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Technische Details IXFH22N60P IXYS
Description: MOSFET N-CH 600V 22A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFH22N60P nach Preis ab 6.42 EUR bis 8.21 EUR
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IXFH22N60P | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.35Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 159 Stücke: Lieferzeit 14-21 Tag (e) |
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