IXFH26N100X IXYS

Description: MOSFET N-CH 1000V 26A TO247, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 6V @ 4mA, Power Dissipation (Max): 860W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.