Produkte > IXYS CORPORATION > IXFH10N100
IXFH10N100

IXFH10N100 Ixys Corporation


ete_mosfets_n-channel_hiperfets_ixfh12n100_datasheet.pdf.pdf Hersteller: Ixys Corporation
Trans MOSFET N-CH Si 1KV 10A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFH10N100 Ixys Corporation

Description: MOSFET N-CH 1KV 10A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V.

Weitere Produktangebote IXFH10N100

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFH10N100 IXFH10N100 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n100_datasheet.pdf.pdf Description: MOSFET N-CH 1KV 10A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N100 IXFH10N100 Hersteller : IXYS media-3322048.pdf MOSFETs 1KV 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH