IXFA4N100Q Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 4A TO263
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA (IXFA)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 150W (Tc)
| Anzahl | Preis |
|---|---|
| 2+ | 14.57 EUR |
| 50+ | 8.58 EUR |
| 100+ | 7.98 EUR |
| 500+ | 7.75 EUR |
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Technische Details IXFA4N100Q Littelfuse Inc.
Description: MOSFET N-CH 1000V 4A TO263, Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AA (IXFA), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Power Dissipation (Max): 150W (Tc).
Weitere Produktangebote IXFA4N100Q nach Preis ab 9.66 EUR bis 17.39 EUR
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IXFA4N100Q | Hersteller : IXYS |
MOSFETs 4 Amps 1000V 2.8 Rds |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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