IXFB50N80Q2 IXYS

Description: MOSFET N-CH 800V 50A PLUS264, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS264™, Vgs(th) (Max) @ Id: 5.5V @ 8mA, Power Dissipation (Max): 1135W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.