Technische Details IXFK27N80Q Littelfuse
Description: MOSFET N-CH 800V 27A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V.
Weitere Produktangebote IXFK27N80Q
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IXFK27N80Q | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFK27N80Q | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFK27N80Q | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK27N80Q | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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![]() |
IXFK27N80Q | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |