Technische Details IXFH14N100Q2
Description: MOSFET N-CH 1000V 14A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFH14N100Q2
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IXFH14N100Q2 | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 14A TO247ADInput Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 5.5V @ 4mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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IXFH14N100Q2 | Hersteller : IXYS |
MOSFETs 14 Amps 1000V 0.90 Rds |
Produkt ist nicht verfügbar |



