IXFN360N15T2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 150V 310A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 1+ | 72.64 EUR |
| 10+ | 54.83 EUR |
| 100+ | 51.48 EUR |
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Technische Details IXFN360N15T2 IXYS
Description: MOSFET N-CH 150V 310A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V, Power Dissipation (Max): 1070W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXFN360N15T2 |
MOSFET, VDSS= 150V, ID(cont)= 310A, Single, SOT227 Група товару: Транзистори Од. вим: шт |
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IXFN360N15T2 | Hersteller : IXYS |
MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET |
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IXFN360N15T2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Drain-source voltage: 150V Drain current: 310A Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4mΩ Power dissipation: 1.07kW Gate-source voltage: ±30V Pulsed drain current: 900A Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhancement Case: SOT227B Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
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