IXFH120N25T IXYS
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXFH120N25T IXYS
Description: MOSFET N-CH 250V 120A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFH120N25T
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|---|---|---|---|---|---|
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IXFH120N25T | IXYS |
MOSFETs Trench HiperFETs Power MOSFETs |
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| IXFH120N25T |
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Hersteller: IXYS
MOSFETs Trench HiperFETs Power MOSFETs
MOSFETs Trench HiperFETs Power MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

