| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.69 EUR |
| 10+ | 30.1 EUR |
| 30+ | 28.75 EUR |
| 60+ | 27.86 EUR |
| 270+ | 27.25 EUR |
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Technische Details IXFH150N30X3 IXYS
Description: MOSFET N-CH 300V 150A TO247, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V.
Weitere Produktangebote IXFH150N30X3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFH150N30X3 | Littelfuse Inc. |
Description: MOSFET N-CH 300V 150A TO247 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFH150N30X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3 Mounting: THT Power dissipation: 890W Gate charge: 254nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 8.3mΩ Reverse recovery time: 167ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFH150N30X3 |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 150A TO247
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Description: MOSFET N-CH 300V 150A TO247
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH150N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH