IXFA12N65X2-TRL IXYS
Hersteller: IXYS
Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
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Technische Details IXFA12N65X2-TRL IXYS
Description: MOSFET N-CH 650V 12A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V.
Weitere Produktangebote IXFA12N65X2-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFA12N65X2-TRL | IXYS |
MOSFETs IXFA12N65X2 TRL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
IXFA12N65X2-TRL | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns Type of transistor: N-MOSFET Technology: HiPerFET™ Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 0.31Ω Mounting: SMD Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFA12N65X2-TRL |
![]() |
Hersteller: IXYS
MOSFETs IXFA12N65X2 TRL
MOSFETs IXFA12N65X2 TRL
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFA12N65X2-TRL |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH



