IXBH24N170 (Transistor)
Produktcode: 43528
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Zolltarifnummer: 8541 29 00 10
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Weitere Produktangebote IXBH24N170 (Transistor) nach Preis ab 31.58 EUR bis 85.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXBH24N170 | IXYS |
 Description: IGBT 1700V 60A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.06 µs Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-247AD Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 230 A Power - Max: 250 W |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBH24N170 | IXYS |
IGBTs BIMOSFETS 1700V 60A |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBH24N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Kind of package: tube Gate charge: 0.14µC Turn-on time: 190ns Turn-off time: 1285ns Collector current: 24A Pulsed collector current: 230A Gate-emitter voltage: ±20V Power dissipation: 250W Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXBH24N170 |
|
Hersteller: IXYS
Description: IGBT 1700V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
Description: IGBT 1700V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 50.74 EUR |
| 30+ | 32.92 EUR |
| 120+ | 31.58 EUR |
| IXBH24N170 |
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Hersteller: IXYS
IGBTs BIMOSFETS 1700V 60A
IGBTs BIMOSFETS 1700V 60A
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 61.24 EUR |
| 10+ | 43.02 EUR |
| IXBH24N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |