
IXFH22N60P IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 338 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
9+ | 8.85 EUR |
11+ | 6.66 EUR |
30+ | 6.56 EUR |
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Technische Details IXFH22N60P IXYS
Description: MOSFET N-CH 600V 22A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Weitere Produktangebote IXFH22N60P nach Preis ab 6.56 EUR bis 13.11 EUR
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IXFH22N60P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.35Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH22N60P | Hersteller : IXYS |
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auf Bestellung 309 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH22N60P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFH22N60P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFH22N60P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 22A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
Produkt ist nicht verfügbar |