IXFH150N20T IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V
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Technische Details IXFH150N20T IXYS
Description: MOSFET N-CH 200V 150A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V.
Weitere Produktangebote IXFH150N20T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFH150N20T | IXYS |
MOSFETs Trench HiperFETs Power MOSFETs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFH150N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Power dissipation: 890W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 177nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFH150N20T |
|
Hersteller: IXYS
MOSFETs Trench HiperFETs Power MOSFETs
MOSFETs Trench HiperFETs Power MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH150N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH