IXBH24N170 (Transistor)
Produktcode: 43528
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Zolltarifnummer: 8541 29 00 10
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Weitere Produktangebote IXBH24N170 (Transistor) nach Preis ab 85.08 EUR bis 85.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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IXBH24N170 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Kind of package: tube Gate charge: 0.14µC Turn-on time: 190ns Turn-off time: 1285ns Collector current: 24A Pulsed collector current: 230A Gate-emitter voltage: ±20V Power dissipation: 250W Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXBH24N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |