IXFE23N100 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1000V 21A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Box
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Technische Details IXFE23N100 IXYS
Description: MOSFET N-CH 1000V 21A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Box.
Weitere Produktangebote IXFE23N100
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFE23N100 | Hersteller : IXYS |
 MOSFET Modules 21 Amps 1000V 0.43 Rds |
Produkt ist nicht verfügbar |