IXFA8N85XHV IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Case: TO263HV
On-state resistance: 0.85Ω
Drain current: 8A
Pulsed drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 200W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
Reverse recovery time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.18 EUR |
| 12+ | 6.01 EUR |
| 50+ | 5.88 EUR |
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Technische Details IXFA8N85XHV IXYS
Description: MOSFET N-CH 850V 8A TO263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-263AA (IXFA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V.
Weitere Produktangebote IXFA8N85XHV nach Preis ab 6.01 EUR bis 7.18 EUR
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IXFA8N85XHV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Mounting: SMD Case: TO263HV On-state resistance: 0.85Ω Drain current: 8A Pulsed drain current: 16A Gate-source voltage: ±30V Power dissipation: 200W Drain-source voltage: 850V Kind of channel: enhancement Technology: HiPerFET™; X-Class Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC Reverse recovery time: 125ns |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA8N85XHV | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 850V 8A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFA8N85XHV | Hersteller : IXYS |
MOSFET 850V/8A U-Junc X-Cla ss Power MOSFET |
Produkt ist nicht verfügbar |