Weitere Produktangebote IXFH20N80P (TO-247-3) nach Preis ab 10.02 EUR bis 24.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFH20N80P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3 Case: TO247-3 Drain current: 20A Power dissipation: 500W Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 86nC On-state resistance: 0.52Ω |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH20N80P | Littelfuse Inc. |
Description: MOSFET N-CH 800V 20A TO247ADInput Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 299 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH20N80P | IXYS |
MOSFETs 20 Amps 800V 0.52 Rds |
auf Bestellung 255 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFH20N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Case: TO247-3
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Case: TO247-3
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 13.41 EUR |
| 10+ | 10.02 EUR |
| IXFH20N80P |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 20A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 800V 20A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.83 EUR |
| 30+ | 10.64 EUR |
| 120+ | 10.6 EUR |
| IXFH20N80P |
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Hersteller: IXYS
MOSFETs 20 Amps 800V 0.52 Rds
MOSFETs 20 Amps 800V 0.52 Rds
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.23 EUR |
| 10+ | 18.05 EUR |
| 120+ | 15.02 EUR |
| 510+ | 13.23 EUR |




