Technische Details IXFH24N50
- MOSFET, N, TO-247
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:500V
- Cont Current Id:24A
- On State Resistance:0.23ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:TO-247
- Termination Type:Through Hole
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max On State Resistance:0.23ohm
- Max Repetitive Avalanche Energy:30mJ
- Max Voltage Vds:500V
- Max Voltage Vgs th:4V
- Min Junction Temperature, Tj:-55`C
- N-channel Gate Charge:135nC
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation:300W
- Power Dissipation Pd:300W
- Pulse Current Idm:96A
- Rate of Voltage Change dv / dt:5V/ns
- Typ Reverse Recovery Time, trr:250ns
- Weight:6g
- Transistor Case Style:TO-247
Weitere Produktangebote IXFH24N50
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXFH24N50 | Hersteller : IXYS |
 MODULE |
auf Bestellung 94 Stücke: Lieferzeit 21-28 Tag (e) |