Technische Details IXFH13N80Q IXYS
Description: MOSFET N-CH 800V 13A TO247AD, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel.
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IXFH13N80Q | Hersteller : IXYS |
Description: MOSFET N-CH 800V 13A TO247AD Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel |
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IXFH13N80Q | Hersteller : IXYS |
 MOSFETs 13 Amps 800V 0.8 Rds |
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