IXFH36N55Q2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 550V 36A TO247AD
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Technische Details IXFH36N55Q2 IXYS
Description: MOSFET N-CH 550V 36A TO247AD, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 560W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote IXFH36N55Q2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXFH36N55Q2 | Hersteller : IXYS |
 MOSFET 36 Amps 550V 0.16 Rds |
Produkt ist nicht verfügbar |