IXBH24N170 IXYS
Hersteller: IXYS
Description: IGBT 1700V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
Description: IGBT 1700V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.53 EUR |
| 30+ | 21.91 EUR |
| 120+ | 20.11 EUR |
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Technische Details IXBH24N170 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3, Gate-emitter voltage: ±20V, Collector current: 24A, Power dissipation: 250W, Pulsed collector current: 230A, Collector-emitter voltage: 1.7kV, Technology: BiMOSFET™, Case: TO247-3, Features of semiconductor devices: high voltage, Type of transistor: IGBT, Kind of package: tube, Mounting: THT, Turn-on time: 190ns, Gate charge: 0.14µC, Turn-off time: 1285ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBH24N170 nach Preis ab 23.44 EUR bis 71.5 EUR
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IXBH24N170 | Hersteller : IXYS |
 IGBTs BIMOSFETS 1700V 60A |
auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBH24N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Gate-emitter voltage: ±20V Collector current: 24A Power dissipation: 250W Pulsed collector current: 230A Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Case: TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT Kind of package: tube Mounting: THT Turn-on time: 190ns Gate charge: 0.14µC Turn-off time: 1285ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBH24N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Gate-emitter voltage: ±20V Collector current: 24A Power dissipation: 250W Pulsed collector current: 230A Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Case: TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT Kind of package: tube Mounting: THT Turn-on time: 190ns Gate charge: 0.14µC Turn-off time: 1285ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBH24N170(Transistor ) Produktcode: 43528
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