IXBK75N170 IXYS
Hersteller: IXYSDescription: IGBT 1700V 200A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: TO-264AA
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 80.06 EUR |
| 25+ | 56.93 EUR |
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Technische Details IXBK75N170 IXYS
Description: IGBT 1700V 200A TO-264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.5 µs, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A, Supplier Device Package: TO-264AA, Gate Charge: 350 nC, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 580 A, Power - Max: 1040 W.
Weitere Produktangebote IXBK75N170 nach Preis ab 86.08 EUR bis 93.24 EUR
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IXBK75N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264 Case: TO264 Mounting: THT Kind of package: tube Gate charge: 0.35µC Turn-on time: 277ns Turn-off time: 840ns Power dissipation: 1.04kW Collector current: 75A Pulsed collector current: 580A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT |
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