| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.69 EUR |
| 10+ | 15.68 EUR |
| 100+ | 13.07 EUR |
| 500+ | 11.65 EUR |
| 1000+ | 11.5 EUR |
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Technische Details IXFA4N100Q IXYS
Description: MOSFET N-CH 1000V 4A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-263AA (IXFA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote IXFA4N100Q nach Preis ab 11.97 EUR bis 23.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFA4N100Q | IXYS |
 Description: MOSFET N-CH 1000V 4A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFA4N100Q |
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Hersteller: IXYS
Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.1 EUR |
| 10+ | 15.99 EUR |
| 50+ | 12.95 EUR |
| 100+ | 11.97 EUR |