IXBH24N170 IXYS
Hersteller: IXYS
Description: IGBT 1700V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
Description: IGBT 1700V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.53 EUR |
| 30+ | 21.91 EUR |
| 120+ | 20.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXBH24N170 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3, Case: TO247-3, Mounting: THT, Kind of package: tube, Gate charge: 0.14µC, Turn-on time: 190ns, Turn-off time: 1285ns, Power dissipation: 250W, Collector current: 24A, Pulsed collector current: 230A, Gate-emitter voltage: ±20V, Collector-emitter voltage: 1.7kV, Technology: BiMOSFET™, Features of semiconductor devices: high voltage, Type of transistor: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBH24N170 nach Preis ab 23.44 EUR bis 71.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXBH24N170 | Hersteller : IXYS |
 IGBTs BIMOSFETS 1700V 60A |
auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IXBH24N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.14µC Turn-on time: 190ns Turn-off time: 1285ns Power dissipation: 250W Collector current: 24A Pulsed collector current: 230A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
|
|
IXBH24N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.14µC Turn-on time: 190ns Turn-off time: 1285ns Power dissipation: 250W Collector current: 24A Pulsed collector current: 230A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
IXBH24N170(Transistor ) Produktcode: 43528
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > Transistoren IGBT, Leistungsmodule ZCODE: 8541290010 |
Produkt ist nicht verfügbar
|
|||||||||||||
 |
IXBH24N170 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |