Produktrezensionen
Produktbewertung abgeben
Technische Details IXTX20N150 IXYS
Description: MOSFET N-CH 1500V 20A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Drain to Source Voltage (Vdss): 1500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 1250W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Weitere Produktangebote IXTX20N150
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTX20N150 | Hersteller : IXYS |
 Description: MOSFET N-CH 1500V 20A PLUS247-3Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
Produkt ist nicht verfügbar |