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IXFH12N100

IXFH12N100 IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n100_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 1000V 12A TO247AD
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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Technische Details IXFH12N100 IXYS

Description: MOSFET N-CH 1000V 12A TO247AD, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3.

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IXFH12N100 IXFH12N100 Hersteller : IXYS media-3323205.pdf MOSFETs 1KV 12A
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