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IXFB44N100Q3

IXFB44N100Q3 IXYS


DS100307IXFB44N100Q3.pdf
Hersteller: IXYS
Description: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 300 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.41 EUR
25+55.63 EUR
100+53.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFB44N100Q3 IXYS

Description: MOSFET N-CH 1000V 44A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.

Weitere Produktangebote IXFB44N100Q3 nach Preis ab 64.96 EUR bis 80.71 EUR

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IXFB44N100Q3 IXFB44N100Q3 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFB44N100Q3_Datasheet.PDF MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/44A
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.71 EUR
10+64.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH