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IXFH14N100Q2


littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh14n100q2_datasheet.pdf.pdf
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Technische Details IXFH14N100Q2

Description: MOSFET N-CH 1000V 14A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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IXFH14N100Q2 IXFH14N100Q2 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh14n100q2_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 14A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH14N100Q2 IXFH14N100Q2 Hersteller : IXYS media-3319789.pdf MOSFETs 14 Amps 1000V 0.90 Rds
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