IXFH26N100X IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1000V 26A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 860W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Privatkunde |
|---|---|
| 1+ | 44.78 EUR |
| 30+ | 28.37 EUR |
| 60+ | 26.42 EUR |
| 120+ | 24.79 EUR |
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Technische Details IXFH26N100X IXYS
Description: MOSFET N-CH 1000V 26A TO247, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 6V @ 4mA, Power Dissipation (Max): 860W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFH26N100X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFH26N100X | IXYS |
MOSFETs 1000V 26A TO-247 Power MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFH26N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: N Drain-source voltage: 1kV Drain current: 26A Power dissipation: 860W Case: TO247-3 Gate-source voltage: 30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 113nC Kind of channel: enhancement Reverse recovery time: 220ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFH26N100X |
|
Hersteller: IXYS
MOSFETs 1000V 26A TO-247 Power MOSFET
MOSFETs 1000V 26A TO-247 Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH26N100X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 1kV; 26A; 860W; TO247-3; 220ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: N
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 113nC
Kind of channel: enhancement
Reverse recovery time: 220ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH