N65X2LittelfuseTrans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB150N65X2LittelfuseTrans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB150N65X2IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.79 EUR
Mindestbestellmenge: 3
IXFB150N65X2LittelfuseTrans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
3+53.03 EUR
5+ 49.66 EUR
10+ 43.83 EUR
25+ 38.17 EUR
100+ 34.85 EUR
Mindestbestellmenge: 3
IXFB150N65X2IXYSMOSFET MOSFET 650V/150A Ultra Junction X2
auf Bestellung 393 Stücke:
Lieferzeit 14-28 Tag (e)
1+77.71 EUR
10+ 73.24 EUR
25+ 64.43 EUR
50+ 63.49 EUR
100+ 59.33 EUR
IXFB150N65X2LITTELFUSEDescription: LITTELFUSE - IXFB150N65X2 - Leistungs-MOSFET, n-Kanal, 650 V, 150 A, 0.017 ohm, PLUS264, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 150A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 1.56kW
Bauform - Transistor: PLUS264
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe X2-Class HiPerFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.017ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
IXFB150N65X2LittelfuseTrans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
3+53.03 EUR
5+ 49.66 EUR
10+ 43.83 EUR
25+ 38.17 EUR
100+ 34.85 EUR
Mindestbestellmenge: 3
IXFB150N65X2IXYSDescription: MOSFET N-CH 650V 150A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20400 pF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 21-28 Tag (e)
1+82.24 EUR
25+ 68.16 EUR
IXFB170N30PLittelfuseTrans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
5+31.83 EUR
10+ 29.07 EUR
25+ 27.01 EUR
Mindestbestellmenge: 5
IXFB170N30PIXYSMOSFET Polar Power MOSFET HiPerFET
auf Bestellung 15 Stücke:
Lieferzeit 14-28 Tag (e)
1+83.02 EUR
10+ 73.76 EUR
25+ 68.8 EUR
50+ 67.6 EUR
100+ 66.43 EUR
250+ 59.57 EUR
500+ 58.03 EUR
IXFB170N30PLittelfuseTrans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB170N30PIXYSDescription: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar
IXFB170N30PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+32.89 EUR
Mindestbestellmenge: 3
IXFB170N30PLittelfuseTrans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB170N30PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.89 EUR
Mindestbestellmenge: 3
IXFB210N20PIXYSDescription: MOSFET N-CH 200V 210A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
1+82.42 EUR
25+ 68.34 EUR
IXFB210N20PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 210A
Power dissipation: 1.5kW
Case: PLUS264™
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB210N20PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 210A
Power dissipation: 1.5kW
Case: PLUS264™
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFB210N20PIXYSMOSFET 210 Amps 200V 0.0105 Rds
Produkt ist nicht verfügbar
IXFB210N30P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Reverse recovery time: 250ns
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 268nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS264™
Produkt ist nicht verfügbar
IXFB210N30P3LittelfuseTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB210N30P3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFB210N30P3 - Leistungs-MOSFET, n-Kanal, 300 V, 210 A, 0.0145 ohm, TO-264, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 300V
rohsCompliant: YES
Dauer-Drainstrom Id: 210A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 1.89kW
Bauform - Transistor: TO-264
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0145ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
IXFB210N30P3IXYSMOSFET N-Channel: Power MOSFET w/Fast Diode
auf Bestellung 651 Stücke:
Lieferzeit 14-28 Tag (e)
1+73.87 EUR
10+ 65.65 EUR
25+ 61.26 EUR
50+ 59.33 EUR
100+ 57.43 EUR
250+ 55.04 EUR
IXFB210N30P3LittelfuseTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB210N30P3LittelfuseTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB210N30P3IXYSDescription: MOSFET N-CH 300V 210A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
1+75.22 EUR
10+ 66.83 EUR
IXFB210N30P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Reverse recovery time: 250ns
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 268nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS264™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB300N10PIXYSMOSFET POLAR PWR MOSFET 100V, 300A
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
1+83.51 EUR
10+ 77.04 EUR
100+ 71.81 EUR
IXFB300N10PLittelfuseTrans MOSFET N-CH 100V 300A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB300N10PIXYSDescription: MOSFET N-CH 100V 300A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Produkt ist nicht verfügbar
IXFB300N10PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
2+ 35.75 EUR
IXFB300N10PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 1.5kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 279nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXFB300N10PLittelfuseTrans MOSFET N-CH 100V 300A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB30N120PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFB30N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 30 A, 0.35 ohm, PLUS264, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 30
Qualifikation: -
Verlustleistung Pd: 1.25
Gate-Source-Schwellenspannung, max.: 6.5
Verlustleistung: 1.25
Bauform - Transistor: PLUS264
Anzahl der Pins: 3
Produktpalette: Polar HiPerFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.35
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.35
SVHC: No SVHC (16-Jan-2020)
Produkt ist nicht verfügbar
IXFB30N120PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB30N120PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
IXFB30N120PIXYSMOSFET 30 Amps 1200V 0.35 Rds
auf Bestellung 801 Stücke:
Lieferzeit 14-28 Tag (e)
1+113 EUR
10+ 101.37 EUR
25+ 91.34 EUR
50+ 89.88 EUR
100+ 87.88 EUR
IXFB30N120PLittelfuseTrans MOSFET N-CH 1.2KV 30A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB30N120PIXYSDescription: MOSFET N-CH 1200V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
auf Bestellung 317 Stücke:
Lieferzeit 21-28 Tag (e)
1+112.97 EUR
25+ 94.66 EUR
100+ 88.35 EUR
IXFB30N120Q2IXYSDescription: MOSFET N-CH 1200V 30A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
IXFB38N100Q2IXYSDescription: MOSFET N-CH 1000V 38A PLUS264
Produkt ist nicht verfügbar
IXFB38N100Q2IXYSMOSFET 38 Amps 1000V 0.25 Rds
Produkt ist nicht verfügbar
IXFB38N100Q2LittelfuseTrans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB38N100Q2IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXFB40N110PIXYSDescription: MOSFET N-CH 1100V 40A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
auf Bestellung 240 Stücke:
Lieferzeit 21-28 Tag (e)
1+118.98 EUR
25+ 99.7 EUR
100+ 93.06 EUR
IXFB40N110PIXYSMOSFET 40 Amps 1100V 0.2600 Rds
Produkt ist nicht verfügbar
IXFB40N110PLittelfuseTrans MOSFET N-CH 1.1KV 40A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB40N110Q3IXYSIXFB40N110Q3 THT N channel transistors
Produkt ist nicht verfügbar
IXFB40N110Q3IXYSDescription: MOSFET N-CH 1100V 40A PLUS264
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
1+134.76 EUR
10+ 125.72 EUR
IXFB40N110Q3IXYSMOSFET MSFT N-CH HIPERFET-Q3 3&44
auf Bestellung 10 Stücke:
Lieferzeit 14-28 Tag (e)
1+124.12 EUR
10+ 115.86 EUR
25+ 110.97 EUR
IXFB40N110Q3LittelfuseTrans MOSFET N-CH 1.1KV 40A
Produkt ist nicht verfügbar
IXFB44N100PIXYSMOSFET 44 Amps 1000V 0.22 Rds
auf Bestellung 839 Stücke:
Lieferzeit 835-849 Tag (e)
1+76.7 EUR
10+ 68.17 EUR
IXFB44N100PLittelfuseTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB44N100PLittelfuseTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB44N100PLittelfuseTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB44N100PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFB44N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 44 A, 0.22 ohm, PLUS264, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1
Dauer-Drainstrom Id: 44
Qualifikation: -
Verlustleistung Pd: 1.25
Gate-Source-Schwellenspannung, max.: 6.5
Verlustleistung: 1.25
Bauform - Transistor: PLUS264
Anzahl der Pins: 3
Produktpalette: Polar HiPerFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.22
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.22
SVHC: No SVHC (16-Jan-2020)
Produkt ist nicht verfügbar
IXFB44N100P
Produktcode: 199488		Transistoren > MOSFET N-CH
erwartet 10 Stück:
10 Stück - erwartet 16.05.2024
IXFB44N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB44N100PIXYSDescription: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
IXFB44N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
IXFB44N100Q3LittelfuseTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB44N100Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB44N100Q3IXYSDescription: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Produkt ist nicht verfügbar
IXFB44N100Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFB44N100Q3IXYSMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A
auf Bestellung 147 Stücke:
Lieferzeit 14-28 Tag (e)
1+110.19 EUR
25+ 92.35 EUR
100+ 86.19 EUR
250+ 83.41 EUR
IXFB44N100Q3LittelfuseTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
5+35.65 EUR
25+ 32.03 EUR
50+ 30.71 EUR
Mindestbestellmenge: 5
IXFB44N100Q3LittelfuseTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB44N100Q3LittelfuseTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
5+35.65 EUR
25+ 32.03 EUR
50+ 30.71 EUR
Mindestbestellmenge: 5
IXFB50N80Q2IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXFB50N80Q2IXYSDescription: MOSFET N-CH 800V 50A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
IXFB50N80Q2IXYSMOSFET 50 Amps 800V
Produkt ist nicht verfügbar
IXFB50N80Q2LittelfuseTrans MOSFET N-CH 800V 50A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB50N80Q2IXYS07+
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
IXFB52N90PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
Produkt ist nicht verfügbar
IXFB52N90PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFB52N90P - Leistungs-MOSFET, n-Kanal, 900 V, 52 A, 0.16 ohm, PLUS264, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 52
Qualifikation: -
Verlustleistung Pd: 1.25
Gate-Source-Schwellenspannung, max.: 3.5
Verlustleistung: 1.25
Bauform - Transistor: PLUS264
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.16
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.16
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFB52N90PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB52N90PLittelfuseTrans MOSFET N-CH 900V 52A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB52N90PIXYSDescription: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
IXFB52N90PIXYSMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Produkt ist nicht verfügbar
IXFB52N90PLittelfuseTrans MOSFET N-CH 900V 52A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB60N80PLittelfuseTrans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB60N80PIXYSDescription: MOSFET N-CH 800V 60A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
auf Bestellung 110 Stücke:
Lieferzeit 21-28 Tag (e)
1+68.15 EUR
25+ 56.49 EUR
100+ 52.96 EUR
IXFB60N80P
Produktcode: 154209		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXFB60N80PIXYSMOSFET 60 Amps 800V 0.14 Rds
auf Bestellung 75 Stücke:
Lieferzeit 757-771 Tag (e)
1+68.59 EUR
10+ 60.97 EUR
25+ 56.86 EUR
50+ 55.09 EUR
100+ 53.33 EUR
250+ 49.76 EUR
500+ 49.19 EUR
IXFB60N80PLittelfuseTrans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB60N80PLittelfuseTrans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB60N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
IXFB60N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB62N80Q3IXYSMOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A
auf Bestellung 12 Stücke:
Lieferzeit 14-28 Tag (e)
1+103.14 EUR
10+ 91.94 EUR
25+ 88.27 EUR
50+ 87.44 EUR
100+ 79.07 EUR
250+ 78.08 EUR
IXFB62N80Q3LittelfuseTrans MOSFET N-CH 800V 62A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB62N80Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Drain current: 62A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
Power dissipation: 1.56kW
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXFB62N80Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Drain current: 62A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Reverse recovery time: 300ns
Power dissipation: 1.56kW
Gate charge: 0.27µC
Polarisation: unipolar
Technology: HiPerFET™; Q3-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
IXFB62N80Q3IXYSDescription: MOSFET N-CH 800V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Produkt ist nicht verfügbar
IXFB70N100XLittelfuseX-Class Hiperfet Power MOSFET
Produkt ist nicht verfügbar
IXFB70N100XIXYSDescription: MOSFET N-CH 1000V 70A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
Power Dissipation (Max): 1785W (Tc)
Vgs(th) (Max) @ Id: 6V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)
1+124.28 EUR
25+ 104.16 EUR
100+ 97.21 EUR
IXFB70N100XIXYSMOSFET 1000V 70A PLUS264 Power MOSFET
auf Bestellung 8 Stücke:
Lieferzeit 14-28 Tag (e)
1+125.19 EUR
10+ 97.92 EUR
IXFB70N60Q2IXYS
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
IXFB70N60Q2IXYSDescription: MOSFET N-CH 600V 70A PLUS264
auf Bestellung 41 Stücke:
Lieferzeit 21-28 Tag (e)
1+83.72 EUR
10+ 77.2 EUR
IXFB70N60Q2IXYSMOSFET 70 Amps 600V
Produkt ist nicht verfügbar
IXFB70N60QZIXYS09+
auf Bestellung 109 Stücke:
Lieferzeit 21-28 Tag (e)
IXFB72N55Q2IXYSDescription: MOSFET N-CH 550V 72A PLUS264
Produkt ist nicht verfügbar
IXFB72N55Q2IXYSMOSFET 72 Amps 550V 0.07 Rds
Produkt ist nicht verfügbar
IXFB80N50Q2IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXFB80N50Q2IXYSDescription: MOSFET N-CH 500V 80A PLUS264
Produkt ist nicht verfügbar
IXFB80N50Q2IXYSMOSFET 80 Amps 500V 0.06 Rds
Produkt ist nicht verfügbar
IXFB80N50Q2LittelfuseTrans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB80N50Q2
Produktcode: 22118		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXFB82N60PLittelfuseTrans MOSFET N-CH 600V 82A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB82N60PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFB82N60PIXYSDescription: MOSFET N-CH 600V 82A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 220 Stücke:
Lieferzeit 21-28 Tag (e)
1+72.75 EUR
25+ 60.31 EUR
100+ 56.54 EUR
IXFB82N60PLittelfuseTrans MOSFET N-CH 600V 82A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB82N60PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXFB82N60PIXYSMOSFET 82 Amps 600V 0.75 Ohm Rds
Produkt ist nicht verfügbar
IXFB82N60Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
2+43.21 EUR
Mindestbestellmenge: 2
IXFB82N60Q3IXYSDescription: MOSFET N-CH 600V 82A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)
1+100.39 EUR
IXFB82N60Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
2+43.21 EUR
Mindestbestellmenge: 2
IXFB82N60Q3IXYSMOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
Produkt ist nicht verfügbar
IXFB82N60Q3LittelfuseTrans MOSFET N-CH 600V 82A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB90N85XIXYSMOSFET 850V/90A Ultra Junction X-Class
Produkt ist nicht verfügbar
IXFB90N85XLittelfuseTrans MOSFET N-CH 850V 90A 3-Pin(3+Tab) PLUS 264
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
3+71.42 EUR
10+ 63.72 EUR
Mindestbestellmenge: 3
IXFB90N85XLittelfuseTrans MOSFET N-CH 850V 90A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB90N85XIXYSIXFB90N85X THT N channel transistors
Produkt ist nicht verfügbar
IXFB90N85XIXYSDescription: MOSFET N-CH 850V 90A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 500mA, 10V
Power Dissipation (Max): 1785W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 21-28 Tag (e)
1+105.51 EUR
10+ 98.43 EUR
IXFC10N80PIXYSDescription: MOSFET N-CH 800V 5A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IXFC110N10PIXYSDescription: MOSFET N-CH 100V 60A ISOPLUS220
Packaging: Box
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 55A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
Produkt ist nicht verfügbar
IXFC12N80PIXYSDescription: MOSFET N-CH 800V 7A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
IXFC13N50IXYSDescription: MOSFET N-CH 500V 12A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
IXFC14N60PIXYSDescription: MOSFET N-CH 600V 8A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
IXFC14N80PIXYSDescription: MOSFET N-CH 800V 8A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 7A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
IXFC15N80QIXYSDescription: MOSFET N-CH 800V 13A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Produkt ist nicht verfügbar
IXFC16N50PIXYSDescription: MOSFET N-CH 500V 10A ISOPLUS220
Produkt ist nicht verfügbar
IXFC16N80PIXYSDescription: MOSFET N-CH 800V 9A ISOPLUS220
Produkt ist nicht verfügbar
IXFC20N80PIXYSDescription: MOSFET N-CH 800V 11A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V
Produkt ist nicht verfügbar
IXFC22N60PIXYSDescription: MOSFET N-CH 600V 12A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
IXFC24N50IXYSDescription: MOSFET N-CH 500V 21A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IXFC24N50QIXYSDescription: MOSFET N-CH 500V 21A ISOPLUS220
Packaging: Bulk
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IXFC26N50IXYSDescription: MOSFET N-CH 500V 23A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IXFC26N50PIXYSDescription: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
IXFC30N60PLittelfuseTrans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) ISOPLUS 220
Produkt ist nicht verfügbar
IXFC30N60PIXYSDescription: MOSFET N-CH 600V 15A ISOPLUS220
Produkt ist nicht verfügbar
IXFC30N60PIXYSMOSFET 600V 30A
Produkt ist nicht verfügbar
IXFC36N50PIXYSDescription: MOSFET N-CH 500V 19A ISOPLUS220
Produkt ist nicht verfügbar
IXFC36N50PLittelfuseTrans MOSFET N-CH Si 500V 19A 3-Pin(3+Tab) ISOPLUS 220
Produkt ist nicht verfügbar
IXFC40N30QIXYSDescription: MOSFET N-CH 300V ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
Produkt ist nicht verfügbar
IXFC52N30PIXYSDescription: MOSFET N-CH 300V 24A ISOPLUS220
Packaging: Box
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Produkt ist nicht verfügbar
IXFC60N20IXYSDescription: MOSFET N-CH 200V 60A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 30A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Produkt ist nicht verfügbar
IXFC74N20PIXYSDescription: MOSFET N-CH 200V 35A ISOPLUS220
Produkt ist nicht verfügbar
IXFC80N08IXYSDescription: MOSFET N-CH 80V 80A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
IXFC80N085IXYSDescription: MOSFET N-CH 85V 80A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
IXFC80N10IXYSDescription: MOSFET N-CH 100V 80A ISOPLUS220
Produkt ist nicht verfügbar
IXFC80N10IXYSMOSFET 100 Amps 100V 0.0125 Rds
Produkt ist nicht verfügbar
IXFC96N15PIXYSDescription: MOSFET N-CH 150V 42A ISOPLUS220
Produkt ist nicht verfügbar
IXFC96N15PIXYSMOSFET 42 Amps 150V 0.024 Rds
Produkt ist nicht verfügbar
IXFD15N100-8XIXYSDescription: MOSFET N-CH
Produkt ist nicht verfügbar
IXFD23N60Q-72IXYSDescription: MOSFET N-CHANNEL 600V DIE
Produkt ist nicht verfügbar
IXFD24N50Q-72IXYSDescription: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
IXFD26N50Q-72IXYSDescription: MOSFET N-CHANNEL 500V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
IXFD26N60Q-8XQIXYSDescription: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
IXFD40N30Q-72IXYSDescription: MOSFET N-CHANNEL 300V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
Produkt ist nicht verfügbar
IXFE180N10IXYSDescription: MOSFET N-CH 100V 176A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 176A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Produkt ist nicht verfügbar
IXFE180N20IXYSDiscrete Semiconductor Modules 180 Amps 200V 0.01 Rds
Produkt ist nicht verfügbar
IXFE180N20IXYSDescription: MOSFET N-CH 200V 158A SOT227B
Produkt ist nicht verfügbar
IXFE23N100IXYSDescription: MOSFET N-CH 1000V 21A SOT227B
Packaging: Box
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 11.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
IXFE24N100IXYSDiscrete Semiconductor Modules 22 Amps 1000V 0.39 Rds
Produkt ist nicht verfügbar
IXFE24N100IXYSMODULE
auf Bestellung 59 Stücke:
Lieferzeit 21-28 Tag (e)
IXFE24N100IXYSDescription: MOSFET N-CH 1000V 22A ISOPLUS227
Produkt ist nicht verfügbar
IXFE34N100IXYSDescription: MOSFET N-CH 1000V 30A ISOPLUS227
Produkt ist nicht verfügbar
IXFE36N100IXYSDiscrete Semiconductor Modules 33 Amps 1000V 0.24 Rds
Produkt ist nicht verfügbar
IXFE36N100IXYSDescription: MOSFET N-CH 1000V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 18A, 10V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Produkt ist nicht verfügbar
IXFE39N90IXYSDiscrete Semiconductor Modules 34 Amps 900V 0.22 Rds
Produkt ist nicht verfügbar
IXFE39N90IXYSDescription: MOSFET N-CH 900V 34A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Produkt ist nicht verfügbar
IXFE44N50QIXYSDescription: MOSFET N-CH 500V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
IXFE44N50QIXYSDiscrete Semiconductor Modules 44 Amps 500V 0.12 Rds
Produkt ist nicht verfügbar
IXFE44N50QD2IXYSDiscrete Semiconductor Modules 44 Amps 500V 0.12 Rds
Produkt ist nicht verfügbar
IXFE44N50QD2IXYSDescription: MOSFET N-CH 500V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar
IXFE44N50QD3IXYSDescription: MOSFET N-CH 500V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar
IXFE44N60IXYSDiscrete Semiconductor Modules 41 Amps 600V 0.13 Rds
Produkt ist nicht verfügbar
IXFE44N60IXYSDescription: MOSFET N-CH 600V 41A SOT-227B
Produkt ist nicht verfügbar
IXFE48N50QIXYSDescription: MOSFET N-CH 500V 41A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
IXFE48N50QIXYSDiscrete Semiconductor Modules 41 Amps 500V 0.11 Rds
Produkt ist nicht verfügbar
IXFE48N50QD2IXYSDescription: MOSFET N-CH 500V 41A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar
IXFE48N50QD2IXYSDiscrete Semiconductor Modules 41 Amps 500V 0.11 Rds
Produkt ist nicht verfügbar
IXFE48N50QD3IXYSDescription: MOSFET N-CH 500V 41A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar
IXFE50N50IXYSDescription: MOSFET N-CH 500V 47A SOT227B
Packaging: Box
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 25A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
IXFE55N50IXYSDescription: MOSFET N-CH 500V 47A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
IXFE55N50IXYSDiscrete Semiconductor Modules 52 Amps 500V 0.08 Rds
Produkt ist nicht verfügbar
IXFE73N30QIXYSDescription: MOSFET N-CH 300V 66A SOT-227B
Produkt ist nicht verfügbar
IXFE73N30QIXYSDiscrete Semiconductor Modules 66 Amps 300V 0.046 Rds
Produkt ist nicht verfügbar
IXFE80N50IXYSDescription: MOSFET N-CH 500V 72A SOT-227B
Produkt ist nicht verfügbar
IXFE80N50IXYSDiscrete Semiconductor Modules 72 Amps 500V 0.055 Rds
Produkt ist nicht verfügbar
IXFF24N100IXYSDescription: MOSFET N-CH 1000V 22A I4-PAC
Produkt ist nicht verfügbar
IXFG55N50IXYSDescription: MOSFET N-CH 500V 48A ISO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: ISO264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
IXFG55N50IXYSMOSFET 48 Amps 500V 0.1 Rds
Produkt ist nicht verfügbar
IXFH100N25PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Technology: HiPerFET™; Polar™
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 185nC
Kind of channel: enhanced
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXFH100N25PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Technology: HiPerFET™; Polar™
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 185nC
Kind of channel: enhanced
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
2+ 35.75 EUR
4+ 17.88 EUR
IXFH100N25PLittelfuseTrans MOSFET N-CH 250V 100A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH100N25PIXYSMOSFET 100 Amps 250V 0.027 Rds
Produkt ist nicht verfügbar
IXFH100N25PIXYSDescription: MOSFET N-CH 250V 100A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 21-28 Tag (e)
1+29.04 EUR
30+ 23.51 EUR
IXFH100N25PLittelfuseTrans MOSFET N-CH 250V 100A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH100N30X3IXYSDescription: MOSFET N-CH 300V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
auf Bestellung 28 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.69 EUR
IXFH100N30X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Technology: HiPerFET™; X3-Class
Mounting: THT
Reverse recovery time: 130ns
Case: TO247-3
Kind of package: tube
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 300V
Drain current: 100A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXFH100N30X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Technology: HiPerFET™; X3-Class
Mounting: THT
Reverse recovery time: 130ns
Case: TO247-3
Kind of package: tube
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 300V
Drain current: 100A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH100N30X3LittelfuseTrans MOSFET N-CH 300V 100A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH100N30X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 27 Stücke:
Lieferzeit 14-28 Tag (e)
2+31.93 EUR
10+ 29.15 EUR
30+ 25.84 EUR
60+ 25.51 EUR
120+ 24.05 EUR
270+ 22.49 EUR
510+ 21.42 EUR
Mindestbestellmenge: 2
IXFH102N15TIXYSDescription: MOSFET N-CH 150V 102A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
Produkt ist nicht verfügbar
IXFH102N15TIXYSMOSFET 102 Amps 0V
Produkt ist nicht verfügbar
IXFH10N100IXYSMOSFET 1KV 10A
Produkt ist nicht verfügbar
IXFH10N100IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
IXFH10N100Ixys CorporationTrans MOSFET N-CH Si 1KV 10A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH10N100IXYSDescription: MOSFET N-CH 1KV 10A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
IXFH10N100PLittelfuseTrans MOSFET N-CH 1KV 10A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH10N100PIXYSDescription: MOSFET N-CH 1000V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
Produkt ist nicht verfügbar
IXFH10N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Technology: HiPerFET™; Polar™
Mounting: THT
Reverse recovery time: 300ns
Case: TO247-3
Kind of package: tube
Power dissipation: 380W
Polarisation: unipolar
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 10A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH10N100PLittelfuseTrans MOSFET N-CH 1KV 10A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH10N100PIXYSMOSFET 10 Amps 1000V
auf Bestellung 576 Stücke:
Lieferzeit 336-350 Tag (e)
3+19.01 EUR
10+ 18.82 EUR
30+ 15.03 EUR
Mindestbestellmenge: 3
IXFH10N100PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH10N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 10 A, 1.4 ohm, TO-247AD, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1
Dauer-Drainstrom Id: 10
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 380
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3
Produktpalette: Polar HiPerFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 1.4
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 6.5
SVHC: No SVHC (16-Jan-2020)
Produkt ist nicht verfügbar
IXFH10N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Technology: HiPerFET™; Polar™
Mounting: THT
Reverse recovery time: 300ns
Case: TO247-3
Kind of package: tube
Power dissipation: 380W
Polarisation: unipolar
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 10A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXFH10N100QIXYSMOSFET 12 Amps 1000V 1.05 Rds
Produkt ist nicht verfügbar
IXFH10N100QIXYSDescription: MOSFET N-CH 1000V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
IXFH10N80PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH10N80P - Leistungs-MOSFET, n-Kanal, 800 V, 10 A, 1.1 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Polar HiPerFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.1ohm
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH10N80PIXYSDescription: MOSFET N-CH 800V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 72 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.88 EUR
30+ 10.99 EUR
Mindestbestellmenge: 2
IXFH10N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Technology: HiPerFET™; Polar™
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 10A
Type of transistor: N-MOSFET
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
IXFH10N80PLittelfuseTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH10N80PIXYSMOSFET 10 Amps 800V 1.1 Rds
auf Bestellung 175 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.99 EUR
10+ 12.12 EUR
30+ 11.75 EUR
120+ 10.5 EUR
270+ 9.91 EUR
510+ 8.66 EUR
1020+ 7.46 EUR
Mindestbestellmenge: 4
IXFH10N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Technology: HiPerFET™; Polar™
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 10A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
10+ 7.15 EUR
Mindestbestellmenge: 9
IXFH10N80PLittelfuseTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH10N90IXYSDescription: MOSFET N-CH 900V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IXFH10N90IXYSMOSFET 10 Amps 900V
Produkt ist nicht verfügbar
IXFH110N10PIXYSMOSFET 110 Amps 100V 0.015 Rds
auf Bestellung 100 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.56 EUR
10+ 17.99 EUR
30+ 14.82 EUR
Mindestbestellmenge: 3
IXFH110N10PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.61 EUR
12+ 6.16 EUR
13+ 5.82 EUR
Mindestbestellmenge: 9
IXFH110N10PLittelfuseTrans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH110N10PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.61 EUR
12+ 6.16 EUR
13+ 5.82 EUR
Mindestbestellmenge: 9
IXFH110N10PLittelfuseTrans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH110N10PIXYSDescription: MOSFET N-CH 100V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
Produkt ist nicht verfügbar
IXFH110N10PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH110N10P - Leistungs-MOSFET, PolarFET, n-Kanal, 100 V, 110 A, 0.015 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 110
hazardous: false
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 480
Gate-Source-Schwellenspannung, max.: 5
euEccn: NLR
Verlustleistung: 480
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.015
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.015
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFH110N15T2IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH110N15T2LittelfuseTrans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH110N15T2IXYSDescription: MOSFET N-CH 150V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
auf Bestellung 660 Stücke:
Lieferzeit 21-28 Tag (e)
30+18.96 EUR
Mindestbestellmenge: 30
IXFH110N15T2IXYSMOSFET 110 Amps 150V
Produkt ist nicht verfügbar
IXFH110N15T2IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
Produkt ist nicht verfügbar
IXFH110N25TIXYSMOSFET 110 Amps 0V
auf Bestellung 29 Stücke:
Lieferzeit 14-28 Tag (e)
IXFH110N25TIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.51 EUR
9+ 8.08 EUR
10+ 7.98 EUR
30+ 7.79 EUR
Mindestbestellmenge: 8
IXFH110N25TIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 273 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.51 EUR
9+ 8.08 EUR
10+ 7.98 EUR
30+ 7.79 EUR
Mindestbestellmenge: 8
IXFH110N25TIXYSDescription: MOSFET N-CH 250V 110A TO247AD
auf Bestellung 480 Stücke:
Lieferzeit 21-28 Tag (e)
2+24.83 EUR
10+ 22.42 EUR
100+ 18.56 EUR
Mindestbestellmenge: 2
IXFH11N80IXYSDescription: MOSFET N-CH 800V 11A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IXFH11N80IXYSMOSFET 11 Amps 800V
Produkt ist nicht verfügbar
IXFH120N15PLittelfuseTrans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
60+8.06 EUR
Mindestbestellmenge: 60
IXFH120N15PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.78 EUR
10+ 7.36 EUR
Mindestbestellmenge: 9
IXFH120N15PIXYSMOSFET 120 Amps 150V 0.016 Rds
auf Bestellung 290 Stücke:
Lieferzeit 14-28 Tag (e)
3+23.27 EUR
10+ 19.94 EUR
30+ 18.1 EUR
120+ 16.61 EUR
270+ 15.65 EUR
510+ 14.66 EUR
1020+ 13.52 EUR
Mindestbestellmenge: 3
IXFH120N15PLittelfuseTrans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
30+8.07 EUR
Mindestbestellmenge: 30
IXFH120N15PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH120N15P - Leistungs-MOSFET, PolarFET, n-Kanal, 150 V, 120 A, 0.016 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 120
Qualifikation: -
Verlustleistung Pd: 600
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 600
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.016
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.016
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFH120N15PLittelfuseTrans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH120N15PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.78 EUR
10+ 7.36 EUR
Mindestbestellmenge: 9
IXFH120N15PLittelfuseTrans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH120N15PIXYSDescription: MOSFET N-CH 150V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
auf Bestellung 280 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.11 EUR
30+ 18.45 EUR
120+ 16.51 EUR
Mindestbestellmenge: 2
IXFH120N20PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH120N20P - Leistungs-MOSFET, n-Kanal, 200 V, 120 A, 0.022 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 714W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.022ohm
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH120N20PLittelfuseTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH120N20PLittelfuseTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH120N20PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 100ns
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.76 EUR
7+ 10.7 EUR
Mindestbestellmenge: 5
IXFH120N20PIXYSDescription: MOSFET N-CH 200V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 176 Stücke:
Lieferzeit 21-28 Tag (e)
1+29.04 EUR
30+ 23.51 EUR
120+ 22.12 EUR
IXFH120N20PLittelfuseTrans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH120N20PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.76 EUR
7+ 10.7 EUR
Mindestbestellmenge: 5
IXFH120N20PIXYSMOSFET 120 Amps 200V 0.022 Rds
Produkt ist nicht verfügbar
IXFH120N25TIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.67 EUR
6+ 12.76 EUR
Mindestbestellmenge: 5
IXFH120N25TIXYSDescription: MOSFET N-CH 250V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 60A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 1050 Stücke:
Lieferzeit 21-28 Tag (e)
30+33.69 EUR
Mindestbestellmenge: 30
IXFH120N25TIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.67 EUR
6+ 12.76 EUR
10+ 12.27 EUR
Mindestbestellmenge: 5
IXFH120N25TIXYSMOSFET Trench HiperFETs Power MOSFETs
Produkt ist nicht verfügbar
IXFH120N25TLittelfuseTrans MOSFET N-CH 250V 120A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH120N25X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.49 EUR
6+ 11.98 EUR
10+ 11.97 EUR
30+ 11.51 EUR
Mindestbestellmenge: 5
IXFH120N25X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 1219 Stücke:
Lieferzeit 14-28 Tag (e)
2+31.93 EUR
10+ 28.13 EUR
30+ 25.84 EUR
60+ 25.82 EUR
120+ 24.31 EUR
270+ 22.39 EUR
510+ 21.14 EUR
Mindestbestellmenge: 2
IXFH120N25X3LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXFH120N25X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.49 EUR
6+ 11.98 EUR
10+ 11.97 EUR
Mindestbestellmenge: 5
IXFH120N25X3IXYSDescription: MOSFET N-CH 250V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
auf Bestellung 1016 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.69 EUR
30+ 25.66 EUR
120+ 24.15 EUR
510+ 21.88 EUR
IXFH120N25X3LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXFH120N30X3LittelfuseTrans MOSFET N-CH 300V 120A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH120N30X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.46 EUR
5+ 14.64 EUR
Mindestbestellmenge: 4
IXFH120N30X3IXYSDescription: MOSFET N-CH 300V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1376 pF @ 25 V
Produkt ist nicht verfügbar
IXFH120N30X3LittelfuseTrans MOSFET N-CH 300V 120A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH120N30X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
4+21.46 EUR
5+ 14.64 EUR
Mindestbestellmenge: 4
IXFH120N30X3LITTELFUSEDescription: LITTELFUSE - IXFH120N30X3 - Leistungs-MOSFET, n-Kanal, 300 V, 120 A, 0.0086 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 300V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 735W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe X3-Class HiPerFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0086ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH120N30X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 10 Stücke:
Lieferzeit 666-680 Tag (e)
2+42.48 EUR
10+ 39.03 EUR
30+ 37.41 EUR
120+ 32.97 EUR
Mindestbestellmenge: 2
IXFH12N100Ixys CorporationTrans MOSFET N-CH Si 1KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N100IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH12N100 - Leistungs-MOSFET, n-Kanal, 1 kV, 12 A, 1.05 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1
Dauer-Drainstrom Id: 12
Qualifikation: -
Verlustleistung Pd: 300
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 300
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 1.05
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 1.05
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFH12N100IXYSMOSFET 1KV 12A
auf Bestellung 206 Stücke:
Lieferzeit 14-28 Tag (e)
2+36.17 EUR
10+ 31.88 EUR
30+ 30.99 EUR
60+ 29.28 EUR
120+ 27.56 EUR
270+ 26.7 EUR
510+ 24.99 EUR
Mindestbestellmenge: 2
IXFH12N100LittelfuseTrans MOSFET N-CH Si 1KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N100IXYSDescription: MOSFET N-CH 1000V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
IXFH12N100FLittelfuseTrans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N100FLittelfuseTrans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N100FIXYSDescription: MOSFET N-CH 1000V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
1+27.74 EUR
30+ 22.46 EUR
120+ 21.14 EUR
IXFH12N100FIxys CorporationTrans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N100FIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH12N100F - Leistungs-MOSFET, n-Kanal, 1 kV, 12 A, 1.05 ohm, TO-247AD, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1
Dauer-Drainstrom Id: 12
Qualifikation: -
Verlustleistung Pd: 300
Gate-Source-Schwellenspannung, max.: 3
Verlustleistung: 300
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 1.05
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 1.05
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFH12N100FIXYSMOSFET 12 Amps 1000V 1.05 Rds
Produkt ist nicht verfügbar
IXFH12N100PIXYSDescription: MOSFET N-CH 1000V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Produkt ist nicht verfügbar
IXFH12N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH12N100PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH12N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 12 A, 1.05 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1
Dauer-Drainstrom Id: 12
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 436
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: Polar HiPerFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 1.05
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 6.5
SVHC: No SVHC (16-Jan-2020)
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH12N100PIXYSMOSFET 12 Amps 1000V
auf Bestellung 1102 Stücke:
Lieferzeit 736-750 Tag (e)
3+22.28 EUR
10+ 22.26 EUR
30+ 17.78 EUR
Mindestbestellmenge: 3
IXFH12N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
IXFH12N100PLittelfuseTrans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N100PLittelfuseTrans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N100QLittelfuseTrans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N100QIXYSDescription: MOSFET N-CH 1000V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
IXFH12N120LittelfuseTrans MOSFET N-CH Si 1.2KV 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N120IXYSMOSFET 12 Amps 1200V 1.3 Rds
Produkt ist nicht verfügbar
IXFH12N120IXYSDescription: MOSFET N-CH 1200V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
IXFH12N120PLittelfuseTrans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
30+23.54 EUR
Mindestbestellmenge: 30
IXFH12N120PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH12N120P - Leistungs-MOSFET, n-Kanal, 1.2 kV, 12 A, 1.35 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 12
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 543
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 1.35
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 6.5
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH12N120PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH12N120PLittelfuseTrans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH12N120PLittelfuseTrans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
270+23.5 EUR
Mindestbestellmenge: 270
IXFH12N120PLittelfuseTrans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH12N120PIXYSMOSFET 12 Amps 1200V 1.15 Rds
auf Bestellung 1160 Stücke:
Lieferzeit 701-715 Tag (e)
2+40.64 EUR
10+ 37.34 EUR
Mindestbestellmenge: 2
IXFH12N120PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH12N120PIXYSDescription: MOSFET N-CH 1200V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
IXFH12N50FIxys CorporationTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247AD
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
11+14.14 EUR
Mindestbestellmenge: 11
IXFH12N50FLittelfuseTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N50FIXYSMOSFET IXFH12N50F 500V 12A HIPERFET
Produkt ist nicht verfügbar
IXFH12N50FIXYSDescription: MOSFET N-CH 500V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Produkt ist nicht verfügbar
IXFH12N65X2IXYSMOSFET 650V/12A TO-247
Produkt ist nicht verfügbar
IXFH12N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH12N80PIXYSDescription: MOSFET N-CH 800V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
IXFH12N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH12N80PIXYSMOSFET DIODE Id12 BVdass800
Produkt ist nicht verfügbar
IXFH12N80PLittelfuseTrans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH12N90IXYSMOSFET 900V 12A
Produkt ist nicht verfügbar
IXFH12N90IXYSDescription: MOSFET N-CH 900V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IXFH12N90PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 12A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH12N90PIXYSDescription: MOSFET N-CH 900V 12A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 2172 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.45 EUR
30+ 18.73 EUR
120+ 16.76 EUR
510+ 14.78 EUR
1020+ 13.31 EUR
Mindestbestellmenge: 2
IXFH12N90PLittelfuseTrans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N90PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 12A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH12N90PIXYSMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
auf Bestellung 392 Stücke:
Lieferzeit 14-28 Tag (e)
3+23.61 EUR
10+ 20.25 EUR
30+ 18.38 EUR
120+ 16.85 EUR
270+ 16.2 EUR
Mindestbestellmenge: 3
IXFH12N90PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH12N90P - Leistungs-MOSFET, n-Kanal, 900 V, 12 A, 0.9 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 12
Qualifikation: -
Verlustleistung Pd: 380
Gate-Source-Schwellenspannung, max.: 3.5
Verlustleistung: 380
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.9
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.9
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFH12N90PLittelfuseTrans MOSFET N-CH 900V 12A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH12N90QIXYSMOSFET
Produkt ist nicht verfügbar
IXFH130N15X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
IXFH130N15X3LittelfuseTrans MOSFET N-CH 150V 130A
Produkt ist nicht verfügbar
IXFH130N15X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
2+ 35.75 EUR
5+ 14.3 EUR
30+ 8.75 EUR
IXFH130N15X3IXYSDescription: MOSFET N-CH 150V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
auf Bestellung 1031 Stücke:
Lieferzeit 21-28 Tag (e)
1+27.22 EUR
30+ 21.75 EUR
120+ 19.46 EUR
510+ 17.17 EUR
1020+ 15.45 EUR
IXFH130N15X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
2+30.47 EUR
10+ 27.53 EUR
30+ 26.26 EUR
120+ 22.78 EUR
510+ 19.84 EUR
1020+ 16.87 EUR
2520+ 16.64 EUR
Mindestbestellmenge: 2
IXFH13N100IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXFH13N100IXYSDescription: MOSFET N-CH 1000V 12.5A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
IXFH13N100IXYSMOSFET 13 Amps 1000V 0.9 Rds
Produkt ist nicht verfügbar
IXFH13N50IXYSDescription: MOSFET N-CH 500V 13A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
IXFH13N50 Transistor
Produktcode: 79556		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXFH13N80Ixys CorporationTrans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH13N80IXYSMOSFET 800V 13A
Produkt ist nicht verfügbar
IXFH13N80IXYSDescription: MOSFET N-CH 800V 13A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IXFH13N80QIXYSDescription: MOSFET N-CH 800V 13A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Produkt ist nicht verfügbar
IXFH13N80QIXYSMOSFET 13 Amps 800V 0.8 Rds
Produkt ist nicht verfügbar
IXFH13N80QIXYS09+ SOT23
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
IXFH13N90IXYSMOSFET 13 Amps 900V 0.8 Rds
Produkt ist nicht verfügbar
IXFH13N90IXYSDescription: MOSFET N-CH 900V 13A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
IXFH140N10PIXYSMOSFET 140 Amps 100V 0.011 Rds
auf Bestellung 2595 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.43 EUR
10+ 17.13 EUR
30+ 14.74 EUR
120+ 13.83 EUR
270+ 13.52 EUR
Mindestbestellmenge: 3
IXFH140N10PLittelfuseTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH140N10PLittelfuseTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-247
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
25+6.25 EUR
26+ 5.87 EUR
Mindestbestellmenge: 25
IXFH140N10PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.04 EUR
10+ 7.48 EUR
Mindestbestellmenge: 7
IXFH140N10PIXYSDescription: MOSFET N-CH 100V 140A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.11 EUR
Mindestbestellmenge: 2
IXFH140N10PLittelfuseTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-247
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
25+6.25 EUR
26+ 5.87 EUR
Mindestbestellmenge: 25
IXFH140N10PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.04 EUR
10+ 7.48 EUR
Mindestbestellmenge: 7
IXFH140N20X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.49 EUR
6+ 12.26 EUR
7+ 11.58 EUR
30+ 11.43 EUR
Mindestbestellmenge: 5
IXFH140N20X3IXYSDescription: MOSFET N-CH 200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.69 EUR
IXFH140N20X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.49 EUR
6+ 12.26 EUR
7+ 11.58 EUR
30+ 11.43 EUR
Mindestbestellmenge: 5
IXFH140N20X3LittelfuseTrans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH140N20X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 200 Stücke:
Lieferzeit 14-28 Tag (e)
2+31.93 EUR
10+ 29.15 EUR
30+ 25.84 EUR
60+ 25.79 EUR
120+ 24.8 EUR
270+ 22.49 EUR
510+ 21.42 EUR
Mindestbestellmenge: 2
IXFH140N20X3LittelfuseTrans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH140N20X3LittelfuseTrans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH14N100IXYSDescription: MOSFET N-CH 1000V 14A TO247AD
Produkt ist nicht verfügbar
IXFH14N100QIXYSDescription: MOSFET N-CH 1000V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFH14N100Q2Ixys CorporationTrans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH14N100Q2IXYSMOSFET 14 Amps 1000V 0.90 Rds
Produkt ist nicht verfügbar
IXFH14N100Q2LittelfuseTrans MOSFET N-CH 1KV 14A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH14N100Q2IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH14N100Q2 - Leistungs-MOSFET, n-Kanal, 1 kV, 14 A, 0.9 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1
Dauer-Drainstrom Id: 14
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 500
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.9
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFH14N100Q2IXYSDescription: MOSFET N-CH 1000V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
IXFH14N60PIXYSDescription: MOSFET N-CH 600V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.07 EUR
Mindestbestellmenge: 2
IXFH14N60PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH14N60PIXYSMOSFET 600V 14A
auf Bestellung 17 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.17 EUR
10+ 12.27 EUR
30+ 11.91 EUR
120+ 9.88 EUR
Mindestbestellmenge: 4
IXFH14N60PLittelfuseTrans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH14N60PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH14N60P3IXYSDescription: MOSFET N-CH 600V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
IXFH14N60P3IXYSMOSFET Polar3 HiPerFETs Power MOSFETs
auf Bestellung 18 Stücke:
Lieferzeit 14-28 Tag (e)
IXFH14N60P3LittelfuseTrans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH14N80IXYSDescription: MOSFET N-CH 800V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Produkt ist nicht verfügbar
IXFH14N80IXYSMOSFET 14 Amps 800V 0.7 Rds
Produkt ist nicht verfügbar
IXFH14N80PLittelfuseTrans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH14N80PIXYSDescription: MOSFET N-CH 800V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 330 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.49 EUR
30+ 14.75 EUR
120+ 13.2 EUR
Mindestbestellmenge: 2
IXFH14N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.84 EUR
12+ 5.99 EUR
Mindestbestellmenge: 9
IXFH14N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.84 EUR
12+ 5.99 EUR
Mindestbestellmenge: 9
IXFH14N80PIXYSMOSFET DIODE Id14 BVdass800
auf Bestellung 492 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.62 EUR
10+ 15.96 EUR
30+ 14.48 EUR
120+ 13.29 EUR
270+ 13.13 EUR
Mindestbestellmenge: 3
IXFH14N85XIXYSMOSFET MSFT N-CH ULTRA JNCT X3&44
Produkt ist nicht verfügbar
IXFH14N85XIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
IXFH14N85XLittelfuseTrans MOSFET N-CH 850V 14A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH14N85XIXYSDescription: MOSFET N-CH 850V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
auf Bestellung 562 Stücke:
Lieferzeit 21-28 Tag (e)
2+20.2 EUR
30+ 16.12 EUR
120+ 14.42 EUR
510+ 12.73 EUR
Mindestbestellmenge: 2
IXFH14N85XIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH150N15PLittelfuseTrans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH150N15PLittelfuseTrans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH150N15PIXYSDescription: MOSFET N-CH 150V 150A TO247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 182 Stücke:
Lieferzeit 21-28 Tag (e)
1+30.58 EUR
10+ 28.1 EUR
100+ 23.74 EUR
IXFH150N15PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH150N15PLittelfuseTrans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-247
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
12+13.52 EUR
13+ 12.22 EUR
Mindestbestellmenge: 12
IXFH150N15PIXYSMOSFET 170 Amps 150V 0.013 Rds
auf Bestellung 213 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.19 EUR
10+ 29.56 EUR
30+ 28.34 EUR
120+ 24.99 EUR
510+ 22.2 EUR
1020+ 20.77 EUR
Mindestbestellmenge: 2
IXFH150N15PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH150N15PLittelfuseTrans MOSFET N-CH 150V 150A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH150N17TIXYSMOSFET 150 Amps 175V
Produkt ist nicht verfügbar
IXFH150N17TIXYSDescription: MOSFET N-CH 175V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 175 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
Produkt ist nicht verfügbar
IXFH150N17T(Transistor)
Produktcode: 48320		Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
IXFH150N17T2LittelfuseTrans MOSFET N-CH 175V 150A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH150N17T2IXYSDescription: MOSFET N-CH 175V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 175 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.84 EUR
Mindestbestellmenge: 2
IXFH150N17T2
Produktcode: 177347		Verschiedene Bauteile > Verschiedene Bauteile 1
Produkt ist nicht verfügbar
IXFH150N17T2LittelfuseTrans MOSFET N-CH 175V 150A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH150N17T2LITTELFUSEDescription: LITTELFUSE - IXFH150N17T2 - Leistungs-MOSFET, n-Kanal, 175 V, 150 A, 0.012 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 175V
rohsCompliant: YES
Dauer-Drainstrom Id: 150A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 880W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pins
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.012ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH150N17T2IXYSMOSFET 175V 150A
auf Bestellung 72 Stücke:
Lieferzeit 14-28 Tag (e)
3+24.49 EUR
10+ 22.15 EUR
120+ 18.64 EUR
Mindestbestellmenge: 3
IXFH150N17T2LittelfuseTrans MOSFET N-CH 175V 150A 3-Pin(3+Tab) TO-247AD
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
17+8.9 EUR
25+ 8.02 EUR
Mindestbestellmenge: 17
IXFH150N20TIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
30+ 16.3 EUR
Mindestbestellmenge: 3
IXFH150N20TIXYSDescription: MOSFET N-CH 200V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
1+45.27 EUR
IXFH150N20TIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
IXFH150N20TLittelfuseTrans MOSFET N-CH 200V 150A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH150N20TIXYSMOSFET Trench HiperFETs Power MOSFETs
auf Bestellung 17 Stücke:
Lieferzeit 14-28 Tag (e)
2+45.58 EUR
10+ 40.22 EUR
Mindestbestellmenge: 2
IXFH150N25X3LittelfuseTrans MOSFET N-CH 250V 150A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH150N25X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXFH150N25X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
30+ 14.4 EUR
Mindestbestellmenge: 3
IXFH150N25X3IXYSDescription: MOSFET N-CH 250V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
auf Bestellung 1200 Stücke:
Lieferzeit 21-28 Tag (e)
1+40.01 EUR
30+ 32.41 EUR
120+ 30.5 EUR
510+ 27.64 EUR
IXFH150N25X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
IXFH150N25X3HVIXYSDescription: MOSFET N-CH
Produkt ist nicht verfügbar
IXFH150N30X3LittelfuseTrans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH150N30X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH150N30X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
IXFH150N30X3LittelfuseTrans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH150N30X3LittelfuseTrans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH150N30X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXFH150N30X3IXYSDescription: MOSFET N-CH 300V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 290 Stücke:
Lieferzeit 21-28 Tag (e)
1+46.88 EUR
30+ 38.88 EUR
120+ 36.45 EUR
IXFH15N100IXYSMOSFET 15 Amps 1000V 0.7 Rds
Produkt ist nicht verfügbar
IXFH15N100IXYSDescription: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFH15N100IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXFH15N100PIXYSDescription: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
Produkt ist nicht verfügbar
IXFH15N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH15N100PLittelfuseTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH15N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH15N100PLittelfuseTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH15N100PIXYSMOSFET 15 Amps 1000V 0.76 Rds
Produkt ist nicht verfügbar
IXFH15N100QIXYSDescription: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFH15N100Q3IXYSDescription: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Produkt ist nicht verfügbar
IXFH15N100Q3LittelfuseTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
30+20.19 EUR
60+ 18.14 EUR
120+ 16.5 EUR
180+ 15.14 EUR
Mindestbestellmenge: 30
IXFH15N100Q3IXYSMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A
auf Bestellung 300 Stücke:
Lieferzeit 579-593 Tag (e)
2+40.92 EUR
10+ 36.06 EUR
30+ 35.07 EUR
60+ 33.12 EUR
120+ 31.17 EUR
Mindestbestellmenge: 2
IXFH15N100Q3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH15N100Q3 - Leistungs-MOSFET, n-Kanal, 1 kV, 15 A, 1.05 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1
Dauer-Drainstrom Id: 15
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 690
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: Q3-Class HiperFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 1.05
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 6.5
SVHC: No SVHC (16-Jan-2020)
Produkt ist nicht verfügbar
IXFH15N100Q3LittelfuseTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH15N100Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
4+22.01 EUR
5+ 15.02 EUR
Mindestbestellmenge: 4
IXFH15N100Q3LittelfuseTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH15N100Q3LittelfuseTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
300+32.5 EUR
Mindestbestellmenge: 300
IXFH15N100Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)
4+22.01 EUR
5+ 15.02 EUR
Mindestbestellmenge: 4
IXFH15N60IXYSMOSFET 15 Amps 600V
Produkt ist nicht verfügbar
IXFH15N60LittelfuseTrans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH15N60IXYSDescription: MOSFET N-CH 600V 15A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFH15N80IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH15N80 - Leistungs-MOSFET, n-Kanal, 800 V, 15 A, 0.6 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 800
Dauer-Drainstrom Id: 15
Qualifikation: -
Verlustleistung Pd: 300
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 300
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.6
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.6
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFH15N80LittelfuseTrans MOSFET N-CH Si 800V 15A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH15N80IXYSDescription: MOSFET N-CH 800V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 25 V
Produkt ist nicht verfügbar
IXFH15N80IXYSMOSFET 800V 15A
Produkt ist nicht verfügbar
IXFH15N80LittelfuseTrans MOSFET N-CH Si 800V 15A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH15N80LittelfuseTrans MOSFET N-CH Si 800V 15A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH15N80QIXYSDescription: MOSFET N-CH 800V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Produkt ist nicht verfügbar
IXFH15N80QLittelfuseTrans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH15N80QIXYSMOSFET 800V 15A
Produkt ist nicht verfügbar
IXFH15N80QIxys CorporationTrans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH15N80Q
Produktcode: 104305		Transistoren > MOSFET N-CH
ZCODE: 8541290010
Produkt ist nicht verfügbar
IXFH15N80QLittelfuseTrans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247AD
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
7+22.62 EUR
10+ 20.81 EUR
25+ 18.25 EUR
Mindestbestellmenge: 7
IXFH15N80QLittelfuseTrans MOSFET N-CH 800V 15A 3-Pin(3+Tab) TO-247AD
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
7+22.62 EUR
10+ 20.81 EUR
25+ 18.25 EUR
Mindestbestellmenge: 7
IXFH1606
Produktcode: 128639		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
IXFH160N15TIXYSDescription: MOSFET N-CH 150V 160A TO247AD
Produkt ist nicht verfügbar
IXFH160N15TLittelfuseTrans MOSFET N-CH 150V 160A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH160N15TIXYSMOSFET 160 Amps 150V
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
2+27.9 EUR
10+ 23.95 EUR
30+ 18.41 EUR
Mindestbestellmenge: 2
IXFH160N15T2IXYS/LittelfuseN-канальний ПТ; Udss, В = 150; Id = 160 А; Ciss, пФ @ Uds, В = 15000 @ 25; Qg, нКл = 253 @ 10 В; Rds = 9 мОм @ 80 A, 10 В; Ugs(th) = 4,5 В @ 1000 мкА; Р, Вт = 880 Вт; Тексп, °C = -55...+175; Тип монт. = вивідний; TO-247-3
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
1+6.92 EUR
10+ 5.97 EUR
100+ 5.25 EUR
IXFH160N15T2IXYSDescription: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
auf Bestellung 16 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.4 EUR
10+ 21.15 EUR
Mindestbestellmenge: 2
IXFH160N15T2IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
IXFH160N15T2IXYSMOSFET Trench T2 HiperFET Power MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
3+20.93 EUR
10+ 19.32 EUR
120+ 15.11 EUR
270+ 13.57 EUR
510+ 13.55 EUR
Mindestbestellmenge: 3
IXFH160N15T2
Produktcode: 126302		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXFH160N15T2LittelfuseTrans MOSFET N-CH 150V 160A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH160N15T2IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
3+ 23.84 EUR
7+ 10.21 EUR
Mindestbestellmenge: 2
IXFH16N120PIXYSMOSFET 1
auf Bestellung 300 Stücke:
Lieferzeit 385-399 Tag (e)
2+49.48 EUR
10+ 46.2 EUR
30+ 40.07 EUR
60+ 40.04 EUR
120+ 37.67 EUR
510+ 36.87 EUR
Mindestbestellmenge: 2
IXFH16N120PLittelfuseTrans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH16N120PIxys CorporationTrans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH16N120PLITTELFUSEDescription: LITTELFUSE - IXFH16N120P - MOSFET, N-CH, 1.2KV, 16A, TO-247
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 16
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 660
Bauform - Transistor: TO-247
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: Polar HiPerFET Series
Wandlerpolarität: N Channel
Betriebswiderstand, Rds(on): 0.95
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 6.5
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXFH16N120PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 16A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH16N120PIXYSDescription: MOSFET N-CH 1200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 665 Stücke:
Lieferzeit 21-28 Tag (e)
1+49.11 EUR
30+ 39.77 EUR
120+ 37.43 EUR
510+ 33.92 EUR
IXFH16N120PLittelfuseTrans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH16N120PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 16A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH16N50PLittelfuseTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH16N50PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH16N50PIXYSDescription: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 74 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.07 EUR
30+ 11.15 EUR
Mindestbestellmenge: 2
IXFH16N50PLittelfuseTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH16N50PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
IXFH16N50PIXYSMOSFET 500V 16A
auf Bestellung 2010 Stücke:
Lieferzeit 427-441 Tag (e)
4+14.17 EUR
10+ 12.82 EUR
30+ 10.92 EUR
120+ 9.59 EUR
270+ 8.63 EUR
510+ 7.77 EUR
1020+ 7.41 EUR
Mindestbestellmenge: 4
IXFH16N50PLittelfuseTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH16N50P3IXYSDescription: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.87 EUR
30+ 11.87 EUR
120+ 10.62 EUR
Mindestbestellmenge: 2
IXFH16N50P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
IXFH16N50P3IXYSMOSFET Polar3 HiPerFET Power MOSFET
Produkt ist nicht verfügbar
IXFH16N50P3LittelfuseTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH16N50P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH16N60P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH16N60P3IXYSDescription: MOSFET N-CH 600V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
IXFH16N60P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH16N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH16N80PIXYSDescription: MOSFET N-CH 800V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
auf Bestellung 295 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.27 EUR
30+ 16.97 EUR
120+ 15.19 EUR
Mindestbestellmenge: 2
IXFH16N80PLittelfuseTrans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH16N80PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH16N80P - Leistungs-MOSFET, n-Kanal, 800 V, 16 A, 0.6 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 460W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.6ohm
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH16N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
IXFH16N80PLittelfuseTrans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH16N80PIXYSMOSFET 16 Amps 800V 0.6 Rds
auf Bestellung 300 Stücke:
Lieferzeit 336-350 Tag (e)
3+21.61 EUR
10+ 18.51 EUR
30+ 16.8 EUR
120+ 15.44 EUR
270+ 14.53 EUR
Mindestbestellmenge: 3
IXFH16N90Q
Produktcode: 157422		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXFH16N90QIXYSMOSFET 16 Amps 900V 0.65 Rds
Produkt ist nicht verfügbar
IXFH16N90QIXYSDescription: MOSFET N-CH 900V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 8A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
IXFH170N10PIXYSMOSFET 170 Amps 100V 0.009 Rds
Produkt ist nicht verfügbar
IXFH170N10PLittelfuseTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH170N10PIxys CorporationTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH170N10PIXYSDescription: MOSFET N-CH 100V 170A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 795 Stücke:
Lieferzeit 21-28 Tag (e)
1+29.04 EUR
30+ 23.51 EUR
120+ 22.12 EUR
510+ 20.05 EUR
IXFH170N10PLittelfuseTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
270+11.75 EUR
Mindestbestellmenge: 270
IXFH170N10PIxys CorporationTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH170N10PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH170N10PLittelfuseTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
30+11.77 EUR
Mindestbestellmenge: 30
IXFH170N10PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH170N10P - Leistungs-MOSFET, PolarFET, n-Kanal, 100 V, 170 A, 0.009 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 170A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 714W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 15V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.009ohm
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH170N10PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
IXFH170N10PLittelfuseTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-247AD
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH170N15X3IXYSDescription: MOSFET N-CH 150V 170A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V
Produkt ist nicht verfügbar
IXFH170N15X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH170N15X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Produkt ist nicht verfügbar
IXFH170N15X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXFH170N25X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
IXFH170N25X3IXYSMOSFET 250V/170A Ultra Junc tion X3-Class MOSFE
auf Bestellung 300 Stücke:
Lieferzeit 343-357 Tag (e)
2+49.09 EUR
10+ 43.24 EUR
30+ 42.07 EUR
60+ 39.73 EUR
120+ 37.39 EUR
Mindestbestellmenge: 2
IXFH170N25X3LITTELFUSEDescription: LITTELFUSE - IXFH170N25X3 - Leistungs-MOSFET, n-Kanal, 250 V, 170 A, 0.0061 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 250
Dauer-Drainstrom Id: 170
Qualifikation: -
MSL: -
Verlustleistung Pd: 890
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 890
Bauform - Transistor: TO-247
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: Produktreihe X3-Class HiPerFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0061
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0061
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH170N25X3LittelfuseTrans MOSFET N-CH 250V 170A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH170N25X3IXYSDescription: MOSFET N-CH 250V 170A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Produkt ist nicht verfügbar
IXFH170N25X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
30+ 17.66 EUR
Mindestbestellmenge: 3
IXFH1799IXYSMOSFET
Produkt ist nicht verfügbar
IXFH17N80QIXYSDescription: MOSFET N-CH 800V 17A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
IXFH17N80QIXYSMOSFET 17 Amps 800V 0.60 Rds
Produkt ist nicht verfügbar
IXFH180N20X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 161 Stücke:
Lieferzeit 14-28 Tag (e)
2+40.3 EUR
10+ 35.54 EUR
30+ 32.66 EUR
60+ 32.63 EUR
120+ 30.71 EUR
270+ 30.19 EUR
510+ 27.79 EUR
Mindestbestellmenge: 2
IXFH180N20X3LITTELFUSEDescription: LITTELFUSE - IXFH180N20X3 - Leistungs-MOSFET, n-Kanal, 200 V, 180 A, 0.0063 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 180A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 735W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe X3-Class HiPerFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0063ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH180N20X3LittelfuseTrans MOSFET N-CH 200V 180A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH180N20X3LittelfuseTrans MOSFET N-CH 200V 180A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH180N20X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.64 EUR
10+ 14.4 EUR
30+ 14.13 EUR
Mindestbestellmenge: 5
IXFH180N20X3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.64 EUR
10+ 14.4 EUR
Mindestbestellmenge: 5
IXFH180N20X3IXYSDescription: MOSFET N-CH 200V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
auf Bestellung 1175 Stücke:
Lieferzeit 21-28 Tag (e)
1+40.01 EUR
30+ 32.41 EUR
120+ 30.5 EUR
510+ 27.64 EUR
IXFH180N20X3LittelfuseTrans MOSFET N-CH 200V 180A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH18N100Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH18N100Q3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IXFH18N100Q3IXYSDescription: MOSFET N-CH 1000V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4890 pF @ 25 V
auf Bestellung 399 Stücke:
Lieferzeit 21-28 Tag (e)
1+49.11 EUR
30+ 39.77 EUR
120+ 37.43 EUR
IXFH18N100Q3IXYSMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
auf Bestellung 270 Stücke:
Lieferzeit 136-150 Tag (e)
2+49.45 EUR
10+ 43.58 EUR
30+ 42.38 EUR
60+ 42.09 EUR
Mindestbestellmenge: 2
IXFH18N100Q3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH18N100Q3 - Leistungs-MOSFET, n-Kanal, 1 kV, 18 A, 0.66 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 6.5V
euEccn: NLR
Verlustleistung: 830W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.66ohm
auf Bestellung 572 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH18N100Q3LittelfuseTrans MOSFET N-CH 1KV 18A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH18N60PIXYSDescription: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
IXFH18N60PLittelfuseTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH18N60PIXYSMOSFET 600V 18A
auf Bestellung 2806 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.82 EUR
10+ 12.69 EUR
30+ 10.14 EUR
120+ 9.59 EUR
270+ 9.46 EUR
510+ 9.28 EUR
1020+ 9.1 EUR
Mindestbestellmenge: 4
IXFH18N60PLittelfuseTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH18N60PLittelfuseTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH18N60PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
15+ 4.82 EUR
Mindestbestellmenge: 11
IXFH18N60PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
15+ 4.82 EUR
Mindestbestellmenge: 11
IXFH18N60XIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.65 EUR
9+ 8.02 EUR
30+ 7.89 EUR
Mindestbestellmenge: 7
IXFH18N60XIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.65 EUR
9+ 8.02 EUR
Mindestbestellmenge: 7
IXFH18N60XIXYSDescription: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Produkt ist nicht verfügbar
IXFH18N60XIXYSMOSFET DiscMSFT NCh UltrJnctn XClass TO-247AD
Produkt ist nicht verfügbar
IXFH18N65X2IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
Produkt ist nicht verfügbar
IXFH18N65X2IXYSDescription: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
300+10.17 EUR
Mindestbestellmenge: 300
IXFH18N65X2IXYSMOSFET 650V/18A TO-247
Produkt ist nicht verfügbar
IXFH18N65X2IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
IXFH18N65X3IXYSDescription: DISCRETE MOSFET 18A 650V X3 TO24
Packaging: Tube
Produkt ist nicht verfügbar
IXFH18N65X3LittelfuseLittelfuse MOSFET 18A 650V X3 TO247
Produkt ist nicht verfügbar
IXFH18N90PIXYSDescription: MOSFET N-CH 900V 18A TO247AD
auf Bestellung 1404 Stücke:
Lieferzeit 21-28 Tag (e)
1+30.16 EUR
10+ 27.72 EUR
100+ 23.41 EUR
500+ 20.83 EUR
1000+ 19.1 EUR
IXFH18N90PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 540W
Gate charge: 97nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhanced
Drain-source voltage: 900V
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH18N90PIXYSMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
auf Bestellung 2392 Stücke:
Lieferzeit 14-28 Tag (e)
2+28.63 EUR
10+ 25.25 EUR
30+ 24.54 EUR
60+ 23.17 EUR
120+ 21.81 EUR
270+ 21.11 EUR
510+ 20.59 EUR
Mindestbestellmenge: 2
IXFH18N90PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 540W
Gate charge: 97nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhanced
Drain-source voltage: 900V
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Produkt ist nicht verfügbar
IXFH18N90PLittelfuseTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH20N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH20N100PIXYSMOSFET 20 Amps 1000V 1 Rds
auf Bestellung 218 Stücke:
Lieferzeit 14-28 Tag (e)
2+30.91 EUR
10+ 27.22 EUR
30+ 26.49 EUR
60+ 25.04 EUR
120+ 23.56 EUR
270+ 22.8 EUR
510+ 21.35 EUR
Mindestbestellmenge: 2
IXFH20N100PLittelfuseTrans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH20N100PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
IXFH20N100PLittelfuseTrans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH20N100PLittelfuseTrans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH20N100PIXYSDescription: MOSFET N-CH 1000V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Produkt ist nicht verfügbar
IXFH20N50P3LittelfuseTrans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH20N50P3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH20N50P3 - Leistungs-MOSFET, n-Kanal, 500 V, 20 A, 0.3 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500
Dauer-Drainstrom Id: 20
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 380
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.3
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: No SVHC (12-Jan-2017)
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
IXFH20N50P3LittelfuseTrans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH20N50P3IXYSDescription: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 46 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.56 EUR
30+ 11.52 EUR
Mindestbestellmenge: 2
IXFH20N50P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 184 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.28 EUR
13+ 5.65 EUR
16+ 4.5 EUR
17+ 4.25 EUR
Mindestbestellmenge: 12
IXFH20N50P3IXYSMOSFET Polar3 HiPerFET Power MOSFET
Produkt ist nicht verfügbar
IXFH20N50P3IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.28 EUR
13+ 5.65 EUR
16+ 4.5 EUR
17+ 4.25 EUR
Mindestbestellmenge: 12
IXFH20N60IXYSDescription: MOSFET N-CH 600V 20A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
IXFH20N60IXYSMOSFET 600V 20A
Produkt ist nicht verfügbar
IXFH20N60QIXYSDescription: MOSFET N-CH 600V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
IXFH20N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 86nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.31 EUR
9+ 8.38 EUR
10+ 7.92 EUR
Mindestbestellmenge: 6
IXFH20N80PIXYSDescription: MOSFET N-CH 800V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V
Produkt ist nicht verfügbar
IXFH20N80PIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 86nC
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.31 EUR
9+ 8.38 EUR
10+ 7.92 EUR
Mindestbestellmenge: 6
IXFH20N80PLittelfuseTrans MOSFET N-CH 800V 20A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH20N80PIXYSMOSFET 20 Amps 800V 0.52 Rds
auf Bestellung 72 Stücke:
Lieferzeit 14-28 Tag (e)
3+24.57 EUR
10+ 21.09 EUR
30+ 19.14 EUR
120+ 17.52 EUR
270+ 16.38 EUR
510+ 15.99 EUR
Mindestbestellmenge: 3
IXFH20N80PLittelfuseTrans MOSFET N-CH 800V 20A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXFH20N80P (TO-247-3)
Produktcode: 107942		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXFH20N80Q
Produktcode: 129296		Transistoren > Bipolar-Transistoren NPN
Produkt ist nicht verfügbar
IXFH20N80QIXYSMOSFET 800V 20A
Produkt ist nicht verfügbar
IXFH20N80QIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXFH20N80Q - Leistungs-MOSFET, n-Kanal, 800 V, 20 A, 0.42 ohm, TO-247, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 800
Dauer-Drainstrom Id: 20
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 360
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.42
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4.5
SVHC: No SVHC (12-Jan-2017)
Produkt ist nicht verfügbar
IXFH20N80QIXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXFH20N80QIXYSDescription: MOSFET N-CH 800V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
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IXFH20N85XIXYSMOSFET 850V Ultra Junction X-Class Pwr MOSFET
Produkt ist nicht verfügbar
IXFH20N85XLittelfuseTrans MOSFET N-CH 850V 20A 3-Pin(3+Tab) TO-247AD
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IXFH20N85XIXYSIXFH20N85X THT N channel transistors
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IXFH20N85XIXYSDescription: MOSFET N-CH 850V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 271 Stücke:
Lieferzeit 21-28 Tag (e)
2+23.89 EUR
30+ 19.07 EUR
120+ 17.06 EUR
Mindestbestellmenge: 2